Works by Avrutin, Vitaliy

Results: 21

Graphene-Based Field-Effect Photodetector with HgCdTe Absorber.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 10, p. 5865, doi. 10.1007/s11664-024-11314-3

By:

Sheremet, Volodymyr;
Rabbe, Md Fazle;
Jacobs, Randy N.;
Avrutin, Vitaliy;
Ӧzgür, Ümit;
Dhar, Nibir K.

Publication type:

Article

Recent Development of Boron Nitride towards Electronic Applications.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 5, p. 1, doi. 10.1002/aelm.201600485

By:

Izyumskaya, Natalia;
Demchenko, Denis O.;
Das, Saikat;
Özgür, Ümit;
Avrutin, Vitaliy;
Morkoç, Hadis

Publication type:

Article

Characterization of Ag Schottky Barriers on Be0.02Mg0.26ZnO/ZnO Heterostructures.

Published in:

Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 2, p. 1, doi. 10.1002/pssr.201700366

By:

Ullah, Md Barkat;
Ding, Kai;
Nakagawara, Tanner;
Avrutin, Vitaliy;
Özgür, Ümit;
Morkoç, Hadis

Publication type:

Article

Polarity control and residual strain in ZnO epilayers grown by molecular beam epitaxy on (0001) GaN/sapphire.

Published in:

Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 9, p. 682, doi. 10.1002/pssr.201600189

By:

Ullah, Md. Barkat;
Avrutin, Vitaliy;
Li, Si Qian;
Das, Saikat;
Monavarian, Morteza;
Toporkov, Mykyta;
Özgür, Ümit;
Ruterana, Pierre;
Morkoç, Hadis

Publication type:

Article

Cover Picture: Polarity control and residual strain in ZnO epilayers grown by molecular beam epitaxy on (0001) GaN/sapphire (Phys. Status Solidi RRL 9/2016).

Published in:

Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 9, p. n/a, doi. 10.1002/pssr.201670753

By:

Ullah, Md. Barkat;
Avrutin, Vitaliy;
Li, Si Qian;
Das, Saikat;
Monavarian, Morteza;
Toporkov, Mykyta;
Özgür, Ümit;
Ruterana, Pierre;
Morkoç, Hadis

Publication type:

Article

The effect of barrier strain on the reliability of In x Al1- xN/AlN/GaN heterostructure field-effect transistors.

Published in:

Physica Status Solidi - Rapid Research Letters, 2012, v. 6, n. 4, p. 163, doi. 10.1002/pssr.201206024

By:

Kayis, Cemil;
Ferreyra, Romualdo A.;
Zhu, Congyong;
Avrutin, Vitaliy;
Özgür, Ümit;
Morkoç, Hadis

Publication type:

Article

Phase Stabilized MOCVD Growth of β‐Ga2O3 Using SiOx on c‐Plane Sapphire and AlN/Sapphire Template.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 11, p. 1, doi. 10.1002/pssa.202300036

By:

Jewel, Mohi Uddin;
Hasan, Samiul;
Crittenden, Scott R.;
Avrutin, Vitaliy;
Özgür, Ümit;
Morkoç, Hadis;
Ahmad, Iftikhar

Publication type:

Article

Real-time monitoring of cellular oxidative stress during aerosol sampling: a proof of concept study.

Published in:

Drug & Chemical Toxicology, 2022, v. 45, n. 2, p. 767, doi. 10.1080/01480545.2020.1774774

By:

Secondo, Lynn E.;
Avrutin, Vitaliy;
Ozgur, Umit;
Topsakal, Erdem;
Lewinski, Nastassja A.

Publication type:

Article

Amorphous and micromorph Si solar cells: current status and outlook.

Published in:

Turkish Journal of Physics, 2014, v. 38, n. 3, p. 526, doi. 10.3906/fiz-1406-14

By:

AVRUTIN, Vitaliy;
IZYUMSKAYA, Natalia;
MORKOÇ, Hadis

Publication type:

Article

Two-dimensional MoS2 as a new material for electronic devices.

Published in:

Turkish Journal of Physics, 2014, v. 38, n. 3, p. 478, doi. 10.3906/fiz-1407-16

By:

IZYUMSKAYA, Natalia;
DEMCHENKO, Denis O.;
AVRUTIN, Vitaliy;
ÖZGÜR, Ümit;
MORKOÇ., Hadis

Publication type:

Article

Saga of efficiency degradation at high injection in InGaN light emitting diodes.

Published in:

Turkish Journal of Physics, 2014, v. 38, n. 3, p. 269, doi. 10.3906/fiz-1407-23

By:

AVRUTIN, Vitaliy;
HAFIZ, Shopan A.;
Fan ZHANG;
ÖZGÜR, Ümit;
BELLOTTI, Enrico;
BERTAZZI, Francesco;
GOANO, Michele;
MATULIONIS, Arvydas;
ROBERTS, Adam T.;
EVERITT, Henry O.;
MORKOÇ, Hadis

Publication type:

Article

Hot-Electron Microwave Noise and Energy Relaxation in (Be)MgZnO/ZnO Heterostructures.

Published in:

Crystals (2073-4352), 2024, v. 14, n. 1, p. 75, doi. 10.3390/cryst14010075

By:

Šermukšnis, Emilis;
Šimukovič, Artūr;
Avrutin, Vitaliy;
Izyumskaya, Natalia;
Özgür, Ümit;
Morkoç, Hadis

Publication type:

Article

MOCVD-grown β-Ga 2 O 3 as a Gate Dielectric on AlGaN/GaN-Based Heterojunction Field Effect Transistor.

Published in:

Crystals (2073-4352), 2023, v. 13, n. 2, p. 231, doi. 10.3390/cryst13020231

By:

Hasan, Samiul;
Jewel, Mohi Uddin;
Crittenden, Scott R.;
Lee, Dongkyu;
Avrutin, Vitaliy;
Özgür, Ümit;
Morkoç, Hadis;
Ahmad, Iftikhar

Publication type:

Article

Thickness Variations and Absence of Lateral Compositional Fluctuations in Aberration-Corrected STEM Images of InGaN LED Active Regions at Low Dose.

Published in:

Microscopy & Microanalysis, 2014, v. 20, n. 3, p. 864, doi. 10.1017/S1431927614000427

By:

Yankovich, Andrew B.;
Kvit, Alexander V.;
Li, Xing;
Zhang, Fan;
Avrutin, Vitaliy;
Liu, Huiyong;
Izyumskaya, Natalia;
Özgür, Ümit;
Van Leer, Brandon;
Morkoç, Hadis;
Voyles, Paul M.

Publication type:

Article

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes.

Published in:

Crystals (2073-4352), 2017, v. 7, n. 10, p. 300, doi. 10.3390/cryst7100300

By:

Kai Ding;
Avrutin, Vitaliy;
Özgür, Ümit;
Morkoç, Hadis

Publication type:

Article

Energy-Efficient, On-Demand Activation of Biosensor Arrays for Long-Term Continuous Health Monitoring.

Published in:

Biosensors (2079-6374), 2022, v. 12, n. 5, p. 358, doi. 10.3390/bios12050358

By:

Lundquist, Jonathan;
Horstmann, Benjamin;
Pestov, Dmitry;
Ozgur, Umit;
Avrutin, Vitaliy;
Topsakal, Erdem

Publication type:

Article

Micro-LEDs, a Manufacturability Perspective.

Published in:

Applied Sciences (2076-3417), 2019, v. 9, n. 6, p. 1206, doi. 10.3390/app9061206

By:

Ding, Kai;
Avrutin, Vitaliy;
Izyumskaya, Natalia;
Özgür, Ümit;
Morkoç, Hadis

Publication type:

Article

An alternative material for transparent antennas for commercial and medical applications.

Published in:

Microwave & Optical Technology Letters, 2017, v. 59, n. 4, p. 773, doi. 10.1002/mop.30404

By:

Green, Ryan B.;
Toporkov, Mykyta;
Ullah, M.D.B.;
Avrutin, Vitaliy;
Ozgur, Umit;
Morkoc, Hadis;
Topsakal, Erdem

Publication type:

Article

High‐Quality Plasmonic Materials TiN and ZnO:Al by Atomic Layer Deposition.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 10, p. 1, doi. 10.1002/pssr.202100227

By:

Izyumskaya, Natalia;
Fomra, Dhruv;
Ding, Kai;
Morkoç, Hadis;
Kinsey, Nathaniel;
Özgür, Ümit;
Avrutin, Vitaliy

Publication type:

Article

High‐Performance BeMgZnO/ZnO Heterostructure Field‐Effect Transistors.

Published in:

Physica Status Solidi - Rapid Research Letters, 2020, v. 14, n. 12, p. 1, doi. 10.1002/pssr.202000371

By:

Ding, Kai;
Avrutin, Vitaliy;
Izyumskaya, Natalia;
Özgür, Ümit;
Morkoç, Hadis;
Šermukšnis, Emilis;
Matulionis, Arvydas

Publication type:

Article

Influence of ZnO thin film crystallinity on in vitro biocompatibility.

Published in:

Toxicology Research, 2018, v. 7, n. 5, p. 754, doi. 10.1039/c8tx00061a

By:

Lewinski, Nastassja A.;
Avrutin, Vitaliy;
Izadi, Tanin;
Secondo, Lynn E.;
Ullah, Md. Barkat;
Özgür, Ümit;
Morkoç, Hadis;
Topsakal, Erdem

Publication type:

Article

Works by Avrutin, Vitaliy

Graphene-Based Field-Effect Photodetector with HgCdTe Absorber.

Recent Development of Boron Nitride towards Electronic Applications.

Characterization of Ag Schottky Barriers on Be<sub>0.02</sub>Mg<sub>0.26</sub>ZnO/ZnO Heterostructures.

Polarity control and residual strain in ZnO epilayers grown by molecular beam epitaxy on (0001) GaN/sapphire.

Cover Picture: Polarity control and residual strain in ZnO epilayers grown by molecular beam epitaxy on (0001) GaN/sapphire (Phys. Status Solidi RRL 9/2016).

The effect of barrier strain on the reliability of In <sub>x</sub> Al<sub>1- x</sub>N/AlN/GaN heterostructure field-effect transistors.

Phase Stabilized MOCVD Growth of β‐Ga<sub>2</sub>O<sub>3</sub> Using SiO<sub>x</sub> on c‐Plane Sapphire and AlN/Sapphire Template.

Real-time monitoring of cellular oxidative stress during aerosol sampling: a proof of concept study.

Amorphous and micromorph Si solar cells: current status and outlook.

Two-dimensional MoS<sub>2</sub> as a new material for electronic devices.

Saga of efficiency degradation at high injection in InGaN light emitting diodes.

Hot-Electron Microwave Noise and Energy Relaxation in (Be)MgZnO/ZnO Heterostructures.

MOCVD-grown β-Ga 2 O 3 as a Gate Dielectric on AlGaN/GaN-Based Heterojunction Field Effect Transistor.

Thickness Variations and Absence of Lateral Compositional Fluctuations in Aberration-Corrected STEM Images of InGaN LED Active Regions at Low Dose.

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes.

Energy-Efficient, On-Demand Activation of Biosensor Arrays for Long-Term Continuous Health Monitoring.

Micro-LEDs, a Manufacturability Perspective.

An alternative material for transparent antennas for commercial and medical applications.

High‐Quality Plasmonic Materials TiN and ZnO:Al by Atomic Layer Deposition.

High‐Performance BeMgZnO/ZnO Heterostructure Field‐Effect Transistors.

Influence of ZnO thin film crystallinity on in vitro biocompatibility.