GaN HEMT 栅偏置电压与反向传导电压的 解耦合研究.
- Published in:
- Electronic Components & Materials, 2024, v. 43, n. 3, p. 264, doi. 10.14106/j.cnki.1001-2028.2024.1455
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- Publication type:
- Article
Works by 郑有炓
Results: 4
1
2
高均匀性 6 英寸 GaN 厚膜的高速率 HVPE 生长研究.
- Published in:
- Journal of Synthetic Crystals, 2025, v. 54, n. 1, p. 11, doi. 10.16553/j.cnki.issn1000-985x.2024.0227
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- Publication type:
- Article
3
金属调制分子束外延生长氮化铝薄膜.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 878
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- Publication type:
- Article
4
分子束外延高 Al 组分 AlGaN 薄膜及 Si 掺杂研究.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 783
- By:
- Publication type:
- Article