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Memory window engineering of Ta<sub>2</sub>O<sub>5−x</sub> oxide-based resistive switches via incorporation of various insulating frames.
- Published in:
- Scientific Reports, 2016, p. 30333, doi. 10.1038/srep30333
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- Article
All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics.
- Published in:
- Scientific Reports, 2015, p. 13362, doi. 10.1038/srep13362
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- Article
High‐Performance Amorphous InGaZnO Thin‐Film Transistors via Staked Ultrathin High‐k TaO<sub>x</sub> Buffer Layer Grown on Low‐k SiO<sub>2</sub> Gate Oxide.
- Published in:
- Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600452
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- Article