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Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots.
- Published in:
- Semiconductors, 2018, v. 52, n. 1, p. 59, doi. 10.1134/S1063782618010220
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- Article
Phase modulation of mid-infrared radiation in double-quantum-well structures under a lateral electric field.
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- Semiconductors, 2017, v. 51, n. 3, p. 363, doi. 10.1134/S1063782617030034
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- Article
Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields.
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- Semiconductors, 2016, v. 50, n. 11, p. 1425, doi. 10.1134/S106378261611004X
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- Article
Effect of transverse electric field and temperature on light absorption in GaAs/AlGaAs tunnel-coupled quantum wells.
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- Semiconductors, 2015, v. 49, n. 11, p. 1425, doi. 10.1134/S1063782615110081
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- Article
Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping.
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- Semiconductors, 2015, v. 49, n. 1, p. 28, doi. 10.1134/S106378261501008X
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- Article
IMPURITY-RELATED TERAHERTZ EMISSION FROM QUANTUM WELL NANOSTRUCTURES.
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- Lithuanian Journal of Physics, 2014, v. 54, n. 1, p. 46, doi. 10.3952/lithjphys.54111
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- Article
Lateral photoconductivity in structures with Ge/Si quantum dots.
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- Semiconductors, 2013, v. 47, n. 12, p. 1574, doi. 10.1134/S1063782613120154
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- Article
Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells.
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- Semiconductors, 2013, v. 47, n. 11, p. 1513, doi. 10.1134/S1063782613110237
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- Article