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All-Polymer Bistable Resistive Memory Device Based on Nanoscale Phase-Separated PCBM-Ferroelectric Blends.
Published in:
Advanced Functional Materials, 2013, v. 23, n. 17, p. 2145, doi. 10.1002/adfm.201202724
By:
- Khan, M. A.;
- Bhansali, Unnat S.;
- Cha, Dongkyu;
- Alshareef, H. N.
Publication type:
Article
Synthesis and Characterization of Pb(Zr0.53, Ti0.47)O3-Pb(Nb1/3, Zn2/3)O3 Thin Film Cantilevers for Energy Harvesting Applications.
Published in:
Smart Materials Research, 2012, p. 1, doi. 10.1155/2012/872439
By:
- Fuentes-Fernandez, E. M. A.;
- Debray-Mechtaly, W.;
- Quevedo-Lopez, M. A.;
- Gnade, B.;
- Leon-Salguero, E.;
- Shah, P.;
- Alshareef, H. N.
Publication type:
Article
SnO2 Anode Surface Passivation by Atomic Layer Deposited HfO2 Improves Li-Ion Battery Performance.
Published in:
Small, 2014, v. 10, n. 14, p. 2849, doi. 10.1002/smll.201303898
By:
- Yesibolati, Nulati;
- Shahid, Muhammad;
- Chen, Wei;
- Hedhili, M. N.;
- Reuter, M. C.;
- Ross, F. M.;
- Alshareef, H. N.
Publication type:
Article
Li-Ion Batteries: SnO2 Anode Surface Passivation by Atomic Layer Deposited HfO2 Improves Li-Ion Battery Performance (Small 14/2014).
Published in:
Small, 2014, v. 10, n. 14, p. 2738, doi. 10.1002/smll.201470081
By:
- Yesibolati, Nulati;
- Shahid, Muhammad;
- Chen, Wei;
- Hedhili, M. N.;
- Reuter, M. C.;
- Ross, F. M.;
- Alshareef, H. N.
Publication type:
Article
Microfabricated Pseudocapacitors Using Ni(OH)2 Electrodes Exhibit Remarkable Volumetric Capacitance and Energy Density.
Published in:
Advanced Energy Materials, 2015, v. 5, n. 2, p. n/a, doi. 10.1002/aenm.201401303
By:
- Kurra, Narendra;
- Alhebshi, Nuha A.;
- Alshareef, H. N.
Publication type:
Article
Nanostructured Ternary Electrodes for Energy-Storage Applications.
Published in:
Advanced Energy Materials, 2012, v. 2, n. 3, p. 381, doi. 10.1002/aenm.201100609
By:
- Rakhi, Raghavan Baby;
- Chen, Wei;
- Cha, Dongkyu;
- Alshareef, H. N.
Publication type:
Article
High-Performance Non-Volatile Organic Ferroelectric Memory on Banknotes.
Published in:
Advanced Materials, 2012, v. 24, n. 16, p. 2165, doi. 10.1002/adma.201200626
By:
- Khan, M.A.;
- Bhansali, Unnat S.;
- Alshareef, H. N.
Publication type:
Article
Influence of calcination temperature on the morphology and energy storage properties of cobalt oxide nanostructures directly grown over carbon cloth substrates.
Published in:
Materials for Renewable & Sustainable Energy, 2013, v. 2, n. 3/4, p. 1, doi. 10.1007/s40243-013-0017-y
By:
- Rakhi, R. B.;
- Chen, Wei;
- Cha, Dongkyu;
- Alshareef, H. N.
Publication type:
Article
Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer.
Published in:
Scientific Reports, 2015, p. 9617, doi. 10.1038/srep09617
By:
- Wang, Zhenwei;
- Nayak, Pradipta K.;
- Caraveo-Frescas, J. A.;
- Wei, Nini;
- Hedhili, M. N.;
- Alshareef, H. N.;
- Al-Jawhari, Hala A.
Publication type:
Article
Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility.
Published in:
Scientific Reports, 2014, p. 1, doi. 10.1038/srep05243
By:
- Caraveo-Frescas, J. A.;
- Khan, M. A.;
- Alshareef, H. N.
Publication type:
Article
Thin Film Complementary Metal Oxide Semiconductor (CMOS) Device Using a Single-Step Deposition of the Channel Layer.
Published in:
Scientific Reports, 2014, p. 1, doi. 10.1038/srep04672
By:
- Nayak, Pradipta K.;
- Caraveo-Frescas, J. A.;
- Zhenwei Wang;
- Hedhili, M. N.;
- Wang, Q. X.;
- Alshareef, H. N.
Publication type:
Article
Correction to "Anisotropic Superconducting Nb2CTx MXene Processed by Atomic Exchange at the Wafer Scale".
Published in:
Advanced Materials, 2024, v. 36, n. 30, p. 1, doi. 10.1002/adma.202405648
By:
- Xu, X.;
- Zhang, C.;
- Yin, J.;
- Smajic, J.;
- Bahabri, M.;
- Lei, Y.;
- Hedhili, M. N.;
- Hota, M. K.;
- Shi, L.;
- Guo, T.;
- Zheng, D.;
- El‐Demellawi, J. K.;
- Lanza, M.;
- Costa, P. M. F. J.;
- Bakr, O. M.;
- Mohammed, O. F.;
- Zhang, X.;
- Alshareef, H. N.
Publication type:
Article

Found: 12

All-Polymer Bistable Resistive Memory Device Based on Nanoscale Phase-Separated PCBM-Ferroelectric Blends.

Synthesis and Characterization of Pb(Zr<sub>0.53</sub>, Ti<sub>0.47</sub>)O<sub>3</sub>-Pb(Nb<sub>1/3</sub>, Zn<sub>2/3</sub>)O<sub>3</sub> Thin Film Cantilevers for Energy Harvesting Applications.

SnO<sub>2</sub> Anode Surface Passivation by Atomic Layer Deposited HfO<sub>2</sub> Improves Li-Ion Battery Performance.

Li-Ion Batteries: SnO<sub>2</sub> Anode Surface Passivation by Atomic Layer Deposited HfO<sub>2</sub> Improves Li-Ion Battery Performance (Small 14/2014).

Microfabricated Pseudocapacitors Using Ni(OH)<sub>2</sub> Electrodes Exhibit Remarkable Volumetric Capacitance and Energy Density.

Nanostructured Ternary Electrodes for Energy-Storage Applications.

High-Performance Non-Volatile Organic Ferroelectric Memory on Banknotes.

Influence of calcination temperature on the morphology and energy storage properties of cobalt oxide nanostructures directly grown over carbon cloth substrates.

Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer.

Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility.

Thin Film Complementary Metal Oxide Semiconductor (CMOS) Device Using a Single-Step Deposition of the Channel Layer.

Correction to "Anisotropic Superconducting Nb<sub>2</sub>CT<sub>x</sub> MXene Processed by Atomic Exchange at the Wafer Scale".