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Two-Dimensional Analytical Threshold Voltage Modelling of Pseudomorphic Si<sub>0:8</sub>Ge<sub>0:2</sub> p-Channel MOSFETs.
- Published in:
- Acta Physica Polonica: A, 2011, v. 120, n. 6, p. 1043, doi. 10.12693/APhysPolA.120.1043
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- Article