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Analysis of Stability of Generation in Quantum Well Lasers.
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- Semiconductors, 2024, v. 58, n. 5, p. 464, doi. 10.1134/S1063782624050154
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- Article
Blocking-Layer Design for the Suppression of Parasitic Recombination in High-Power Laser Diodes with a GaAs Waveguide.
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- Semiconductors, 2022, v. 56, n. 4, p. 246, doi. 10.1134/S1063782622040029
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- Article
Operating Characteristics of Semiconductor Quantum Well Lasers as Functions of the Waveguide Region Thickness.
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- Semiconductors, 2022, v. 56, n. 2, p. 115, doi. 10.1134/S106378262201016X
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- Article
Parasitic Recombination in a Laser with Asymmetric Barrier Layers.
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- Semiconductors, 2020, v. 54, n. 3, p. 366, doi. 10.1134/S1063782620030203
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- Article
A Search for Asymmetric Barrier Layers for 1550 nm Al-Free Diode Lasers.
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- Semiconductors, 2018, v. 52, n. 14, p. 1905, doi. 10.1134/S1063782618140336
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- Article
Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers.
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- Semiconductors, 2018, v. 52, n. 12, p. 1621, doi. 10.1134/S1063782618120059
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- Article
Effect of Nonradiative Recombination Centers on Photoluminescence Efficiency in Quantum Dot Structures.
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- Semiconductors, 2004, v. 38, n. 10, p. 1207, doi. 10.1134/1.1808830
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- Article
Erratum: “Carrier Photoexcitation from Levels in Quantum Dots to States of the Continuum in Lasing” [Semiconductors35 (3), 343 (2001)].
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- 2001
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- Correction Notice
Carrier Photoexcitation from Levels in Quantum Dots to States of the Continuum in Lasing.
- Published in:
- Semiconductors, 2001, v. 35, n. 3, p. 343, doi. 10.1134/1.1356159
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- Article
Role of thermal ejection of carriers in the burning of spatial holes in quantum dot lasers.
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- Semiconductors, 1999, v. 33, n. 9, p. 981, doi. 10.1134/1.1187818
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- Article
Evolution of light-current characteristic shape in high-power semiconductor quantum well lasers.
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- Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 9, p. 550, doi. 10.1049/el.2019.0225
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- Article
Suppression of sublinearity of light-current curve in 850 nm quantum well laser with asymmetric barrier layers.
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- Electronics Letters (Wiley-Blackwell), 2015, p. 1106, doi. 10.1049/el.2015.1392
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- Publication type:
- Article
Suppression of sublinearity of light–current curve in 850 nm quantum well laser with asymmetric barrier layers.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 14, p. 1106, doi. 10.1049/el.2015.1392
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- Publication type:
- Article
Method for determination of capture velocity of charge carriers into quantum well in semiconductor laser.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 10, p. 780, doi. 10.1049/el.2015.0605
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- Article