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20-Gbps 1300-nm range wafer-fused vertical-cavity surface-emitting lasers with InGaAs/InAlGaAs superlattice-based active region.
- Published in:
- Optical Engineering, 2022, v. 61, n. 9, p. 96109, doi. 10.1117/1.OE.61.9.096109
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- Article
Epitaxial Growth of Highly Stressed InGaAs/InAlAs Layers on InP Substrates by Molecular-Beam Epitaxy.
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- Technical Physics, 2024, v. 69, n. 6, p. 1493, doi. 10.1134/S1063784224060021
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- Article
Investigation of the Characteristics of the InGaAs/InAlGaAs Superlattice for 1300 nm Range Vertical-Cavity Surface-Emitting Lasers.
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- Technical Physics, 2023, v. 68, n. 12, p. 549, doi. 10.1134/S1063784223080078
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- Article
Studying the Optical and Structural Properties of Three-Dimensional InGaP(As) Islands Formed by Substitution of Elements of the Fifth Group.
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- Technical Physics, 2020, v. 65, n. 12, p. 2047, doi. 10.1134/S1063784220120099
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- Article
The Influence of the Waveguide Layer Composition on the Emission Parameters of 1550 nm InGaAs/InP Laser Heterostructures.
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- Semiconductors, 2023, v. 57, n. 11, p. 492, doi. 10.1134/S1063782623080134
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- Article
1550 nm Range High-Speed Single-Mode Vertical-Cavity Surface-Emitting Lasers.
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- Semiconductors, 2023, v. 57, n. 4, p. 221, doi. 10.1134/S1063782623070072
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- Article
Optical Properties of Three-Dimensional InGaP(As) Islands Formed by Substitution of Fifth-Group Elements.
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- Optics & Spectroscopy, 2021, v. 129, n. 2, p. 256, doi. 10.1134/S0030400X21020089
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- Article
The Influence of the Parameters of a Short-Period InGaAs/InGaAlAs Superlattice on Photoluminescence Efficiency.
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- Technical Physics Letters, 2020, v. 46, n. 11, p. 1128, doi. 10.1134/S1063785020110267
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- Article
Formation of Highly Conducting Optically Transparent Films with Multigraphene Structure via Carbonization of Polyimide Langmuir–Blodgett Films.
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- Technical Physics Letters, 2019, v. 45, n. 5, p. 471, doi. 10.1134/S1063785019050067
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- Article