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On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon.
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- Semiconductors, 2022, v. 56, n. 4, p. 253, doi. 10.1134/S1063782622040030
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Properties of Compliant Substrates Based on Porous Silicon Formed by Two-stage Etching.
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- Semiconductors, 2022, v. 56, n. 4, p. 259, doi. 10.1134/S1063782622040042
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Spectroscopic Studies of Integrated GaAs/Si Heterostructures.
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- Semiconductors, 2021, v. 55, n. 1, p. 44, doi. 10.1134/S1063782621010139
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Structural and Spectroscopic Studies of Epitaxial GaAs Layers Grown on Compliant Substrates Based on a Superstructure Layer and Protoporous Silicon.
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- Semiconductors, 2021, v. 55, n. 1, p. 122, doi. 10.1134/S1063782621010140
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Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates.
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- Semiconductors, 2020, v. 54, n. 5, p. 596, doi. 10.1134/S1063782620050115
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On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates.
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- Semiconductors, 2019, v. 53, n. 11, p. 1550, doi. 10.1134/S1063782619110174
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Investigation of the Current–Voltage Characteristics of New MnO<sub>2</sub>/GaAs(100) and V<sub>2</sub>O<sub>5</sub>/GaAs(100) Heterostructures Subjected to Heat Treatment.
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- Semiconductors, 2019, v. 53, n. 8, p. 1054, doi. 10.1134/S1063782619080177
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Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate.
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- Semiconductors, 2019, v. 53, n. 8, p. 1120, doi. 10.1134/S1063782619080165
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Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of A<sup>III</sup>N/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy.
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- Semiconductors, 2019, v. 53, n. 7, p. 993, doi. 10.1134/S1063782619070224
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Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial In<sub>x</sub>Ga<sub>1 –</sub><sub>x</sub>N/Si(111) Heterostructures with a Nanocolumnar Film Morphology.
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- Semiconductors, 2019, v. 53, n. 1, p. 65, doi. 10.1134/S1063782619010172
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Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial In<sub>x</sub>Ga<sub>1 - x</sub>N/Si(111) Heterostructures.
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- Semiconductors, 2018, v. 52, n. 13, p. 1653, doi. 10.1134/S106378261813016X
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Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide.
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- Semiconductors, 2018, v. 52, n. 9, p. 1163, doi. 10.1134/S1063782618090154
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Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy.
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- Semiconductors, 2018, v. 52, n. 8, p. 1012, doi. 10.1134/S1063782618080195
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Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100).
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- Semiconductors, 2018, v. 52, n. 1, p. 112, doi. 10.1134/S1063782618010207
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Experimental studies of the effects of atomic ordering in epitaxial GaInP alloys on their optical properties.
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- Semiconductors, 2017, v. 51, n. 9, p. 1111, doi. 10.1134/S1063782617090196
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Experimental studies of the effects of atomic ordering in epitaxial GaInP alloys on their structural and morphological properties.
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- Semiconductors, 2017, v. 51, n. 8, p. 1087, doi. 10.1134/S1063782617080280
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Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates.
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- Semiconductors, 2016, v. 50, n. 9, p. 1261, doi. 10.1134/S1063782616090219
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Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium.
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- Semiconductors, 2016, v. 50, n. 7, p. 853, doi. 10.1134/S106378261607023X
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Properties of AlN films deposited by reactive ion-plasma sputtering.
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- Semiconductors, 2015, v. 49, n. 10, p. 1383, doi. 10.1134/S1063782615100036
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AlGaAs/GaAs(100) hetermostructures with anomalously high carrier mobility.
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- Semiconductors, 2015, v. 49, n. 8, p. 1019, doi. 10.1134/S1063782615080187
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Investigations of nanodimensional AlO films deposited by ion-plasma sputtering onto porous silicon.
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- Semiconductors, 2015, v. 49, n. 7, p. 915, doi. 10.1134/S1063782615070210
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Structural and optical properties of heavily doped AlGaAsP:Mg alloys produced by metal-organic chemical vapor deposition.
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- Semiconductors, 2014, v. 48, n. 8, p. 1094, doi. 10.1134/S1063782614080211
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Structure and optical properties of heterostructures based on MOCVD (AlGaAsP)Si alloys.
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- Semiconductors, 2014, v. 48, n. 1, p. 21, doi. 10.1134/S1063782614010217
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Superstructured ordering in AlGaAs and GaInP alloys.
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- Semiconductors, 2013, v. 47, n. 1, p. 1, doi. 10.1134/S106378261301020X
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Properties of epitaxial (AlGaAs)C alloys grown by MOCVD autoepitaxy.
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- Semiconductors, 2013, v. 47, n. 1, p. 7, doi. 10.1134/S1063782613010211
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Structural and spectral features of MOCVD AlGaInAsP/GaAs (100) alloys.
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- Semiconductors, 2012, v. 46, n. 6, p. 719, doi. 10.1134/S106378261206019X
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Effect of the finishing treatment of a gallium arsenide surface on the spectrum of electron states in n-GaAs (100).
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- Semiconductors, 2012, v. 46, n. 6, p. 736, doi. 10.1134/S1063782612060073
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Spinodal decomposition of GaInAsP quaternary alloys.
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- Semiconductors, 2011, v. 45, n. 11, p. 1433, doi. 10.1134/S1063782611110236
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Effect of silicon on relaxation of the crystal lattice in MOCVD-hydride AlGaAs:Si/GaAs(100) heterostructures.
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- Semiconductors, 2011, v. 45, n. 4, p. 481, doi. 10.1134/S106378261104021X
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Relaxation of crystal lattice parameters and structural ordering in InGaAs epitaxial alloys.
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- Semiconductors, 2010, v. 44, n. 8, p. 1106, doi. 10.1134/S1063782610080270
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The substructure and luminescence of low-temperature AlGaAs/GaAs(100) heterostructures.
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- Semiconductors, 2010, v. 44, n. 2, p. 184, doi. 10.1134/S1063782610020089
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Structural and optical properties of low-temperature hydride-MOCVD AlGaAs/GaAs(100) heterostructures based on omission solid solutions.
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- Semiconductors, 2009, v. 43, n. 12, p. 1610, doi. 10.1134/S1063782609120070
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Phase formation under the effect of spinodal decomposition in epitaxial alloys of Ga<sub> x</sub>In<sub>1 − x</sub>P/GaAs(100) heterostructures.
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- Semiconductors, 2009, v. 43, n. 9, p. 1221, doi. 10.1134/S106378260909022X
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Properties of barrier contacts with nanosize TiB<sub> x </sub> layers to InP.
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- Semiconductors, 2008, v. 42, n. 7, p. 777, doi. 10.1134/S1063782608070051
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ELECTRON STRUCTURE INVESTIGATIONS OF InGaP/GaAs(100) HETEROSTRUCTURES WITH InP QUANTUM DOTS.
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- International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 215, doi. 10.1142/S0219581X07004468
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New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 4, p. 105
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