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Properties of Iodine-Doped CdTe Layers on (211) Si Grown at High Substrate Temperatures by MOVPE.
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- Journal of Electronic Materials, 2020, v. 49, n. 11, p. 6996, doi. 10.1007/s11664-020-08420-3
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- Article
Metalorganic Vapor Phase Epitaxy of Thick and Uniform Single Crystal CdTe Epitaxial Layers on (211) Si Substrates for X-ray Imaging Detector Development.
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- Journal of Electronic Materials, 2019, v. 48, n. 12, p. 7680, doi. 10.1007/s11664-019-07601-z
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- Article
DUCTAL SHUNTING DURING FIRST 72 HRS IN TERM NEONATES.
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- Journal of Perinatal Medicine, 1991, v. 19, p. 271
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- Article
Doppler Assessment of Ductal Shunting in the Premature Infants before and after Pharmacological Closure.
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- Journal of Perinatal Medicine, 1991, v. 19, p. 86
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- Article
Characterization of (211) and (100) CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy.
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- Journal of Electronic Materials, 2017, v. 46, n. 11, p. 6704, doi. 10.1007/s11664-017-5703-6
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- Article
Dry Etching Characteristics of MOVPE-Grown CdTe Epilayers in CH, H, Ar ECR Plasmas.
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- Journal of Electronic Materials, 2017, v. 46, n. 9, p. 5400, doi. 10.1007/s11664-017-5528-3
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- Article
Development of Nuclear Radiation Detectors by Use of Thick Single-Crystal CdTe Layers Grown on (211) p-Si Substrates by MOVPE.
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- Journal of Electronic Materials, 2014, v. 43, n. 8, p. 2860, doi. 10.1007/s11664-014-3132-3
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- Article
Postgrowth Annealing of CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy.
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- Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3125, doi. 10.1007/s11664-013-2680-2
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- Article
Dark Current Characteristics of a Radiation Detector Array Developed Using MOVPE-Grown Thick CdTe Layers on Si Substrate.
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- Journal of Electronic Materials, 2012, v. 41, n. 10, p. 2754, doi. 10.1007/s11664-012-2121-7
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- Article
Electrical Properties of Halogen-Doped CdTe Layers on Si Substrates Grown by Metalorganic Vapor-Phase Epitaxy.
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- Journal of Electronic Materials, 2010, v. 39, n. 7, p. 1118, doi. 10.1007/s11664-010-1241-1
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- Article
Fabrication and Characterization of MOVPE-Grown CdTe-on-Si Heterojunction Diode-Type Gamma-Ray Detectors.
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- Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1391, doi. 10.1007/s11664-008-0430-7
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- Article
Excimer Laser Etching Process of CdTe Crystals for Formation of Deep Vertical Trenches.
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- Journal of Electronic Materials, 2007, v. 36, n. 8, p. 837, doi. 10.1007/s11664-007-0105-9
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- Article
Direct Growth of High-Quality Thick CdTe Epilayers on Si (211) Substrates by Metalorganic Vapor Phase Epitaxy for Nuclear Radiation Detection and Imaging.
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- Journal of Electronic Materials, 2006, v. 35, n. 6, p. 1257, doi. 10.1007/s11664-006-0251-5
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- Article
Development of Nuclear Radiation Detectors Based on Epitaxially Grown Thick CdTe Layers on n<sup>+</sup>-GaAs Substrates.
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- Journal of Electronic Materials, 2005, v. 34, n. 6, p. 815, doi. 10.1007/s11664-005-0026-4
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- Article
Growth of Thick CdTe Epilayers on GaAs Substrates and Evaluation of CdTe/n<sup>+</sup> -GaAs Heterojunction Diodes for an X-ray Imaging Detector.
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- Journal of Electronic Materials, 2004, v. 33, n. 6, p. 645, doi. 10.1007/s11664-004-0060-7
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- Article