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Investigation of MOVPE-grown GaN layers doped with As atoms.
Published in:
Semiconductors, 1999, v. 33, n. 7, p. 728, doi. 10.1134/1.1187770
By:
- Tsatsul’nikov, A. F.;
- Ber, B. Ya.;
- Kartashova, A. P.;
- Kudryavtsev, Yu. A.;
- Ledentsov, N. N.;
- Lundin, V. V.;
- Maksimov, M. V.;
- Sakharov, A. V.;
- Usikov, A. S.;
- Alfërov, Zh. I.;
- Hoffmann, A.
Publication type:
Article
InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 μm.
Published in:
Semiconductors, 1999, v. 33, n. 5, p. 586, doi. 10.1134/1.1187733
By:
- Maleev, N. A.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Egorov, A. Yu.;
- Ustinov, V. M.;
- Krestnikov, I. L.;
- Lunev, A. V.;
- Sakharov, A. V.;
- Volovik, B. V.;
- Ledentsov, N. N.;
- Kop’ev, P. S.;
- Alfërov, Zh. I.;
- Bimberg, D.
Publication type:
Article
Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host.
Published in:
Semiconductors, 1999, v. 33, n. 4, p. 467, doi. 10.1134/1.1187713
By:
- Tsatsul’nikov, A. F.;
- Volovik, B. V.;
- Ledentsov, N. N.;
- Maksimov, M. V.;
- Egorov, A. Yu.;
- Kovsh, A. R.;
- Ustinov, V. M.;
- Zhukov, A. E.;
- Kop’ev, P. S.;
- Alfërov, Zh. I.;
- Kozin, I. É.;
- Belousov, M. V.;
- Bimberg, D.
Publication type:
Article
Quantum-dot lasers: Principal components of the threshold current density.
Published in:
Semiconductors, 1997, v. 31, n. 9, p. 947, doi. 10.1134/1.1187140
By:
- Zaıtsev, S. V.;
- Gordeev, N. Yu.;
- Kopchatov, V. I.;
- Georgievskiı, A. M.;
- Ustinov, V. M.;
- Zhukov, A. E.;
- Egorov, A. Yu.;
- Kovsh, A. R.;
- Ledentsov, N. N.;
- Kop’ev, P. S.;
- Alfërov, Zh. I.;
- Bimberg, D.
Publication type:
Article

Found: 4

Investigation of MOVPE-grown GaN layers doped with As atoms.

InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 μm.

Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host.

Quantum-dot lasers: Principal components of the threshold current density.