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Approximation to the Derivatives of a Function Defined on a Simplex under Lagrangian Interpolation.
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- Mathematical Notes, 2024, v. 115, n. 1/2, p. 3, doi. 10.1134/S0001434624010012
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Lower bound for the Lebesgue function of an interpolation process with algebraic polynomials on equidistant nodes of a simplex.
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- Mathematical Notes, 2012, v. 92, n. 1/2, p. 16, doi. 10.1134/S0001434612070024
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On the Order of the Lebesgue Constants for Interpolation by Algebraic Polynomials from Values at Uniform Nodes of a Simplex.
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- Mathematical Notes, 2005, v. 77, n. 5/6, p. 751, doi. 10.1007/s11006-005-0076-1
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- Article
Formation and Optical Properties of Locally Strained Ge Microstructures Embedded into Cavities.
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- Semiconductors, 2021, v. 55, n. 6, p. 531, doi. 10.1134/S1063782621050183
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Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals.
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- Semiconductors, 2020, v. 54, n. 10, p. 1352, doi. 10.1134/S1063782620100334
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Influence of the Growth Conditions and Doping Level on the Luminescence Kinetics of Ge:Sb Layers Grown on Silicon.
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- Semiconductors, 2020, v. 54, n. 7, p. 811, doi. 10.1134/S1063782620070131
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Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics.
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- Semiconductors, 2019, v. 53, n. 10, p. 1324, doi. 10.1134/S1063782619100257
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Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates.
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- Semiconductors, 2019, v. 53, n. 10, p. 1318, doi. 10.1134/S1063782619100154
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- Article
Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers.
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- Semiconductors, 2019, v. 53, n. 9, p. 1262, doi. 10.1134/S1063782619090161
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Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium.
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- Semiconductors, 2019, v. 53, n. 7, p. 882, doi. 10.1134/S106378261907025X
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Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics.
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- Semiconductors, 2018, v. 52, n. 11, p. 1442, doi. 10.1134/S1063782618110167
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Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells.
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- Semiconductors, 2017, v. 51, n. 12, p. 1542, doi. 10.1134/S1063782617120028
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Strained multilayer structures with pseudomorphic GeSiSn layers.
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- Semiconductors, 2016, v. 50, n. 12, p. 1584, doi. 10.1134/S106378261612023X
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Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers.
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- Semiconductors, 2016, v. 50, n. 12, p. 1657, doi. 10.1134/S1063782616120046
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Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands.
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- Semiconductors, 2015, v. 49, n. 11, p. 1410, doi. 10.1134/S106378261511024X
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Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer.
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- Semiconductors, 2015, v. 49, n. 8, p. 1104, doi. 10.1134/S1063782615080059
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Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures.
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- Semiconductors, 2013, v. 47, n. 11, p. 1496, doi. 10.1134/S1063782613110249
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Optical monitoring of technological parameters during molecular-beam epitaxy.
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- Semiconductors, 2012, v. 46, n. 12, p. 1471, doi. 10.1134/S1063782612120214
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Optically active centers in Si/Si<sub>1 − x</sub>Ge<sub> x</sub>:Er heterostructures containing Er<sup>3+</sup> ions.
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- Semiconductors, 2009, v. 43, n. 7, p. 877, doi. 10.1134/S1063782609070094
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Photoluminescence excitation spectroscopy technique modified for studying structures with self-assembled Ge(Si)/Si(001) nanoislands.
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- Technical Physics Letters, 2012, v. 38, n. 9, p. 828, doi. 10.1134/S1063785012090179
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- Article
Heat Treatment of Abrasive Tools Based on Ceramic Binder.
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- Russian Engineering Research, 2019, v. 39, n. 11, p. 935, doi. 10.3103/S1068798X19110108
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Improved productivity and product quality when using controlled-grain grinding tools.
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- Russian Engineering Research, 2009, v. 29, n. 5, p. 509, doi. 10.3103/S1068798X09050190
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