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InAsSb Diode Optical Pairs for Real-Time Carbon Dioxide Sensors.
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- Technical Physics, 2018, v. 63, n. 9, p. 1390, doi. 10.1134/S1063784218090025
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- Article
Low temperature deposition of nanocrystalline titanium dioxide from titanium tetraisopropoxide.
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- Russian Journal of General Chemistry, 2010, v. 80, n. 6, p. 1183, doi. 10.1134/S1070363210060228
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- Article
Measurement of the layer thickness on rotating substrates in molecular-beam epitaxy apparatus.
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- Technical Physics, 2009, v. 54, n. 7, p. 1066, doi. 10.1134/S106378420907024X
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- Article
Nanolocalized charge writing in thin SiO<sub>2</sub> layers with embedded silicon nanocrystals under an atomic force microscope probe.
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- Technical Physics Letters, 2007, v. 33, n. 10, p. 889, doi. 10.1134/S1063785007100240
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- Article
Non-Alloy Cr/Au Ohmic Contacts in the Technology of Planar Beam-Lead GaAs p–i–n Diodes.
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- Technical Physics Letters, 2005, v. 31, n. 7, p. 581, doi. 10.1134/1.2001060
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- Article
Relaxer Ferroelectrics as Promising Materials for IR Detectors.
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- Technical Physics, 2004, v. 49, n. 9, p. 1176, doi. 10.1134/1.1800239
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- Article
Axisymmetric Plastic Flow of a Bilayer Material through a Conical Channel.
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- Doklady Physics, 2003, v. 48, n. 5, p. 244, doi. 10.1134/1.1581321
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- Article
Developing the Concept of the Strain Rate Intensity Factor in Plasticity Theory.
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- Doklady Physics, 2003, v. 48, n. 3, p. 131, doi. 10.1134/1.1565618
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- Article
Photoelectric Properties of Isotype and Anisotype Si/GaN:O Heterojunctions.
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- Semiconductors, 2000, v. 34, n. 11, p. 1295, doi. 10.1134/1.1325426
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- Article
Study of GaN:O Films and Related Heterostructures.
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- Semiconductors, 2000, v. 34, n. 3, p. 291, doi. 10.1134/1.1187973
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- Article
Discontinuous velocity fields in a hardening rigid-plastic material.
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- Journal of Applied Mechanics & Technical Physics, 2000, v. 41, n. 1, p. 182, doi. 10.1007/BF02465254
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- Article
Electric and photoelectric properties of n-Gaxln1_xN/p-Si anisotypic heterojunctions
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- Semiconductors, 1998, v. 32, n. 4, p. 412, doi. 10.1134/1.1187407
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- Article