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Influence of the Crystallographic Anisotropy on the Stabilization Energy and Contribution from the Jahn–Teller Subsystem to the Elastic Moduli of Doped Crystals.
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- JETP Letters, 2024, v. 119, n. 1, p. 53, doi. 10.1134/S0021364023603688
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- Article
Anomalous Behavior of the Tunneling Magnetoresistance in (CoFeB)<sub>x</sub>(LiNbO<sub>3</sub>)<sub>100 −</sub><sub>x</sub>/Si Nanocomposite Film Structures Below the Percolation Threshold: Manifestations of the Cotunneling and Exchange Effects.
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- JETP Letters, 2023, v. 118, n. 1, p. 58, doi. 10.1134/S0021364023601550
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- Article
Gallium Vacancy—Shallows Donor Complexes in n-GaAs Doped with Elements of Group VI Te or S (Review).
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- Semiconductors, 2023, v. 57, n. 6, p. 275, doi. 10.1134/S1063782623080055
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- Article
Magnetoelasticity of a Jahn–Teller Subsystem in Chromium-Doped II–VI Crystals.
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- Journal of Experimental & Theoretical Physics, 2023, v. 136, n. 1, p. 80, doi. 10.1134/S1063776123010107
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- Article
Adiabatic Potential Energy Surface of Jahn–Teller Cu<sup>2+</sup> Complexes in a Fluorite Crystal.
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- Journal of Experimental & Theoretical Physics, 2022, v. 135, n. 4, p. 473, doi. 10.1134/S106377612210017X
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- Article
Spin-Fluctuation Transition in the Disordered Ising Model.
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- JETP Letters, 2021, v. 114, n. 6, p. 347, doi. 10.1134/S0021364021180077
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- Article
Relaxation Contribution of a System of Jahn–Teller Complexes to the Elastic Moduli of Doped Fluorites.
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- Journal of Experimental & Theoretical Physics, 2021, v. 132, n. 5, p. 790, doi. 10.1134/S106377612105006X
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- Article
Tunneling Relaxation Mechanisms of the Jahn–Teller Complexes in a CaF2:Cr2+ Crystal.
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- JETP Letters, 2021, v. 113, n. 1, p. 47, doi. 10.1134/S0021364021010082
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- Article
Cascaded Second Harmonic Generation with a Half-Order Periodical Orientation.
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- Optics & Spectroscopy, 2020, v. 128, n. 11, p. 1851, doi. 10.1134/S0030400X2011017X
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- Article
Sub-lattice of Jahn-Teller centers in hexaferrite crystal.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-63915-7
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- Article
On the Theory of Plasmon–Excitons: An Estimate of the Coupling Constant and the Optical Spectrum.
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- Semiconductors, 2019, v. 53, n. 8, p. 1042, doi. 10.1134/S1063782619080050
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- Article
Ultrasonic Determination of the Jahn–Teller Effect Parameters in Impurity-Containing Crystals.
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- Journal of Experimental & Theoretical Physics, 2019, v. 129, n. 1, p. 72, doi. 10.1134/S1063776119060104
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- Article
Topological and Chiral Spin Hall Effects.
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- Physica Status Solidi (B), 2019, v. 256, n. 6, p. N.PAG, doi. 10.1002/pssb.201900033
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- Article
A Material for Difference-Frequency Generation of Terahertz Radiation.
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- Optics & Spectroscopy, 2018, v. 125, n. 4, p. 582, doi. 10.1134/S0030400X1810020X
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- Article
Galvanomagnetic effects in tellurium whiskers.
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- Physica Status Solidi (B), 2016, v. 253, n. 2, p. 255, doi. 10.1002/pssb.201552373
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- Article
Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure.
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- Scientific Reports, 2015, p. 17158, doi. 10.1038/srep17158
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- Article
Photoelastic Phenomena in Stressed Laser Heterostructures.
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- Acta Physica Polonica: A, 2015, v. 127, n. 1, p. 87, doi. 10.12693/APhysPolA.127.87
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- Article
Ultrasonic exploration of vacancy centres with the Jahn-Teller effect. Application to the ZnSe crystal.
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- Physica Status Solidi (B), 2014, v. 251, n. 8, p. 1590, doi. 10.1002/pssb.201451092
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- Article
Resonant enhancement of indirect exchange interaction in semiconductor heterostructures.
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- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 5, p. 1048, doi. 10.1002/pssa.201300676
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- Article
Optical orientation of electrons in compensated semiconductors.
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- Semiconductors, 2013, v. 47, n. 9, p. 1232, doi. 10.1134/S106378261309011X
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- Article
Quantum corrections to resistance of microblock tellurium at ultralow temperatures under phonon freezing conditions.
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- Journal of Experimental & Theoretical Physics, 2010, v. 111, n. 2, p. 276, doi. 10.1134/S1063776110080200
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- Article
Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers.
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- Semiconductors, 2010, v. 44, n. 6, p. 805, doi. 10.1134/S1063782610060199
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- Article
Dissipation loss of mid-infrared radiation in a dielectric waveguide.
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- Semiconductors, 2010, v. 44, n. 2, p. 243, doi. 10.1134/S1063782610020193
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- Article
Features of the recombination processes in InGaN/GaN based LEDs at high densities of injection current.
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- Technical Physics Letters, 2009, v. 35, n. 10, p. 922, doi. 10.1134/S1063785009100149
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- Article
Behavior of the phonon replicas of the acceptor-bound exciton’s recombination line in GaAs/AlGaAs quantum wells.
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- Semiconductors, 2009, v. 43, n. 9, p. 1174, doi. 10.1134/S1063782609090139
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- Article
Dielectric waveguide for middle and far infrared radiation.
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- Semiconductors, 2009, v. 43, n. 8, p. 1036, doi. 10.1134/S1063782609080132
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- Article
Continuous-wave disk WGM lasers (λ = 3.0 μm) based on InAs/InAsSbP heterostructures.
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- Semiconductors, 2009, v. 43, n. 1, p. 117, doi. 10.1134/S1063782609010230
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- Article
Specific features of optical orientation and relaxation of electron spins in quantum wells with a large spin splitting.
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- Semiconductors, 2008, v. 42, n. 8, p. 958, doi. 10.1134/S1063782608080149
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- Article
Optical orientation of holes in strained nanostructures.
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- Semiconductors, 2008, v. 42, n. 3, p. 310, doi. 10.1134/S1063782608030123
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- Article
Polarization-resolved photoluminescence piezospectroscopy of GaAs/Al<sub>0.35</sub>Ga<sub>0.65</sub>As:Be quantum wells.
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- Semiconductors, 2008, v. 42, n. 3, p. 316, doi. 10.1134/S1063782608030135
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- Article
SPATIAL STRUCTURE OF AN INDIVIDUAL DEEP ACCEPTOR IN A CUBIC CRYSTAL.
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- International Journal of Nanoscience, 2007, v. 6, n. 5, p. 379, doi. 10.1142/S0219581X0700478X
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- Article
Warping a single Mn acceptor wavefunction by straining the GaAs host.
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- Nature Materials, 2007, v. 6, n. 7, p. 512, doi. 10.1038/nmat1936
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- Article
Nonlinear-optical effects in semiconductor lasers based on InGaAs/GaAs/AlGaAs quantum-confinement heterostructures.
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- Semiconductors, 2007, v. 41, n. 3, p. 361, doi. 10.1134/S1063782607030220
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- Article
Circularly polarized photoluminescence related to A(+) centers in GaAs/AlGaAs quantum wells.
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- Semiconductors, 2006, v. 40, n. 9, p. 1071, doi. 10.1134/S1063782606090156
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- Article
Circular Polarization of Luminescence Caused by the Current in Quantum Wells.
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- Semiconductors, 2005, v. 39, n. 11, p. 1323, doi. 10.1134/1.2128459
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- Article
Anomalous Magnetoresistance of Two-Dimensional Systems in the Presence of Spin-Orbit Scattering.
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- Journal of Experimental & Theoretical Physics, 2005, v. 101, n. 4, p. 699, doi. 10.1134/1.2131939
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- Article
Semiconductor WGM Lasers for the Mid-IR Spectral Range.
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- Semiconductors, 2005, v. 39, n. 9, p. 1087, doi. 10.1134/1.2042604
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- Article
Reversible Photoinduced Changes in the Spectrum of Localized States in AsSe Films.
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- Semiconductors, 2005, v. 39, n. 8, p. 963, doi. 10.1134/1.2010694
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- Article
Energy Structure of A[sup +] Centers in Quantum Wells.
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- Semiconductors, 2004, v. 38, n. 2, p. 217, doi. 10.1134/1.1648380
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- Article
On the Experimental Data Processing of Magnetoresistance Oscillations in Two-Dimensional Electron Gas.
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- Semiconductors, 2003, v. 37, n. 2, p. 160, doi. 10.1134/1.1548657
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- Article
Interference of Spin Splittings in Magneto-Oscillation Phenomena in Two-Dimensional Systems.
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- JETP Letters, 2002, v. 75, n. 11, p. 552, doi. 10.1134/1.1500719
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- Article
Effective Exciton Mass in III–V Semiconductors.
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- Semiconductors, 2002, v. 36, n. 3, p. 270, doi. 10.1134/1.1461401
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- Article
Carrier Transport in Porous Silicon.
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- Semiconductors, 2002, v. 36, n. 3, p. 336, doi. 10.1134/1.1461413
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- Article
Spin Relaxation in Asymmetrical Heterostructures.
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- Semiconductors, 2002, v. 36, n. 1, p. 91, doi. 10.1134/1.1434520
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- Article
Drift Mobility of Carriers in Porous Silicon.
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- Semiconductors, 2001, v. 35, n. 5, p. 588, doi. 10.1134/1.1371627
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- Article
Photoluminescence of Cu[sub Ga]Te[sub As] and Cu[sub Ga]Sn[sub Ga] Complexes in n-GaAs under Resonance Polarized Excitation.
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- Semiconductors, 2001, v. 35, n. 2, p. 170, doi. 10.1134/1.1349925
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- Article
Optical and Electrical Properties of Porous Gallium Arsenide.
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- Semiconductors, 2000, v. 34, n. 6, p. 732, doi. 10.1134/1.1188063
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- Article
Quasi-Two-Dimensional Shubnikov–de Haas Effect.
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- Journal of Experimental & Theoretical Physics, 2000, v. 90, n. 2, p. 360, doi. 10.1134/1.559111
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- Article
Change in the energy of Jahn–Teller configurations of vacancy–donor complexes induced by uniaxial strain.
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- Semiconductors, 1999, v. 33, n. 11, p. 1196, doi. 10.1134/1.1187848
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- Article
Polarization anisotropy in optical reflection spectra of structures with open nanowires.
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- Semiconductors, 1999, v. 33, n. 9, p. 985, doi. 10.1134/1.1187819
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- Article