Found: 15
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Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors.
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- Journal of Electronic Materials, 2008, v. 37, n. 5, p. 550, doi. 10.1007/s11664-007-0298-y
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- Article
Thermal Stability of Nitride-Based Diffusion Barriers for Ohmic Contacts to n-GaN.
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- Journal of Electronic Materials, 2007, v. 36, n. 12, p. 1662, doi. 10.1007/s11664-007-0277-3
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- Article
Band Offsets in the Mg<sub>0.5</sub>Ca<sub>0.5</sub>O/GaN Heterostructure System.
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- Journal of Electronic Materials, 2007, v. 36, n. 4, p. 368, doi. 10.1007/s11664-006-0037-9
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- Article
Effect of Proton Irradiation on Interface State Density in Sc<sub>2</sub>O<sub>3</sub>/GaN and Sc<sub>2</sub>O<sub>3</sub>/MgO/GaN Diodes.
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- Journal of Electronic Materials, 2007, v. 36, n. 4, p. 519, doi. 10.1007/s11664-006-0035-y
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- Article
Annealing and Measurement Temperature Dependence of W<sub>2</sub>B- and W<sub>2</sub>B<sub>2</sub>-Based Rectifying Contacts to p-GaN.
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- Journal of Electronic Materials, 2007, v. 36, n. 4, p. 384, doi. 10.1007/s11664-006-0054-8
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- Article
Effect of Si Co Doping on Ferromagnetic Properties of GaGdN.
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- Journal of Electronic Materials, 2007, v. 36, n. 4, p. 391, doi. 10.1007/s11664-006-0040-1
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- Article
Selective Dry Etching of (Sc<sub>2</sub>O<sub>3</sub>)<sub>x</sub>(Ga<sub>2</sub>O<sub>3</sub>)<sub>1-x</sub> Gate Dielectrics and Surface Passivation Films on GaN.
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- Journal of Electronic Materials, 2006, v. 35, n. 4, p. 680, doi. 10.1007/s11664-006-0120-2
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- Article
Si-Diffused GaN for Enhancement-Mode GaN MOSFET on Si Applications.
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- Journal of Electronic Materials, 2006, v. 35, n. 4, p. 685, doi. 10.1007/s11664-006-0121-1
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- Article
AIN-Based Dilute Magnetic Semiconductors.
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- Journal of Electronic Materials, 2005, v. 34, n. 4, p. 365, doi. 10.1007/s11664-005-0112-7
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- Article
Proton Irradiation of ZnO Schottky Diodes.
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- Journal of Electronic Materials, 2005, v. 34, n. 4, p. 395, doi. 10.1007/s11664-005-0117-2
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- Article
Optical and Electrical Characterization of (Ga,Mn)N/InGaN Multiquantum Well Light-Emitting Diodes.
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- Journal of Electronic Materials, 2004, v. 33, n. 5, p. 467, doi. 10.1007/s11664-004-0204-9
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- Article
Lateral Schottky GaN Rectifiers Formed by Si<sup>+</sup> Ion Implantation.
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- Journal of Electronic Materials, 2004, v. 33, n. 5, p. 426, doi. 10.1007/s11664-004-0196-5
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- Article
Optical and Electrical Properties of AIGaN Films Implanted with Mn, Co, or Cr.
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- Journal of Electronic Materials, 2004, v. 33, n. 5, p. 384, doi. 10.1007/s11664-004-0188-5
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- Article
Electrical and Luminescent Properties and the Spectra of Deep Centers in GaMnN/InGaN Light-Emitting Diodes.
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- Journal of Electronic Materials, 2004, v. 33, n. 3, p. 241, doi. 10.1007/s11664-004-0186-7
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- Article
Detection of CO using bulk ZnO Schottky rectifiers.
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- Applied Physics A: Materials Science & Processing, 2005, v. 80, n. 2, p. 259, doi. 10.1007/s00339-004-2666-2
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- Article