Found: 18
Select item for more details and to access through your institution.
Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the dark field method.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 107, doi. 10.1007/s10854-007-9556-2
- By:
- Publication type:
- Article
Characterisation of cubic SiC layers VPE grown on Si substrates of different conductivity.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 303, doi. 10.1007/s10854-008-9684-3
- By:
- Publication type:
- Article
Nanoindentation studies of gallium arsenide heteroepitaxial layers.
- Published in:
- Crystal Research & Technology, 2014, v. 49, n. 8, p. 575, doi. 10.1002/crat.201300405
- By:
- Publication type:
- Article
Epitaxial germanium deposited by MOVPE on InGaAs quantum dot stressors grown by MBE.
- Published in:
- Crystal Research & Technology, 2014, v. 49, n. 8, p. 570, doi. 10.1002/crat.201300403
- By:
- Publication type:
- Article
Epitaxial growth and electrical characterization of germanium.
- Published in:
- Crystal Research & Technology, 2011, v. 46, n. 8, p. 813, doi. 10.1002/crat.201000618
- By:
- Publication type:
- Article
A new semimagnetic compound: Cd<sub>1-x</sub>Fe<sub>x</sub>In<sub>2</sub>S<sub>4</sub> single crystal grown by CVT.
- Published in:
- Crystal Research & Technology, 2011, v. 46, n. 8, p. 761, doi. 10.1002/crat.201000627
- By:
- Publication type:
- Article
Temperature quenching of photoluminescence of ordered GaInP.
- Published in:
- Crystal Research & Technology, 2011, v. 46, n. 2, p. 127, doi. 10.1002/crat.201000523
- By:
- Publication type:
- Article
CBr4as precursor for VPE growth of cubic silicon carbide.
- Published in:
- Crystal Research & Technology, 2010, v. 45, n. 6, p. 583, doi. 10.1002/crat.200900590
- By:
- Publication type:
- Article
Designing a large scale CVD reactor for GaAs growth on Ge substrates by multi-hierachy modeling.
- Published in:
- Crystal Research & Technology, 2005, v. 40, n. 10/11, p. 987
- By:
- Publication type:
- Article
Thermodynamical analysis of abrupt interfaces of InGaP/GaAs and GaAs/InGaP heterostructures.
- Published in:
- Crystal Research & Technology, 2005, v. 40, n. 10/11, p. 982
- By:
- Publication type:
- Article
Thermodynamic Analysis of Urea Physical Vapour Transport.
- Published in:
- Crystal Research & Technology, 1995, v. 30, n. 5, p. 667, doi. 10.1002/crat.2170300513
- By:
- Publication type:
- Article
Effects of Group III Cation Substitution in the Raman Spectra of Some Defective Chalcopyrites.
- Published in:
- Crystal Research & Technology, 1992, v. 27, n. 5, p. 685, doi. 10.1002/crat.2170270519
- By:
- Publication type:
- Article
Electro-optical properties of InGaAs layers grown by hydride vapour phase epitaxy.
- Published in:
- Crystal Research & Technology, 1990, v. 25, n. 1, p. 25, doi. 10.1002/crat.2170250107
- By:
- Publication type:
- Article
Interface Kinetical Limitations in Closed-tube Chemical Vapour Transport (II). The CdTe:NH.
- Published in:
- Crystal Research & Technology, 1986, v. 21, n. 10, p. 1265, doi. 10.1002/crat.2170211005
- By:
- Publication type:
- Article
Effect on Ordering of the Growth of GaInP Layers on (111)-GaAs Faces.
- Published in:
- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 671, doi. 10.1007/s11664-010-1178-4
- By:
- Publication type:
- Article
Optical, Structural and Interface Characterization of Single SiO2-SiC Core-Shell Nanowires Grown with a Low-Cost Method.
- Published in:
- 2010
- By:
- Publication type:
- Abstract
Synthesis and Characterization of the Layered Compounds in the ZnIn<sub>2</sub>S<sub>4</sub>-ZnIn<sub>2</sub>Se<sub>4</sub> System.
- Published in:
- Physica Status Solidi (B), 1992, v. 173, n. 2, p. 525, doi. 10.1002/pssb.2221730204
- By:
- Publication type:
- Article
Porphyrin conjugated SiC/SiO<sub>x</sub> nanowires for X-ray-excited photodynamic therapy.
- Published in:
- Scientific Reports, 2015, p. 7606, doi. 10.1038/srep07606
- By:
- Publication type:
- Article