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Facile ultrasound-assisted and microwave-assisted methods for preparation of BiS-PVA nanostructures: exploring their pertinent structural and optical properties and comparative studies on the electrical, properties of Au/(BiS-PVA)/n-Si Schottky structure.
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- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 23, p. 17948, doi. 10.1007/s10854-017-7737-1
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- Article
Ultrasound-Assisted Method for Preparation of Ag2S Nanostructures: Fabrication of Au/Ag2S-PVA/n-Si Schottky Barrier Diode and Exploring Their Electrical Properties.
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- Journal of Electronic Materials, 2020, v. 49, n. 1, p. 444, doi. 10.1007/s11664-019-07708-3
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- Article
Current-Transport Mechanisms of the Al/(Bi<sub>2</sub>S<sub>3</sub>-PVA Nanocomposite)/p-Si Schottky Diodes in the Temperature Range Between 220 K and 380 K.
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- Journal of Electronic Materials, 2018, v. 47, n. 12, p. 6945, doi. 10.1007/s11664-018-6593-y
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- Article
On the temperature dependent current transport mechanisms and barrier inhomogeneity in Au/SnO-PVA/n-Si Schottky barrier diodes.
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- Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 8, p. 1, doi. 10.1007/s00339-017-1168-y
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- Article