Found: 9
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Procedural and obstetric outcomes after embryo reduction vs fetal reduction in multifetal pregnancy.
- Published in:
- 2019
- By:
- Publication type:
- journal article
Two cases of nasopharyngeal branchial cleft cyst treated by powered instrument assisted marsupialisation.
- Published in:
- Journal of Laryngology & Otology, 2013, v. 127, n. 6, p. 614, doi. 10.1017/S0022215113000959
- By:
- Publication type:
- Article
Massive epistaxis due to pseudoaneurysm of the sphenopalatine artery: a rare post-operative complication of orthognathic surgery.
- Published in:
- Journal of Laryngology & Otology, 2013, v. 127, n. 6, p. 610, doi. 10.1017/S0022215113000819
- By:
- Publication type:
- Article
Pressure dressing after excision of preauricular sinus: suture transfixion of silicone sheets.
- Published in:
- Journal of Laryngology & Otology, 2009, v. 123, n. 12, p. 1367, doi. 10.1017/S0022215109991162
- By:
- Publication type:
- Article
X-ray beam test of fabricated photo-diodes for Pohang- Accelerator-Laboratory X-ray free-electron laser.
- Published in:
- Frontiers in Physics, 2024, p. 1, doi. 10.3389/fphy.2023.1328639
- By:
- Publication type:
- Article
Development of a Multi-Resolution Emission Inventory and Its Impact on Sulfur Distribution for Northeast Asia.
- Published in:
- Water, Air & Soil Pollution, 2003, v. 148, n. 1-4, p. 259, doi. 10.1023/A:1025493321901
- By:
- Publication type:
- Article
Expression of hMLH1 is inactivated in the gastric adenomas with enhanced microsatellite instability.
- Published in:
- British Journal of Cancer, 2001, v. 85, n. 8, p. 1147, doi. 10.1054/bjoc.2001.2051
- By:
- Publication type:
- Article
Long-channel In<sub>0.7</sub>Ga<sub>0.3</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As quantum-well MOSFETs on InP substrate with record µ<sub>n_eff</sub> = 6960 cm²/V-s.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 18, p. 1279, doi. 10.1049/el.2017.0773
- By:
- Publication type:
- Article
Long‐channel In<sub>0.7</sub>Ga<sub>0.3</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As quantum‐well MOSFETs on InP substrate with record μ<sub>n_eff</sub> = 6960 cm<sup>2</sup>/V‐s.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 17, p. 1279, doi. 10.1049/el.2017.0773
- By:
- Publication type:
- Article