Works by Anderson, Travis


Results: 80
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    Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates.

    Published in:
    Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200828
    By:
    • Tadjer, Marko J.;
    • Waltereit, Patrick;
    • Kirste, Lutz;
    • Müller, Stefan;
    • Lundh, James Spencer;
    • Jacobs, Alan G.;
    • Koehler, Andrew D.;
    • Komarov, Pavel;
    • Raad, Peter;
    • Gaskins, John;
    • Hopkins, Patrick;
    • Odnoblyudov, Vlad;
    • Basceri, Cem;
    • Anderson, Travis J.;
    • Hobart, Karl D.
    Publication type:
    Article
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    Characterization of an Mg-implanted GaN p-i-n diode.

    Published in:
    Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 12, p. 2772, doi. 10.1002/pssa.201532506
    By:
    • Greenlee, Jordan D.;
    • Anderson, Travis J.;
    • Feigelson, Boris N.;
    • Hobart, Karl D.;
    • Kub, Francis J.
    Publication type:
    Article
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    Cyclic Voltammetry Study of the Mn-Substituted Polyoxoanions [Mn.

    Published in:
    Electroanalysis, 2011, v. 23, n. 6, p. 1427, doi. 10.1002/elan.201000735
    By:
    • Ammam, Malika;
    • Keita, Bineta;
    • Nadjo, Louis;
    • Mbomekalle, Israel-Martyr;
    • Ritorto, Michelle D.;
    • Anderson, Travis M.;
    • Neiwert, Wade A.;
    • Hill, Craig L.;
    • Fransaer, Jan
    Publication type:
    Article
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    The cross‐sectional association between APOE ε4 and cognition in midlife: Baseline data analysis of the Physical Activity and Alzheimer's Disease study ‐ II.

    Published in:
    Alzheimer's & Dementia: The Journal of the Alzheimer's Association, 2022, v. 18, n. 7, p. 1, doi. 10.1002/alz.069364
    By:
    • Park, Kyoung Shin;
    • Slutsky‐Ganesh, Alexis B;
    • Anderson, Travis;
    • Holder, Hadassah;
    • Vance, Jarod C;
    • DuBois, Samantha L;
    • Kibildis, Samuel;
    • Labban, Jeffrey D;
    • Wahlheim, Christopher N;
    • Wideman, Laurie;
    • Etnier, Jennifer L
    Publication type:
    Article
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    Process Optimization for Selective Area Doping of GaN by Ion Implantation.

    Published in:
    Journal of Electronic Materials, 2021, v. 50, n. 8, p. 4642, doi. 10.1007/s11664-021-08984-8
    By:
    • Ebrish, Mona A.;
    • Anderson, Travis J.;
    • Jacobs, Alan G.;
    • Gallagher, James C.;
    • Hite, Jennifer K.;
    • Mastro, Michael A.;
    • Feigelson, Boris N.;
    • Wang, Yekan;
    • Liao, Michael;
    • Goorsky, Mark;
    • Hobart, Karl D.
    Publication type:
    Article
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