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Terahertz Injection Electroluminescence in Multiperiod Quantum-Cascade AlGaAs/GaAs Structures.
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- JETP Letters, 2001, v. 74, n. 2, p. 100
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- Article
Influence of surface wettability on the cathodic electroluminescence of porous silicon.
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- Technical Physics Letters, 1997, v. 23, n. 1, p. 35, doi. 10.1134/1.1261609
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- Article
On Bifurcations of Periodic Orbits in the van der Pol-Duffing Equation.
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- International Journal of Bifurcation & Chaos in Applied Sciences & Engineering, 1997, v. 7, n. 2, p. 459, doi. 10.1142/S0218127497000339
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- Article
Editorial - Leonid Pavlovich Shilnikov.
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- International Journal of Bifurcation & Chaos in Applied Sciences & Engineering, 2014, v. 24, n. 8, p. -1, doi. 10.1142/S0218127414020015
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- Article
Specific features of amorphous silicon layers grown by plasma-enhanced chemical vapor deposition with tetrafluorosilane.
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- Semiconductors, 2011, v. 45, n. 3, p. 302, doi. 10.1134/S1063782611030225
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- Article
Free-standing luminescent layers of porous silicon.
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- Semiconductors, 2010, v. 44, n. 12, p. 1588, doi. 10.1134/S1063782610120092
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- Article
Optical properties of iron-passivated nanoporous silicon.
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- Semiconductors, 2010, v. 44, n. 5, p. 642, doi. 10.1134/S1063782610050167
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- Article
The crucial role of singlet oxygen in the formation of photoluminescence from nanoporous silicon.
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- Semiconductors, 2009, v. 43, n. 10, p. 1347, doi. 10.1134/S1063782609100169
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- Article
Optical study of platinum-modified amorphous carbon.
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- Semiconductors, 2009, v. 43, n. 7, p. 915, doi. 10.1134/S1063782609070173
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- Article
Catalytic properties of composite amorphous carbon-platinum layers in fuel cells.
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- Semiconductors, 2008, v. 42, n. 10, p. 1249, doi. 10.1134/S1063782608100199
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- Article
Role of singlet oxygen in formation of nanoporous silicon.
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- Semiconductors, 2007, v. 41, n. 12, p. 1453, doi. 10.1134/S1063782607120135
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- Article
Interaction of Fullerene with Single-Crystal Silicon.
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- Semiconductors, 2005, v. 39, n. 8, p. 983, doi. 10.1134/1.2010697
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- Article
Electrolytic Fabrication of Porous Silicon with the Use of Internal Current Source.
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- Semiconductors, 2003, v. 37, n. 4, p. 477, doi. 10.1134/1.1568472
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- Article
Preparation and Study of Carbidized Porous Silicon.
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- Semiconductors, 2002, v. 36, n. 5, p. 574, doi. 10.1134/1.1478551
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- Article
Electroluminescence from AlGaAs/GaAs Quantum-Cascade Structures in the Terahertz Range.
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- Semiconductors, 2002, v. 36, n. 2, p. 226
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- Article
Photoresponse and Electroluminescence of Silicon–<PorousSilicon>–<Chemically Deposited Metal> Structures.
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- Semiconductors, 2000, v. 34, n. 11, p. 1334, doi. 10.1134/1.1325434
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- Article
On the Mechanism of Porous Silicon Formation.
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- Semiconductors, 2000, v. 34, n. 9, p. 1090, doi. 10.1134/1.1309429
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- Article
Donor-acceptor photoluminescence of weakly compensated GaN:Mg.
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- Semiconductors, 1999, v. 33, n. 12, p. 1284, doi. 10.1134/1.1187908
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- Article
Composition and porosity of multicomponent structures: porous silicon as a three-component system
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- Semiconductors, 1998, v. 32, n. 9, p. 1003, doi. 10.1134/1.1187534
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- Article
Mechanism of anodic electroluminescence of porous silicon in electrolytes
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- Semiconductors, 1998, v. 32, n. 5, p. 529, doi. 10.1134/1.1187556
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- Article
Mechanism of electroluminescence of porous silicon in electrolytes.
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- Semiconductors, 1997, v. 31, n. 7, p. 716, doi. 10.1134/1.1187075
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- Article
Study of PbTe photodiodes on a buffer sublayer of porous silicon.
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- Semiconductors, 1997, v. 31, n. 1, p. 76, doi. 10.1134/1.1187087
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- Article
Intuitive Figurative Representation in Decision-making by Map Data.
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- Journal of Multiple-Valued Logic & Soft Computing, 2018, v. 30, n. 2-3, p. 165
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- Article
resonance enhancement of photoluminescence from silicon nanocrystallites.
- Published in:
- Physica Status Solidi (B), 2009, v. 246, n. 2, p. 444, doi. 10.1002/pssb.200844365
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- Article