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Study of the Effects of Size Quantization in Coupled Al[sub x]Ga[sub 1 – ][sub x]As/GaAs/Al[sub x]Ga[sub 1 – ][sub x]As Quantum Wells by Means of Photoreflectance Spectroscopy.
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- Optics & Spectroscopy, 2002, v. 93, n. 6, p. 857, doi. 10.1134/1.1531708
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- Article
Study of the Parameters of a Two-Dimensional Electron Gas in InGaN/GaN Quantum Wells by Terahertz Plasmon Resonance.
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- Semiconductors, 2022, v. 56, n. 2, p. 50, doi. 10.1134/S1063782622010055
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- Article
Investigation into the Internal Electric-Field Strength in the Active Region of InGaN/GaN-Based LED Structures with Various Numbers of Quantum Wells by Electrotransmission Spectroscopy.
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- Semiconductors, 2020, v. 54, n. 4, p. 495, doi. 10.1134/S1063782620040028
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- Article
Photoreversible Current in InGaN/GaN-Based LED Heterostructures with Different Numbers of QWs.
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- Semiconductors, 2020, v. 54, n. 3, p. 362, doi. 10.1134/S1063782620030021
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- Article
Investigation into the Distribution of Built-in Electric Fields in LED Heterostructures with Multiple GaN/InGaN Quantum Wells by Electroreflectance Spectroscopy.
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- Semiconductors, 2019, v. 53, n. 4, p. 477, doi. 10.1134/S106378261904002X
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- Article
Photoreflectance Spectroscopy Study of LT-GaAs Layers Grown on Si and GaAs Substrates.
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- Semiconductors, 2018, v. 52, n. 7, p. 849, doi. 10.1134/S1063782618070023
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- Article
Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths.
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- Semiconductors, 2013, v. 47, n. 9, p. 1203, doi. 10.1134/S106378261309008X
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Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures.
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- Semiconductors, 2010, v. 44, n. 8, p. 1090, doi. 10.1134/S1063782610080245
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Electroreflectance spectra of InGaN/AlGaN/GaN quantum-well heterostructures.
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- Semiconductors, 2007, v. 41, n. 9, p. 1060, doi. 10.1134/S1063782607090102
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- Article
Photoreflection Studies of the Dopant Activation in InP Implanted with Be<sup>+</sup> Ions.
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- Semiconductors, 2005, v. 39, n. 2, p. 174, doi. 10.1134/1.1864193
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- Article
Photoreflection Studies of Band Offsets at the Heterojunction in Strained Short-Period GaAs/GaAsP Superlattices.
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- Semiconductors, 2004, v. 38, n. 12, p. 1384, doi. 10.1134/1.1836057
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- Article
Computerized Setup for Double-Monochromator Photoreflectance Spectroscopy.
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- Technical Physics, 2005, v. 50, n. 10, p. 1316, doi. 10.1134/1.2103278
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- Article
Terahertz Time-Domain Spectroscopy (THz-TDS) of LED Heterostructures with Three and Five In<sub>x</sub>Ga<sub>1 –</sub><sub>x</sub>N/GaN Quantum Wells.
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- Journal of Experimental & Theoretical Physics, 2023, v. 136, n. 5, p. 593, doi. 10.1134/S1063776123050072
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- Article
Study of a Nonequilibrium Auger-Transition Using Emission Auger Spectroscopy.
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- Journal of Applied Spectroscopy, 2021, v. 88, n. 5, p. 911, doi. 10.1007/s10812-021-01258-5
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- Article
Piezoelectric Relaxation of Two-Dimensional Electron Gas in Heterostructures with InGaN/GaN Quantum Wells.
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- Russian Physics Journal, 2021, v. 64, n. 5, p. 770, doi. 10.1007/s11182-021-02391-6
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- Article