Found: 17
Select item for more details and to access through your institution.
Simplified seismic scenario analysis of existing masonry buildings accounting for local site effects.
- Published in:
- Frontiers of Structural & Civil Engineering, 2024, v. 18, n. 2, p. 309, doi. 10.1007/s11709-024-0982-5
- By:
- Publication type:
- Article
Defect Research of InGaN Based on Blue LED Structures Using Reciprocal Space Mapping.
- Published in:
- Gazi University Journal of Science, 2015, v. 28, n. 3, p. 365
- By:
- Publication type:
- Article
The Effect of Growth Conditions on The Optical and Structural Properties of InGaN/GaN MQW LED Structures Grown by MOCVD.
- Published in:
- Gazi University Journal of Science, 2014, v. 27, n. 4, p. 1105
- By:
- Publication type:
- Article
Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 2, p. 185, doi. 10.1007/s10854-009-9891-6
- By:
- Publication type:
- Article
Characterization of AlInN/AlN/GaN Heterostructures with Different AlN Buffer Thickness.
- Published in:
- Journal of Electronic Materials, 2016, v. 45, n. 7, p. 3278, doi. 10.1007/s11664-016-4536-z
- By:
- Publication type:
- Article
On the elastic properties of INGAN/GAN LED structures.
- Published in:
- Applied Physics A: Materials Science & Processing, 2019, v. 125, n. 2, p. 1, doi. 10.1007/s00339-019-2402-6
- By:
- Publication type:
- Article
Microstructural properties of InGaN/GaN light-emitting diode structures with different In content grown by MOCVD.
- Published in:
- Applied Physics A: Materials Science & Processing, 2014, v. 114, n. 4, p. 1215, doi. 10.1007/s00339-013-7857-2
- By:
- Publication type:
- Article
Energy relaxations of hot electrons in AlGaN/AlN/GaN heterostructures grown by MOCVD on sapphire and 6H-SiC substrates.
- Published in:
- European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011110218
- By:
- Publication type:
- Article
Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs.
- Published in:
- Semiconductors, 2013, v. 47, n. 6, p. 820, doi. 10.1134/S1063782613060080
- By:
- Publication type:
- Article
Structural investigation of AlInN/AlN/GaN heterostructures.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 3, p. 2852, doi. 10.1007/s10854-015-4101-1
- By:
- Publication type:
- Article
Microstructural defect properties of InGaN/GaN blue light emitting diode structures.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 9, p. 3924, doi. 10.1007/s10854-014-2108-7
- By:
- Publication type:
- Article
Indium rich InGaN solar cells grown by MOCVD.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3652, doi. 10.1007/s10854-014-2070-4
- By:
- Publication type:
- Article
Cu Doping Induced Structural and Optical Properties of Bimetallic Oxide Nanodots by the Vertical Spark Generation.
- Published in:
- Acta Physica Polonica: A, 2019, v. 135, n. 5, p. 857, doi. 10.12693/APhysPolA.135.857
- By:
- Publication type:
- Article
Investigation of Properties of Engineered Cementitious Composites Incorporating High Volumes of Fly Ash and Metakaolin.
- Published in:
- ACI Materials Journal, 2012, v. 109, n. 5, p. 565, doi. 10.14359/51684088
- By:
- Publication type:
- Article
Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD.
- Published in:
- Journal of Materials Science, 2011, v. 46, n. 6, p. 1606, doi. 10.1007/s10853-010-4973-7
- By:
- Publication type:
- Article
Strain analysis of InGaN/GaN multi quantum well LED structures.
- Published in:
- Crystal Research & Technology, 2012, v. 47, n. 8, p. 824, doi. 10.1002/crat.201100222
- By:
- Publication type:
- Article
Strain-Stress Analysis of AlGaN/GaN Heterostructures With and Without an AlN Buffer and Interlayer.
- Published in:
- Strain, 2011, v. 47, p. 19, doi. 10.1111/j.1475-1305.2009.00730.x
- By:
- Publication type:
- Article