Impedance Study of GaN and InGaN Semiconductor Anion Selective Electrodes.
- Published in:
- Electroanalysis, 2008, v. 20, n. 7, p. 789, doi. 10.1002/elan.200704100
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- Publication type:
- Article
Works by Alexandrov, Dimiter
Results: 8
1
2
Evaluation of GaN and In<sub>0.2</sub>Ga<sub>0.8</sub>N Semiconductors as Potentiometric Anion Selective Electrodes.
- Published in:
- Electroanalysis, 2007, v. 19, n. 17, p. 1799, doi. 10.1002/elan.200703936
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- Publication type:
- Article
3
Dielectric susceptibility of InN and related alloys.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, p. 123, doi. 10.1007/s10854-007-9158-z
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- Publication type:
- Article
4
Piezoelectric Elements with PVDF–TrFE/MWCNT-Aligned Composite Nanowires for Energy Harvesting Applications.
- Published in:
- Crystals (2073-4352), 2023, v. 13, n. 12, p. 1626, doi. 10.3390/cryst13121626
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- Publication type:
- Article
5
InN grown by migration enhanced afterglow (MEAglow).
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 1, p. 41, doi. 10.1002/pssa.201100102
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- Publication type:
- Article
6
Energy Release in Deuterium–Constantan Interactions.
- Published in:
- Energies (19961073), 2025, v. 18, n. 4, p. 856, doi. 10.3390/en18040856
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- Publication type:
- Article
7
Low‐energy nuclear fusion reactions in solids: Experiments.
- Published in:
- International Journal of Energy Research, 2021, v. 45, n. 8, p. 12234, doi. 10.1002/er.6356
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- Publication type:
- Article
8
INTERACTION BETWEEN POSITIVE HYDROGEN IONS AND ELECTRONS LOCATED IN INDIUM NITRIDE CONTAINING OXYGEN IMPURITIES.
- Published in:
- NANO (1793-2920), 2008, v. 3, n. 5, p. 387, doi. 10.1142/S1793292008001246
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- Publication type:
- Article