Found: 27
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Robust electrical current modulation in functionalized graphene channels.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 2, p. 1641, doi. 10.1007/s10854-020-04933-z
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- Article
FIELD EFFECT NANOTRANSISTOR ON ULTRATHIN SILICON-ON-INSULATOR.
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- International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 155, doi. 10.1142/S0219581X04001936
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- Article
Changes in Behavioral Characteristics and Tyrosine Hydroxylase Levels in the Nucleus Accumbens of the Brain of DAT-HET Rats during Free Alcoholization.
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- Journal of Evolutionary Biochemistry & Physiology, 2023, v. 59, n. 2, p. 586, doi. 10.1134/S0022093023020242
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- Article
Comparative Study of the Behavior of Wistar Rats, Dopamine Transporter Heterozygous Rats and Rats after Long-Term Ethanol Consumption in the Morris Water Maze.
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- Journal of Evolutionary Biochemistry & Physiology, 2022, v. 58, n. 5, p. 1653, doi. 10.1134/S0022093022050337
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- Article
Growth of Bi2Se3/graphene heterostructures with the room temperature high carrier mobility.
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- Journal of Materials Science, 2021, v. 56, n. 15, p. 9330, doi. 10.1007/s10853-021-05836-y
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- Article
Infrared and Photoluminescence Studies on Silicon Oxide Formation in Oxygen-Implanted Silicon Annealed Under Enhanced Pressure.
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- Crystal Research & Technology, 2001, v. 36, n. 8-10, p. 943, doi. 10.1002/1521-4079(200110)36:8/10<943::AID-CRAT943>3.0.CO;2-F
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- Article
Luminescence Properties of Oxygen-Containing Silicon Annealed at Enhanced Argon Pressure.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 233, doi. 10.1002/(SICI)1521-3951(199901)211:1<233::AID-PSSB233>3.0.CO;2-B
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- Article
Ordered arrays of Si nanocrystals in SiO<sub>2</sub>: Structural, optical, and electronic properties.
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- Semiconductors, 2010, v. 44, n. 4, p. 482, doi. 10.1134/S1063782610040135
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- Article
X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO<sub>2</sub> and Si sources.
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- Semiconductors, 2010, v. 44, n. 4, p. 531, doi. 10.1134/S1063782610040214
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- Article
Electrical passivation of the silicon surface by organic monolayers of 1-octadecene.
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- Semiconductors, 2007, v. 41, n. 8, p. 991, doi. 10.1134/S1063782607080246
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- Article
Transformation of electrically active defects as a result of annealing of silicon implanted with high-energy ions.
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- Semiconductors, 2006, v. 40, n. 5, p. 543, doi. 10.1134/S106378260605006X
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- Article
Stabilization of Charge at the Interface Between the Buried Insulator and Silicon in Silicon-on-Insulator Structures.
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- Semiconductors, 2005, v. 39, n. 10, p. 1153, doi. 10.1134/1.2085262
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- Article
Traps with Near-Midgap Energies at the Bonded Si/SiO<sub>2</sub> Interface in Silicon-on-Insulator Structures.
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- Semiconductors, 2004, v. 38, n. 12, p. 1394, doi. 10.1134/1.1836059
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- Article
Charge Fluctuations at the Bonding Interface in the Silicon-on-Insulator Structures.
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- Semiconductors, 2003, v. 37, n. 11, p. 1303, doi. 10.1134/1.1626213
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- Article
Relaxation of a Defect Subsystem in Silicon Irradiated with High-Energy Heavy Ions.
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- Semiconductors, 2003, v. 37, n. 5, p. 546, doi. 10.1134/1.1575358
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- Article
The Charge Accumulation in an Insulator and the States at Interfaces of Silicon-on-Insulator Structures as a Result of Irradiation with Electrons and Gamma-Ray Photons.
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- Semiconductors, 2003, v. 37, n. 4, p. 426, doi. 10.1134/1.1568462
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- Article
Behavior of Charge in a Buried Insulator of Silicon-on-Insulator Structures Subjected to Electric Fields.
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- Semiconductors, 2002, v. 36, n. 7, p. 800, doi. 10.1134/1.1493752
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- Article
X-Ray-Emission Study of the Structure of Si:H Layers Formed by Low-Energy Hydrogen-Ion Implantation.
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- Semiconductors, 2002, v. 36, n. 5, p. 568, doi. 10.1134/1.1478550
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- Article
Transformation of Interface States in Silicon-on-Insulator Structures under Annealing in Hydrogen Atmosphere.
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- Semiconductors, 2002, v. 36, n. 1, p. 60, doi. 10.1134/1.1434515
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- Article
Interface States and Deep-Level Centers in Silicon-on-Insulator Structures.
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- Semiconductors, 2001, v. 35, n. 8, p. 912, doi. 10.1134/1.1393026
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- Article
Electrical Conductivity of Silicon-on-Insulator Structures Prepared by Bonding Silicon Wafers to a Substrate Using Hydrogen Implantation.
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- Semiconductors, 2000, v. 34, n. 9, p. 1054, doi. 10.1134/1.1309421
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- Article
Thermal Acceptors in Irradiated Silicon.
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- Semiconductors, 2000, v. 34, n. 2, p. 155
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- Article
Pressure-induced formation of thermal donor centers in silicon after oxygen ion bombardment.
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- Semiconductors, 1999, v. 33, n. 10, p. 1049, doi. 10.1134/1.1187862
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- Article
Formation of oxygen precipitates in silicon.
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- Semiconductors, 1997, v. 31, n. 8, p. 852, doi. 10.1134/1.1187240
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- Article
Decoration of Graphene in Plasma Jets of a DC Plasma Torch for 2D Printing.
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- High Energy Chemistry, 2023, v. 57, p. S200, doi. 10.1134/S0018143923070421
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- Article
Pressure related defect engineering in silicon-on-insulator-like structures produced by either oxygen or nitrogen ion implantation.
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- Physica Status Solidi (B), 2007, v. 244, n. 1, p. 443, doi. 10.1002/pssb.200672536
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- Article
Study of the Properties of Two-Dimensional MoS2 and WS2 Films Synthesized by Chemical-Vapor Deposition.
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- Semiconductors, 2020, v. 54, n. 4, p. 454, doi. 10.1134/S1063782620040193
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- Article