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Effects of phosphorous and antimony doping on thin Ge layers grown on Si.
- Published in:
- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-57937-8
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- Publication type:
- Article
Optimisation of the dislocation filter layers in 1.3‐μm InAs/GaAs quantum‐dot lasers monolithically grown on Si substrates.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2015, v. 9, n. 2, p. 61, doi. 10.1049/iet-opt.2014.0078
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- Article
Inversion Boundary Annihilation in GaAs Monolithically Grown on On‐Axis Silicon (001).
- Published in:
- Advanced Optical Materials, 2020, v. 8, n. 22, p. 1, doi. 10.1002/adom.202000970
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- Article
Co-Package Technology Platform for Low-Power and Low-Cost Data Centers.
- Published in:
- Applied Sciences (2076-3417), 2021, v. 11, n. 13, p. 6098, doi. 10.3390/app11136098
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- Article
Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate.
- Published in:
- Nature Photonics, 2011, v. 5, n. 7, p. 416, doi. 10.1038/nphoton.2011.120
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- Article