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THE MONTE-CARLO SIMULATION OF TRANSPORT IN QUANTUM WELL GaAs/AlGaAs HETEROSTRUCTURE DOPED WITH SHALLOW DONORS UNDER IMPURITY BREAKDOWN.
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- International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 253, doi. 10.1142/S0219581X0700447X
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- Article
Magnetoresistance of a HgTe/CdHgTe Double Quantum Well in an In-Plane Magnetic Field.
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- JETP Letters, 2023, v. 118, n. 12, p. 899, doi. 10.1134/S0021364023603627
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- Article
Simultaneous Observation of the Cyclotron Resonances of Electrons and Holes in a HgTe/CdHgTe Double Quantum Well under "Optical Gate" Effect.
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- JETP Letters, 2023, v. 118, n. 11, p. 867, doi. 10.1134/S0021364023603536
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Energy Spectrum of the Valence Band in HgTe Quantum Wells on the Way from a Two- to Three-Dimensional Topological Insulator.
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- JETP Letters, 2023, v. 117, n. 12, p. 916, doi. 10.1134/S0021364023601240
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- Article
Features of Magnetotransport in a HgTe/CdHgTe Double Quantum Well with an Intermediate Degree of Band Inversion.
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- JETP Letters, 2022, v. 116, n. 6, p. 385, doi. 10.1134/S0021364022601646
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Effects of the Electron—Electron Interaction in the Magneto-Absorption Spectra of HgTe/CdHgTe Quantum Wells with an Inverted Band Structure.
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- JETP Letters, 2020, v. 112, n. 8, p. 508, doi. 10.1134/S0021364020200059
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- Article
Temperature Quenching of the Terahertz Photoluminescence of Shallow Acceptors in HgCdTe Ternary Alloy.
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- Semiconductors, 2024, v. 58, n. 1, p. 28, doi. 10.1134/S106378262401007X
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Model of a Terahertz Quantum-Cascade Laser Based on Two-Dimensional Plasmons.
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- Semiconductors, 2021, v. 55, n. 11, p. 828, doi. 10.1134/S1063782621100092
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- Article
Continuous-Wave Stimulated Emission in the 10–14-μm Range under Optical Excitation in HgCdTe/CdHgTe-QW Structures with Quasirelativistic Dispersion.
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- Semiconductors, 2020, v. 54, n. 10, p. 1371, doi. 10.1134/S1063782620100322
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Investigation of Stimulated Emission from HgTe/CdHgTe Quantum-Well Heterostructures in the 3–5 μm Atmospheric Transparency Window.
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- Semiconductors, 2020, v. 54, n. 10, p. 1365, doi. 10.1134/S106378262010019X
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- Article
Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region.
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- Semiconductors, 2020, v. 54, n. 9, p. 1119, doi. 10.1134/S1063782620090304
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- Article
Investigation into Microwave Absorption in Semiconductors for Frequency-Multiplication Devices and Radiation-Output Control of Continuous and Pulsed Gyrotrons.
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- Semiconductors, 2020, v. 54, n. 9, p. 1069, doi. 10.1134/S1063782620090195
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- Article
Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD.
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- Semiconductors, 2019, v. 53, n. 8, p. 1138, doi. 10.1134/S1063782619080037
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Study of the Auger Recombination Energy Threshold in a Series of Waveguide Heterostructures with HgTe/Cd<sub>0.7</sub>Hg<sub>0.3</sub>Te QWs Near 14 μm.
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- Semiconductors, 2019, v. 53, n. 9, p. 1154, doi. 10.1134/S1063782619090264
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- Article
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates.
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- Semiconductors, 2018, v. 52, n. 12, p. 1564, doi. 10.1134/S1063782618120205
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On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates.
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- Semiconductors, 2018, v. 52, n. 12, p. 1547, doi. 10.1134/S1063782618120060
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- Article
Stimulated Emission in the 1.3-1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III-V Heterostructures on Silicon Substrates.
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- Semiconductors, 2018, v. 52, n. 11, p. 1495, doi. 10.1134/S1063782618110143
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Magnetooptics of HgTe/CdTe Quantum Wells with Giant Rashba Splitting in Magnetic Fields up to 34 T.
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- Semiconductors, 2018, v. 52, n. 11, p. 1386, doi. 10.1134/S1063782618110052
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Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells.
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- Semiconductors, 2018, v. 52, n. 11, p. 1375, doi. 10.1134/S1063782618110234
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Lowering the Lasing Threshold by Doping in Mid-Infrared Lasers Based on HgCdTe with HgTe Quantum Wells.
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- Semiconductors, 2018, v. 52, n. 9, p. 1221, doi. 10.1134/S1063782618090038
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Magnetooptical Studies and Stimulated Emission in Narrow Gap HgTe/CdHgTe Structures in the Very Long Wavelength Infrared Range.
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- Semiconductors, 2018, v. 52, n. 4, p. 436, doi. 10.1134/S1063782618040255
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- Article
Impurity resonance states in semiconductors.
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- Semiconductors, 2008, v. 42, n. 8, p. 880, doi. 10.1134/S1063782608080034
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- Article
Exchange enhancement of the g factor in InAs/AlSb heterostructures.
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- Semiconductors, 2008, v. 42, n. 7, p. 828, doi. 10.1134/S1063782608070129
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Efficient generation of the first waveguide mode in the InGaAs/GaAs/InGaP heterolaser.
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- Semiconductors, 2008, v. 42, n. 3, p. 354, doi. 10.1134/S1063782608030214
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- Article
Frequency shift in a system of two laser diodes.
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- Semiconductors, 2007, v. 41, n. 11, p. 1364, doi. 10.1134/S1063782607110176
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- Article
A multifrequency interband two-cascade laser.
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- Semiconductors, 2007, v. 41, n. 10, p. 1209, doi. 10.1134/S1063782607100168
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- Article
Picosecond kinetics of photoexcited carriers in gallium arsenide containing aluminum nanoclusters.
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- Semiconductors, 2007, v. 41, n. 8, p. 909, doi. 10.1134/S1063782607080088
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- Article
Calculation of the States of Shallow Donors in Quantum Wells in a Magnetic Field Using Plane Wave Expansion.
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- Semiconductors, 2005, v. 39, n. 1, p. 54, doi. 10.1134/1.1852645
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- Article
Cyclotron Resonance in Doped and Undoped InAs/AlSb Heterostructures with Quantum Wells.
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- Semiconductors, 2005, v. 39, n. 1, p. 62, doi. 10.1134/1.1852647
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- Article
Terahertz Oscillator Based on Nonlinear Frequency Conversion in a Double Vertical Cavity.
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- Semiconductors, 2005, v. 39, n. 1, p. 113, doi. 10.1134/1.1852658
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Observation of the Middle-Infrared Emission from Semiconductor Lasers Generating Two Frequency Lines in the Near-Infrared Region of the Spectrum.
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- Semiconductors, 2005, v. 39, n. 1, p. 139, doi. 10.1134/1.1852664
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The Mode Competition, Instability, and Second Harmonic Generation in Dual-Frequency InGaAs/GaAs/InGaP Lasers.
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- Semiconductors, 2005, v. 39, n. 1, p. 156, doi. 10.1134/1.1852667
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Nonlinear Frequency Conversion in a Double Vertical-Cavity Surface-Emitting Laser.
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- Semiconductors, 2004, v. 38, n. 11, p. 1350, doi. 10.1134/1.1823073
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- Article
Blue–Green Radiation in GaAs-Based Quantum-Well Lasers.
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- Semiconductors, 2004, v. 38, n. 3, p. 352, doi. 10.1134/1.1682613
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Nonlinear Generation of Far Infrared Mode in Double-Frequency Heterojunction Lasers.
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- Semiconductors, 2004, v. 38, n. 2, p. 239, doi. 10.1134/1.1648385
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Simultaneous generation of TE<sub>0</sub> and TE<sub>1</sub> modes with different wavelengths in a semiconducting laser diode.
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- Technical Physics, 2009, v. 54, n. 11, p. 1711, doi. 10.1134/S1063784209110279
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- Article
Nonlinear Mid-IR Radiation in Two-Frequency Semiconductor Lasers with a Corrugated Waveguide.
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- Technical Physics, 2004, v. 49, n. 11, p. 1486, doi. 10.1134/1.1826195
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Terahertz Oscillator with Vertical Radiation Extraction.
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- Technical Physics, 2004, v. 49, n. 5, p. 592, doi. 10.1134/1.1758334
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- Article
Analysis of Gain and Loss Anisotropy in the Guiding Structure of a Long-Wave Intervalley-Transfer Laser.
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- Technical Physics, 2002, v. 47, n. 6, p. 788, doi. 10.1134/1.1486206
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- Article
GaAsSb/GaAs quantum well growth by MOCVD hydride epitaxy with laser sputtering of antimony.
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- JETP Letters, 1998, v. 68, n. 1, p. 91, doi. 10.1134/1.567826
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Self-organization of germanium nanoislands obtained in silicon by molecular-beam epitaxy.
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- JETP Letters, 1998, v. 67, n. 1, p. 48, doi. 10.1134/1.567626
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- Article
Infrared radiation from hot holes during spatial transport in selectively doped InGaAs/GaAs heterostructures with quantum wells.
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- JETP Letters, 1996, v. 64, n. 7, p. 520, doi. 10.1134/1.567228
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The Use of a Scanning Tunneling Microscope (STM) for Investigation of Local Photoconductivity of Quantum-Dimensional Semiconductor Structures.
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- Technical Physics Letters, 2000, v. 26, n. 1, p. 1, doi. 10.1134/1.1262718
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- Article
Population Inversion between Γ Subbands in Quantum Wells under the Conditions of Γ–L Intervalley Transfer.
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- Semiconductors, 2003, v. 37, n. 2, p. 215, doi. 10.1134/1.1548668
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- Article
Inversion of the Electron Population in Subbands of Dimensional Quantization with Longitudinal Transport in Tunnel-Coupled Quantum Wells.
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- Semiconductors, 2002, v. 36, n. 6, p. 685, doi. 10.1134/1.1485671
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- Article
Difference Mode Generation in Injection Lasers.
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- Semiconductors, 2001, v. 35, n. 10, p. 1203, doi. 10.1134/1.1410665
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- Article
Diagnostics of the Hot-Hole Distribution Function in Quantum Wells in a Strong Electric Field.
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- Semiconductors, 2000, v. 34, n. 9, p. 1073, doi. 10.1134/1.1309426
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- Article
Shallow Acceptors in Strained Ge/Ge[sub 1 – ][sub x]Si[sub x] Heterostructures with Quantum Wells.
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- Semiconductors, 2000, v. 34, n. 5, p. 563, doi. 10.1134/1.1188029
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- Article
Zero-Phonon and Dipole Γ–X Electron Transitions in GaAs/AlAs Quantum-Well Heterostructures in a Longitudinal Electric Field.
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- Semiconductors, 2000, v. 34, n. 5, p. 575, doi. 10.1134/1.1188031
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Determination of the density of states in quantum wells and quantum dot arrays by the capacitance-voltage method.
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- Semiconductors, 1999, v. 33, n. 10, p. 1133, doi. 10.1134/1.1187882
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- Article