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Effect of Boron Incorporation on Structural and Optical Properties of AlN Layers Grown by Metal‐Organic Vapor Phase Epitaxy.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 21, p. N.PAG, doi. 10.1002/pssa.201800282
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Effect of Sputter Deposition Atmosphere of AlN on the Electrical Properties of Hydrogen-Terminated Diamond Field Effect Transistor with AlN/Al<sub>2</sub>O<sub>3</sub> Stack Gate.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 11, p. n/a, doi. 10.1002/pssa.201700463
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Nanometer-thin ALD-Al<sub>2</sub>O<sub>3</sub> for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 2, p. n/a, doi. 10.1002/pssa.201600727
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100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam.
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- Nature Photonics, 2010, v. 4, n. 11, p. 767, doi. 10.1038/nphoton.2010.220
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