TRANSIENT PHASE CHANGE ANALYSIS OF SCALING IN PHASE CHANGE DEVICES.
- Published in:
- International Journal of Nanoscience, 2010, v. 9, n. 4, p. 351, doi. 10.1142/S0219581X10006946
- By:
- Publication type:
- Article
Works matching AU ADESIDA, ILESANMI
Results: 5
1
2
Elevated-Temperature Annealing Effects on AlGaN/GaN Heterostructures.
- Published in:
- Journal of Electronic Materials, 2011, v. 40, n. 12, p. 2344, doi. 10.1007/s11664-011-1791-x
- By:
- Publication type:
- Article
3
Low resistance Mo/Al/Mo/Au ohmic contact scheme to InAlN/AlN/GaN heterostructure.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 7, p. 1538, doi. 10.1002/pssa.201001096
- By:
- Publication type:
- Article
4
Printed Arrays of Aligned GaAs Wires for Flexible Transistors, Diodes, and Circuits on Plastic Substrates.
- Published in:
- Small, 2006, v. 2, n. 11, p. 1330, doi. 10.1002/smll.200500528
- By:
- Publication type:
- Article
5
Transfer printing by kinetic control of adhesion to an elastomeric stamp.
- Published in:
- 2006
- By:
- Publication type:
- Letter