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Radiative Properties of Up-Conversion Coatings Formed on the Basis of Erbium-Doped Barium Titanate Xerogels.
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- Semiconductors, 2021, v. 55, n. 9, p. 735, doi. 10.1134/S1063782621090062
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- Article
Decomposition of the Solution to a Two-Dimensional Singularly Perturbed Convection–Diffusion Equation with Variable Coefficients in a Square and Estimates in Hölder Norms.
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- Computational Mathematics & Mathematical Physics, 2021, v. 61, n. 2, p. 194, doi. 10.1134/S0965542521020044
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- Article
Demercaptanization of Light Hydrocarbon Fractions with Strong Aqueous Ammonia without Producing Sulfur Caustic Wastewater.
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- Theoretical Foundations of Chemical Engineering, 2020, v. 54, n. 5, p. 1078, doi. 10.1134/S004057952005005X
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- Article
Ge/Si Core/Shell Quantum Dots in an Alumina Matrix: Influence of the Annealing Temperature on the Optical Properties.
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- Semiconductors, 2020, v. 54, n. 2, p. 181, doi. 10.1134/S1063782620020207
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- Article
Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates.
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- Semiconductors, 2019, v. 53, n. 10, p. 1318, doi. 10.1134/S1063782619100154
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- Article
Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers.
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- Semiconductors, 2019, v. 53, n. 10, p. 1357, doi. 10.1134/S1063782619100038
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- Article
Estimates in Hölder Classes for the Solution of an Inhomogeneous Dirichlet Problem for a Singularly Perturbed Homogeneous Convection–Diffusion Equation.
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- Computational Mathematics & Mathematical Physics, 2019, v. 59, n. 2, p. 253, doi. 10.1134/S0965542519020039
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- Article
Treatment of Sulfide Alkali Waste Waters from Mercaptans Using Distillation.
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- Theoretical Foundations of Chemical Engineering, 2018, v. 52, n. 4, p. 673, doi. 10.1134/S0040579518040024
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- Article
Nonequilibrium Effects in Atmospheric Perturbations Caused by Solar Radiation Flux.
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- Geomagnetism & Aeronomy, 2018, v. 58, n. 1, p. 106, doi. 10.1134/S0016793218010024
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- Article
Hölder Estimates for the Regular Component of the Solution to a Singularly Perturbed Convection-Diffusion Equation.
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- Computational Mathematics & Mathematical Physics, 2017, v. 57, n. 12, p. 1935, doi. 10.1134/S0965542517120053
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- Article
Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen.
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- Semiconductors, 2017, v. 51, n. 12, p. 1537, doi. 10.1134/S1063782617120041
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- Article
Development of mining technologies of underground block leaching of metals from the ores off-balanced in terms of useful component.
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- Metallurgical & Mining Industry, 2017, n. 8, p. 44
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- Publication type:
- Article
Exciton self-trapped on Si-Si dimers on the surface of silicon nanocrystal: Experimental evidence.
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- Physica Status Solidi (B), 2016, v. 253, n. 11, p. 2150, doi. 10.1002/pssb.201600525
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- Article
Si and Ge nanocrystals in resonator multilayer structures.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 11, p. 2867, doi. 10.1002/pssa.201600383
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- Article
Prediction and ensuring the reliability of buildings elements and structures of surface complex at reconstruction.
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- Metallurgical & Mining Industry, 2016, n. 9, p. 54
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- Article
In celebration of the 60th birthday of Professor Alemdar Hasanoğlu (Hasanov).
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- 2016
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- Publication type:
- Biography
Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements.
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- Semiconductors, 2016, v. 50, n. 2, p. 261, doi. 10.1134/S1063782616020159
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- Article
Determination of reliability and justification of object parameters on the surface of mines taking into account change-over to the lighter enclosing structures.
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- Metallurgical & Mining Industry, 2015, n. 12, p. 378
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- Article
Absorption cross section for the I → I transition of Er in Si:Er:O/SOI epitaxial layers.
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- JETP Letters, 2015, v. 100, n. 12, p. 807, doi. 10.1134/S0021364014240096
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- Article
Effect of surface Si-Si dimers on photoluminescence of silicon nanocrystals in the silicon dioxide matrix.
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- Journal of Experimental & Theoretical Physics, 2014, v. 118, n. 5, p. 728, doi. 10.1134/S1063776114040116
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- Article
Effect of the annealing temperature on the low-temperature photoluminescence in Si:Er light-emitting structures grown by molecular-beam epitaxy.
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- Semiconductors, 2013, v. 47, n. 10, p. 1333, doi. 10.1134/S1063782613100035
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- Article
Determination of the excitation cross section of photoluminescence from an Er ion in the case of homogeneous and inhomogeneous optical excitation.
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- Semiconductors, 2012, v. 46, n. 11, p. 1372, doi. 10.1134/S1063782612110036
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- Article
Mechanism of the subband excitation of photoluminescence from erbium ions in silicon under high-intensity optical pumping.
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- Semiconductors, 2012, v. 46, n. 11, p. 1407, doi. 10.1134/S1063782612110231
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- Article
Electroluminescence at a wavelength of 1.54 μm in Si:Er/Si structures consisting of a number of p-n junctions.
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- Semiconductors, 2011, v. 45, n. 11, p. 1430, doi. 10.1134/S1063782611110169
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- Article
mGlu2/3 Agonists - a New Approach to the Treatment of Schizophrenia: Results of a Randomized Double-Blind Trial.
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- Neuroscience & Behavioral Physiology, 2011, v. 41, n. 6, p. 559, doi. 10.1007/s11055-011-9455-0
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- Article
Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy.
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- Semiconductors, 2011, v. 45, n. 1, p. 130, doi. 10.1134/S1063782611010143
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- Article
Electroluminescence at a wavelength of 1.5 μm in Si:Er/Si diode structures doped with Al, Ga, and B acceptors.
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- Semiconductors, 2010, v. 44, n. 12, p. 1597, doi. 10.1134/S1063782610120110
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- Article
Specific features of the mechanisms of excitation of erbium photoluminescence in epitaxial Si:Er/Si structures.
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- Semiconductors, 2010, v. 44, n. 11, p. 1472, doi. 10.1134/S1063782610110187
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- Article
PECVD growth of crystalline silicon from its tetrafluoride.
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- Crystal Research & Technology, 2010, v. 45, n. 9, p. 899, doi. 10.1002/crat.201000090
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- Article
Plasmaenhanced chemical vapor deposition of 99.95 28Si in form of nano and polycrystals using silicon tetrafluoride precursor.
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- Crystal Research & Technology, 2010, v. 45, n. 9, p. 983
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- Article
POINTWISE APPROXIMATION OF CORNER SINGULARITIES FOR SINGULARLY PERTURBED ELLIPTIC PROBLEMS WITH CHARACTERISTIC LAYERS.
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- International Journal of Numerical Analysis & Modeling, 2010, v. 7, n. 3, p. 416
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- Article
GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 μm.
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- Semiconductors, 2010, v. 44, n. 3, p. 405, doi. 10.1134/S1063782610030231
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- Article
Dependence of the energy of the resonance states of an acceptor in silicon on the host isotopic mass.
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- JETP Letters, 2009, v. 90, n. 6, p. 455, doi. 10.1134/S0021364009180118
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- Article
Isotope-modified silicon layers obtained by plasma enhanced chemical vapor deposition from gaseous silicon tetrafluoride.
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- Technical Physics Letters, 2009, v. 35, n. 10, p. 948, doi. 10.1134/S1063785009100216
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- Article
Nanotechnology-Derived materials: Potential risk in preparation and use.
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- Russian Journal of General Chemistry, 2009, v. 79, n. 9, p. 1974, doi. 10.1134/S107036320909028X
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- Article
Fabrication of nanocrystalline silicon layers by plasma enhanced chemical vapor deposition from silicon tetrafluoride.
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- Semiconductors, 2009, v. 43, n. 7, p. 968, doi. 10.1134/S1063782609070288
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- Article
Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride.
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- JETP Letters, 2009, v. 89, n. 2, p. 73, doi. 10.1134/S0021364009020052
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- Article
Radioluminography measurement of tritium distribution.
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- Atomic Energy, 2008, v. 104, n. 3, p. 218, doi. 10.1007/s10512-008-9019-8
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- Article
Electrical properties of Si:Er/Si layers grown by sublimation molecular-beam epitaxy.
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- Semiconductors, 2008, v. 42, n. 2, p. 137, doi. 10.1134/S1063782608020036
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- Article
Erbium ion electroluminescence in p <sup>++</sup>/ n <sup>+</sup>/ n-Si:Er/ n <sup>++</sup> silicon diode structures.
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- Semiconductors, 2007, v. 41, n. 11, p. 1312, doi. 10.1134/S1063782607110073
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- Article
On the accuracy of grid approximations to nonsmooth solutions of a singularly perturbed reaction-diffusion equation in the square.
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- Differential Equations, 2006, v. 42, n. 7, p. 954, doi. 10.1134/S0012266106070044
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- Article
Revamping of the process condensate treatment unit. G-43-107M/1 unit at LiNOS Ltd.
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- Chemistry & Technology of Fuels & Oils, 2006, v. 42, n. 3, p. 229, doi. 10.1007/s10553-006-0063-6
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- Article
Exhaustive local treatment of refinery effluents to remove hydrogen sulfide and ammonia.
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- Chemistry & Technology of Fuels & Oils, 2006, v. 42, n. 2, p. 154, doi. 10.1007/s10553-006-0048-5
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- Publication type:
- Article
Light-Emitting Si:Er Structures Produced by Molecular-Beam Epitaxy: High-Resolution Photoluminescence Spectroscopy.
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- Semiconductors, 2005, v. 39, n. 12, p. 1399, doi. 10.1134/1.2140312
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- Article
An optimal order numerical quadrature approximation of a planar isoparametric eigenvalue problem on triangular finite element meshes.
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- Calcolo, 2005, v. 42, n. 2, p. 47, doi. 10.1007/s10092-005-0097-x
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- Article
Manifestation of the equilibrium hole distribution in photoluminescence of n-InN.
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- Physica Status Solidi (B), 2005, v. 242, n. 4, p. R33, doi. 10.1002/pssb.200510007
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- Article
Spectroscopic Parameters of the Absorption Bands Related to the Local Vibrational Modes of Carbon and Oxygen Impurities in Silicon Enriched with <sup>28</sup>Si, <sup>29</sup>Si, and <sup>30</sup>Si Isotopes.
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- Semiconductors, 2005, v. 39, n. 3, p. 300, doi. 10.1134/1.1882791
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- Article
On Nonergodicity of Some Continuous-Time Markov Chains.
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- Journal of Mathematical Sciences, 2004, v. 122, n. 4, p. 3332, doi. 10.1023/B:JOTH.0000031878.03206.fc
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- Article
On the Theory of Difference Schemes for Singularly Perturbed Equations.
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- Differential Equations, 2004, v. 40, n. 7, p. 959, doi. 10.1023/B:DIEQ.0000047027.16299.38
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- Article
Photoluminescence at 1.5 μm from Single-Crystal Silicon Layers Subjected to Mechanical Treatment.
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- Semiconductors, 2003, v. 37, n. 12, p. 1380, doi. 10.1134/1.1634657
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- Article