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Composition and electrical properties of ultra-thin SiO<sub>x</sub>N<sub>y</sub> layers formed by rf plasma nitrogen implantation/plasma oxidation processes.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 9, doi. 10.26636/jtit.2007.3.820
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- Article
Applying shallow nitrogen implantation from rf plasma for dual gate oxide technology.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 3, doi. 10.26636/jtit.2007.3.819
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- Article
The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 25, doi. 10.26636/jtit.2007.3.823
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- Article
Comparison of composition ultra-thin silicon oxynitride layers' fabricated by PECVD and ultrashallow rf plasma ion implantation.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 20, doi. 10.26636/jtit.2007.3.822
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- Article
The influence of annealing (900°C) of ultra-thin PECVD silicon oxynitride layers.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 16, doi. 10.26636/jtit.2007.3.821
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- Article