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Spontaneous far-IR emission accompanying transitions of charge carriers between levels of quantum dots.
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- JETP Letters, 1998, v. 67, n. 4, p. 275
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- Article
Quantum-dot injection heterolaser with 3.3 W output power.
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- Technical Physics Letters, 1999, v. 25, n. 6, p. 438, doi. 10.1134/1.1262530
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- Article
Spontaneous long-wavelength interlevel emission in quantum-dot laser structures.
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- Technical Physics Letters, 1998, v. 24, n. 8, p. 590
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- Publication type:
- Article
Lasing in submonolayer InAs/AlGaAs structures without external optical confinement.
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- Technical Physics Letters, 1998, v. 24, n. 7, p. 567, doi. 10.1134/1.1262198
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- Article
Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 351, doi. 10.1134/1.1262118
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- Article
Fabrication of InAs quantum dots on silicon.
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- Technical Physics Letters, 1998, v. 24, n. 4, p. 290, doi. 10.1134/1.1262087
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- Article
Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm.
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- Technical Physics Letters, 1998, v. 24, n. 1, p. 22, doi. 10.1134/1.1261977
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- Article
Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure.
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- Technical Physics Letters, 1997, v. 23, n. 8, p. 597, doi. 10.1134/1.1261764
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- Article
Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W.
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- Technical Physics Letters, 1997, v. 23, n. 2, p. 149, doi. 10.1134/1.1261567
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- Article
Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement.
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- Technical Physics Letters, 1997, v. 23, n. 1, p. 23, doi. 10.1134/1.1261607
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- Publication type:
- Article
LOCAL ELECTRONIC STRUCTURE OF N ATOMS IN Ga(In)AsN BY SOFT-X-RAY ABSORPTION AND EMISSION:: OPTICAL EFFICIENCY.
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- International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 95, doi. 10.1142/S0219581X04001869
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- Publication type:
- Article
Long-Term Stability of Long-Wavelength (>1.25 μm) Quantum-Dot Lasers Fabricated on GaAs Substrates.
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- Technical Physics, 2003, v. 48, n. 1, p. 131, doi. 10.1134/1.1538744
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- Article
InAs-GaAs quantum dots: From growth to lasers.
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- Physica Status Solidi (B), 1996, v. 194, n. 1, p. 159, doi. 10.1002/pssb.2221940116
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- Publication type:
- Article
InAs/GaAs quantum dots radiative recombination from zero-dimensional states.
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- Physica Status Solidi (B), 1995, v. 188, n. 1, p. 249, doi. 10.1002/pssb.2221880122
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- Article
Vitalii Ivanovich Stafeev (on his 80th birtday).
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- Semiconductors, 2009, v. 43, n. 1, p. 130, doi. 10.1134/S1063782609010254
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- Article
Injection lasers with a broad emission spectrum on the basis of self-assembled quantum dots.
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- Semiconductors, 2007, v. 41, n. 5, p. 606, doi. 10.1134/S1063782607050223
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- Publication type:
- Article
An X-ray diffraction and electron-microscopic study of the influence of gamma radiation on multilayer AlGaAs/InGaAs/GaAs heterostructures.
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- Semiconductors, 2006, v. 40, n. 6, p. 687, doi. 10.1134/S1063782606060145
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- Article
Ultralow Internal Optical Loss in Separate-Confinement Quantum-Well Laser Heterostructures.
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- Semiconductors, 2004, v. 38, n. 12, p. 1430, doi. 10.1134/1.1836066
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- Article
MOCVD-Grown AlGaN/GaN Heterostructures with High Electron Mobility.
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- Semiconductors, 2004, v. 38, n. 11, p. 1323, doi. 10.1134/1.1823068
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- Article
Solar Photovoltaics: Trends and Prospects.
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- Semiconductors, 2004, v. 38, n. 8, p. 899, doi. 10.1134/1.1787110
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- Article
Lasing at 1.5 μm in Quantum Dot Structures on GaAs Substrates.
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- Semiconductors, 2003, v. 37, n. 12, p. 1411, doi. 10.1134/1.1634663
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- Publication type:
- Article
Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29μm.
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- Semiconductors, 2003, v. 37, n. 10, p. 1239, doi. 10.1134/1.1619525
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- Article
Control over the Parameters of InAs–GaAs Quantum Dot Arrays in the Stranski–Krastanow Growth Mode.
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- Semiconductors, 2003, v. 37, n. 7, p. 861, doi. 10.1134/1.1592865
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- Article
Mid-Infrared (λ = 2.775μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy.
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- Semiconductors, 2003, v. 37, n. 6, p. 736, doi. 10.1134/1.1582546
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- Article
High Efficiency (η[sub D] > 80%) Long Wavelength (λ > 1.25 μm) Quantum Dot Diode Lasers on GaAs Substrates.
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- Semiconductors, 2002, v. 36, n. 11, p. 1315, doi. 10.1134/1.1521237
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- Article
The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix.
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- Semiconductors, 2002, v. 36, n. 9, p. 1020, doi. 10.1134/1.1507285
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- Article
In Memory of Aleksei Petrovich Shotov.
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- 2001
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- Publication type:
- Obituary
Comparative Analysis of Long-Wavelength (1.3μm) VCSELs on GaAs Substrates.
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- Semiconductors, 2001, v. 35, n. 7, p. 847, doi. 10.1134/1.1385723
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- Publication type:
- Article
1.3μm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them.
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- Semiconductors, 2001, v. 35, n. 7, p. 854, doi. 10.1134/1.1385724
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- Publication type:
- Article
The Power Density Giving Rise to Optical Degradation of Mirrors in InGaAs/AlGaAs/GaAs-Based Laser Diodes.
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- Semiconductors, 2000, v. 34, n. 11, p. 1341, doi. 10.1134/1.1325436
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- Article
Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix.
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- Semiconductors, 2000, v. 34, n. 7, p. 810, doi. 10.1134/1.1188079
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- Article
Properties of Wide-Mesastripe InGaAsP/InP Lasers.
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- Semiconductors, 2000, v. 34, n. 7, p. 853, doi. 10.1134/1.1188087
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- Article
Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3μm Wavelength Range.
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- Semiconductors, 2000, v. 34, n. 5, p. 594, doi. 10.1134/1.1188034
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- Article
Power Conversion Efficiency of Quantum Dot Laser Diodes.
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- Semiconductors, 2000, v. 34, n. 5, p. 609, doi. 10.1134/1.1188038
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- Publication type:
- Article
Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots.
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- Semiconductors, 2000, v. 34, n. 4, p. 481, doi. 10.1134/1.1188011
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- Article
Aleksandr Aleksandrovich Rogachev.
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- Semiconductors, 2000, v. 34, n. 4, p. 493, doi. 10.1134/1.1188013
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- Article
Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots.
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- Semiconductors, 2000, v. 34, n. 3, p. 323, doi. 10.1134/1.1187980
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- Article
A Spatially Single-Mode Laser for a Range of 1.25–1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate.
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- Semiconductors, 2000, v. 34, n. 1, p. 119, doi. 10.1134/1.1187954
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- Publication type:
- Article
Gain characteristics of quantum-dot injection lasers.
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- Semiconductors, 1999, v. 33, n. 9, p. 1013, doi. 10.1134/1.1187828
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- Publication type:
- Article
Blue-green ZnSe lasers with a new type of active region.
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- Semiconductors, 1999, v. 33, n. 9, p. 1016, doi. 10.1134/1.1187829
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- Article
Heteroepitaxial growth of InAs on Si: a new type of quantum dot.
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- Semiconductors, 1999, v. 33, n. 9, p. 972, doi. 10.1134/1.1187815
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- Publication type:
- Article
Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands.
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- Semiconductors, 1999, v. 33, n. 8, p. 901, doi. 10.1134/1.1187627
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- Publication type:
- Article
Lasing at a wavelength close to 1.3 μm in InAs quantum-dot structures.
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- Semiconductors, 1999, v. 33, n. 8, p. 929, doi. 10.1134/1.1187631
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- Publication type:
- Article
Investigation of MOVPE-grown GaN layers doped with As atoms.
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- Semiconductors, 1999, v. 33, n. 7, p. 728, doi. 10.1134/1.1187770
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- Publication type:
- Article
Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host.
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- Semiconductors, 1999, v. 33, n. 7, p. 788, doi. 10.1134/1.1187782
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- Article
InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 μm.
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- Semiconductors, 1999, v. 33, n. 5, p. 586, doi. 10.1134/1.1187733
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- Article
Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host.
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- Semiconductors, 1999, v. 33, n. 4, p. 467, doi. 10.1134/1.1187713
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- Publication type:
- Article
Photo- and electroluminescence in the 1.3-μm wavelength range from quantum-dot structures grown on GaAs substrates.
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- Semiconductors, 1999, v. 33, n. 2, p. 153, doi. 10.1134/1.1187662
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- Article
Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix.
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- Semiconductors, 1999, v. 33, n. 2, p. 165, doi. 10.1134/1.1187664
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- Publication type:
- Article
Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region.
- Published in:
- Semiconductors, 1998, v. 32, n. 12, p. 1323, doi. 10.1134/1.1187622
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- Article