低浓度 CeO<sub>2</sub> / SiO<sub>2</sub> 复合磨料对硅片 CMP 性能的影响.
- Published in:
- Electronic Components & Materials, 2024, v. 43, n. 10, p. 1227, doi. 10.14106/j.cnki.1001-2028.2023.0066
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- Publication type:
- Article
Works by 王辰伟
Results: 20
1
2
工艺参数对阻挡层CMP 后互连线厚度一致性的影响.
- Published in:
- Electronic Components & Materials, 2023, v. 42, n. 11, p. 1370, doi. 10.14106/j.cnki.1001-2028.2023.0324
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- Publication type:
- Article
3
钌基阻挡层铜膜CMP 中E1310P 的缓蚀机理研究.
- Published in:
- Electronic Components & Materials, 2023, v. 42, n. 11, p. 1362, doi. 10.14106/j.cnki.1001-2028.2023.0387
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- Publication type:
- Article
4
咪唑对钴互连化学机械抛光的影响.
- Published in:
- Electronic Components & Materials, 2023, v. 42, n. 7, p. 888, doi. 10.14106/j.cnki.1001-2028.2023.1689
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- Publication type:
- Article
5
不同表面活性剂对浅沟槽隔离CMP 中SiO<sub>2</sub> 与Si<sub>3</sub> N<sub>4</sub> 速率选择性的影响.
- Published in:
- Electronic Components & Materials, 2023, v. 42, n. 5, p. 578, doi. 10.14106/j.cnki.1001-2028.2023.1635
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- Publication type:
- Article
6
新型抑制剂对铜膜 CMP 后碟形坑与蚀坑的影响.
- Published in:
- Electronic Components & Materials, 2022, v. 41, n. 12, p. 1367, doi. 10.14106/j.cnki.1001-2028.2022.0516
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- Publication type:
- Article
7
不同表面活性剂对铜互连阻挡层 CMP 一致性的影响.
- Published in:
- Electronic Components & Materials, 2022, v. 41, n. 10, p. 1108, doi. 10.14106/j.cnki.1001-2028.2022.0140
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- Publication type:
- Article
8
超滤和活性剂协同作用对铜阻挡层CMP 后缺陷的 控制机理研究.
- Published in:
- Electronic Components & Materials, 2022, v. 41, n. 4, p. 392, doi. 10.14106/j.cnki.1001-2028.2022.1631
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- Publication type:
- Article
9
抛光液添加剂协同作用对铜互连阻挡层 CMP 后 碟形坑及蚀坑的影响.
- Published in:
- Electronic Components & Materials, 2021, v. 40, n. 8, p. 808, doi. 10.14106/j.cnki.1001-2028.2021.0065
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- Publication type:
- Article
10
烷基糖苷对硅片化学机械抛光腐蚀缺陷的影响.
- Published in:
- Micronanoelectronic Technology, 2024, v. 61, n. 11, p. 1, doi. 10.13250/j.cnki.wndz.24110502
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- Publication type:
- Article
11
单烷基磷酸酯钾盐和烷基糖苷对钴互连化学机械抛光的影响.
- Published in:
- Electroplating & Finishing, 2024, v. 43, n. 4, p. 47, doi. 10.19289/j.1004-227x.2024.04.007
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- Publication type:
- Article
12
4−羟基苯甲酸对 DSTI 化学机械抛光 SiO<sub>2</sub> /Si<sub>3</sub>N<sub>4</sub> 去除选择性的 影响.
- Published in:
- Electroplating & Finishing, 2023, v. 42, n. 13, p. 75, doi. 10.19289/j.1004-227x.2023.13.011
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- Publication type:
- Article
13
工艺参数对GLSI 铜互连阻挡层CMP 抛光效果的影响.
- Published in:
- Electroplating & Finishing, 2023, v. 42, n. 1, p. 46, doi. 10.19289/j.1004-227x.2023.01.009
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- Publication type:
- Article
14
不同粒径SiO<sub>2</sub> 磨料混合对钴化学机械抛光的影响.
- Published in:
- Electroplating & Finishing, 2022, v. 41, n. 23, p. 1695, doi. 10.19289/j.1004-227x.2022.23.009
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- Publication type:
- Article
15
聚乙二醇对浅沟槽隔离中 SiO<sub>2</sub>和 Si<sub>3</sub>N<sub>4</sub>化学机械抛光速率 选择性的影响.
- Published in:
- Electroplating & Finishing, 2022, v. 41, n. 21, p. 1546, doi. 10.19289/j.1004-227x.2022.21.011
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- Publication type:
- Article
16
抛光液组分对3D 微同轴中铜和光刻胶 化学机械抛光速率选择性的影响.
- Published in:
- Electroplating & Finishing, 2022, v. 41, n. 7, p. 486, doi. 10.19289/j.1004-227x.2022.07.007
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- Publication type:
- Article
17
二乙烯三胺对硅片化学机械抛光速率的影响.
- Published in:
- Lubrication Engineering (0254-0150), 2025, v. 50, n. 1, p. 138, doi. 10.3969/j.issn.0254-0150.2025.01.018
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- Publication type:
- Article
18
聚二烯丙基二甲基氯化钱对鹄和SiO2去除速率选择性的影响.
- Published in:
- Lubrication Engineering (0254-0150), 2024, v. 49, n. 11, p. 102, doi. 10.3969/j.issn.0254-0150.2024.11.013
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- Publication type:
- Article
19
单烷基磷酸酯钾盐抑制剂对 Co 互连化学机械抛光的影响.
- Published in:
- Lubrication Engineering (0254-0150), 2024, v. 49, n. 10, p. 84, doi. 10.3969/j.issn.0254-0150.2024.10.011
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- Publication type:
- Article
20
复合磨料的制备及其对层间介质CMR性能的影响.
- Published in:
- Semiconductor Technology / Bandaoti Jishu, 2024, v. 49, n. 4, p. 323, doi. 10.13290/j.cnki.bdtjs.2024.04.004
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- Publication type:
- Article