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Topology of PbSnTe:In Layers Versus Indium Concentration.
Published in:
Technical Physics, 2021, v. 66, n. 7, p. 878, doi. 10.1134/S1063784221060086
By:
- Ishchenko, D. V.;
- Akimov, A. N.;
- Akhundov, I. O.;
- Golyashov, V. A.;
- Klimov, A. E.;
- Loginov, A. B.;
- Loginov, B. A.;
- Pashchin, N. S.;
- Tarasov, A. S.;
- Fedosenko, E. V.;
- Sherstyakova, V. N.
Publication type:
Article
Modification of the Surface Properties of PbSnTe〈In〉 Epitaxial Layers with Composition near Band Inversion.
Published in:
Technical Physics, 2019, v. 64, n. 11, p. 1704, doi. 10.1134/S1063784219110264
By:
- Tarasov, A. S.;
- Ishchenko, D. V.;
- Akimov, A. N.;
- Akhundov, I. O.;
- Golyashov, V. A.;
- Klimov, A. E.;
- Pashchin, N. S.;
- Suprun, S. P.;
- Fedosenko, E. V.;
- Sherstyakova, V. N.;
- Tereshchenko, O. E.
Publication type:
Article
Origin of Degradation of the CaF2/BaF2 Buffer Layers on Si(111).
Published in:
Doklady Physics, 2020, v. 65, n. 1, p. 15, doi. 10.1134/S1028335820010103
By:
- Neizvestny, I. G.;
- Ishchenko, D. V.;
- Akhundov, I. O.;
- Suprun, S. P.;
- Tereshchenko, O. E.
Publication type:
Article
Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1325, doi. 10.1134/S1063782620100164
By:
- Klimov, A. E.;
- Akimov, A. N.;
- Akhundov, I. O.;
- Golyashov, V. A.;
- Gorshkov, D. V.;
- Ishchenko, D. V.;
- Matyushenko, E. V.;
- Neizvestny, I. G.;
- Sidorov, G. Yu.;
- Suprun, S. P.;
- Tarasov, A. S.;
- Tereshchenko, O. E.;
- Epov, V.S.
Publication type:
Article
Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime.
Published in:
Semiconductors, 2020, v. 54, n. 8, p. 951, doi. 10.1134/S1063782620080035
By:
- Akimov, A. N.;
- Akhundov, I. O.;
- Ishchenko, D. V.;
- Klimov, A. E.;
- Neizvestny, I. G.;
- Paschin, N. S.;
- Suprun, S. P.;
- Tarasov, A. S.;
- Tereshchenko, O. E.;
- Fedosenko, E. V.;
- Sherstyakova, V. N.
Publication type:
Article
Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion.
Published in:
Semiconductors, 2019, v. 53, n. 9, p. 1182, doi. 10.1134/S1063782619090094
By:
- Klimov, A. E.;
- Akimov, A. N.;
- Akhundov, I. O.;
- Golyashov, V. A.;
- Gorshkov, D. V.;
- Ishchenko, D. V.;
- Sidorov, G. Yu.;
- Suprun, S. P.;
- Tarasov, A. S.;
- Epov, V. S.;
- Tereshchenko, O. E.
Publication type:
Article
Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation.
Published in:
Semiconductors, 2018, v. 52, n. 5, p. 618, doi. 10.1134/S1063782618050147
By:
- Kazantsev, D. M.;
- Akhundov, I. O.;
- Alperovich, V. L.;
- Shwartz, N. L.;
- Kozhukhov, A. S.;
- Latyshev, A. V.
Publication type:
Article
Two-Dimensional Pyroelectric Material with Heat-Transfer Modulation.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2024, v. 18, n. 3, p. 536, doi. 10.1134/S102745102470006X
By:
- Pugachev, A. M.;
- Sokolov, A. A.;
- Akhundov, I. O.;
- Protasevich, N. V.
Publication type:
Article

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