Works matching Transistor design

Results: 671

Toward High-Output Organic Vertical Field Effect Transistors: Key Design Parameters.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 38, p. 6888, doi. 10.1002/adfm.201601956

By:

Kwon, Hyukyun;
Kim, Mincheol;
Cho, Hyunsu;
Moon, Hanul;
Lee, Jongjin;
Yoo, Seunghyup

Publication type:

Article

Quantum Thermal Rectification to Design Thermal Diodes and Transistors.

Published in:

Zeitschrift für Naturforschung Section A: A Journal of Physical Sciences, 2017, v. 72, n. 2, p. 163, doi. 10.1515/zna-2016-0350

By:

Joulain, Karl;
Ezzahri, Younès;
Ordonez-Miranda, Jose

Publication type:

Article

Ultra‐low power pass‐transistor‐logic‐based delay line design for sub‐threshold applications.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 23, p. 1910, doi. 10.1049/el.2016.3240

By:

Tadros, R.N.;
Dasari, N.;
Beerel, P.A.

Publication type:

Article

Systematic design methodology for robust genetic transistors based on I/O specifications via promoter- RBS libraries.

Published in:

BMC Systems Biology, 2013, v. 7, n. 1, p. 2, doi. 10.1186/1752-0509-7-109

By:

Yi-Ying Lee;
Chih-Yuan Hsu;
Ling-Jiun Lin;
Chih-Chun Chang;
Hsiao-Chun Cheng;
Tsung-Hsien Yeh;
Rei-Hsing Hu;
Che Lin;
Zhen Xie;
Bor-Sen Chen

Publication type:

Article

Design Optimization of Transistors Used for Neural Recording.

Published in:

Active & Passive Electronic Components, 2012, p. 1, doi. 10.1155/2012/472306

By:

Basham, Eric;
Parent, David

Publication type:

Article

Design and Optimization of Novel Shaped FinFET.

Published in:

Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2019, v. 44, n. 4, p. 3101, doi. 10.1007/s13369-018-3428-3

By:

Kaur, Navneet;
Rattan, Munish;
Gill, Sandeep Singh

Publication type:

Article

Mejoras del proceso de diseño en la industria de transistores de microondas.

Published in:

Revista Facultad de Ingeniería - UPTC, 2019, v. 28, n. 52, p. 99, doi. 10.19053/01211129.v28.n52.2019.9784

By:

Rafael-Valdivia, Guillermo

Publication type:

Article

Observer design of singular systems (transistor circuits) using the RK-Butcher algorithms.

Published in:

International Journal of Computer Mathematics, 2005, v. 82, n. 1, p. 111, doi. 10.1080/00207160412331291026

By:

Park, J. Y.;
Murugesan ‡, K.;
Evans, D. J.;
Sekar, S.;
Murugesh, V.

Publication type:

Article

Simulator acceleration and inverse design of fin field-effect transistors using machine learning.

Published in:

Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-05111-3

By:

Kim, Insoo;
Park, So Jeong;
Jeong, Changwook;
Shim, Munbo;
Kim, Dae Sin;
Kim, Gyu-Tae;
Seok, Junhee

Publication type:

Article

High-Data-Rate Modulators Based on Graphene Transistors: Device Circuit Co-Design Proposals †.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 20, p. 4022, doi. 10.3390/electronics13204022

By:

Pacheco-Sanchez, Anibal;
Ramos-Silva, J. Noé;
Mavredakis, Nikolaos;
Ramírez-García, Eloy;
Jiménez, David

Publication type:

Article

A Silicon-Compatible Synaptic Transistor Capable of Multiple Synaptic Weights toward Energy-Efficient Neuromorphic Systems.

Published in:

Electronics (2079-9292), 2019, v. 8, n. 10, p. 1102, doi. 10.3390/electronics8101102

By:

Yu, Eunseon;
Cho, Seongjae;
Park, Byung-Gook

Publication type:

Article

Optimum Design of Organic Electrochemical Type Transistors for Applications in Biochemical Sensing.

Published in:

Journal of Sensors, 2008, p. 1, doi. 10.1155/2008/702161

By:

Badhwar, Shruti;
Narayan, K. S.

Publication type:

Article

Fault tolerant architecture design using quad‐gate‐transistor redundancy.

Published in:

IET Circuits, Devices & Systems (Wiley-Blackwell), 2015, v. 9, n. 3, p. 152, doi. 10.1049/iet-cds.2014.0106

By:

Mukherjee, Atin;
Dhar, Anindya Sundar

Publication type:

Article

Study of selective isotropic etching Si1−xGex in process of nanowire transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 1, p. 134, doi. 10.1007/s10854-019-02269-x

By:

Li, Junjie;
Wang, Wenwu;
Li, Yongliang;
Zhou, Na;
Wang, Guilei;
Kong, Zhenzhen;
Fu, Jianyu;
Yin, Xiaogen;
Li, Chen;
Wang, Xiaolei;
Yang, Hong;
Ma, Xueli;
Han, Jianghao;
Zhang, Jing;
Wei, Yijun;
Hu, Tairan;
Yang, Tao;
Li, Junfeng;
Yin, Huaxiang;
Zhu, Huilong

Publication type:

Article

Trojan Detection Test for Clockless Circuits.

Published in:

Journal of Electronic Testing, 2020, v. 36, n. 1, p. 23, doi. 10.1007/s10836-020-05857-6

By:

Guazzelli, Ricardo Aquino;
Trindade, Matheus Garay;
Guimarães, Leonel Acunha;
de Paiva Leite, Thiago Ferreira;
Fesquet, Laurent;
Bastos, Rodrigo Possamai

Publication type:

Article

A Wideband Extended-Dynamic-Range Successive Detection Logarithmic Amplifier Based on 0.15 μm GaAs pHEMT Technology.

Published in:

Journal of Circuits, Systems & Computers, 2019, v. 28, n. 4, p. N.PAG, doi. 10.1142/S0218126619500695

By:

Javadifar, Nader;
Dousti, Massoud;
Hajghassem, Hassan

Publication type:

Article

ANALYSIS OF A NOVEL FULL ADDER DESIGNED FOR IMPLEMENTING IN CARBONE NANOTUBE TECHNOLOGY.

Published in:

Journal of Circuits, Systems & Computers, 2012, v. 21, n. 5, p. -1, doi. 10.1142/S0218126612500429

By:

GHADIRY, MAHDIAR;
NADI, MAHDIEH;
MOHAMMADI, HOSEIN;
BIN ABD MANAF, ASRULNIZAM

Publication type:

Article

The FinFET Breakthrough and Networks of Innovation in the Semiconductor Industry, 1980–2005: Applying Digital Tools to the History of Technology.

Published in:

Technology & Culture, 2018, v. 59, n. 2, p. 251, doi. 10.1353/tech.2018.0029

By:

O'Reagan, Douglas;
Fleming, Lee

Publication type:

Article

Organic Electronics: Toward High-Output Organic Vertical Field Effect Transistors: Key Design Parameters (Adv. Funct. Mater. 38/2016).

Published in:

Advanced Functional Materials, 2016, v. 26, n. 38, p. 7023, doi. 10.1002/adfm.201670252

By:

Kwon, Hyukyun;
Kim, Mincheol;
Cho, Hyunsu;
Moon, Hanul;
Lee, Jongjin;
Yoo, Seunghyup

Publication type:

Article

Design of microwave transistor amplifiers with optimum cascaded gain and noise.

Published in:

IET Microwaves, Antennas & Propagation (Wiley-Blackwell), 2016, v. 10, n. 11, p. 1196, doi. 10.1049/iet-map.2015.0803

By:

Corral, Celestino A.

Publication type:

Article

Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11).

Published in:

Electronics (2079-9292), 2019, v. 8, n. 6, p. 645, doi. 10.3390/electronics8060645

By:

Patil, Prasanna D.;
Ghosh, Sujoy;
Wasala, Milinda;
Lei, Sidong;
Vajtai, Robert;
Ajayan, Pulickel M.;
Talapatra, Saikat

Publication type:

Article

A course on thin-film transistor circuit design for modern displays.

Published in:

Journal of the Society for Information Display, 2014, v. 22, n. 6, p. 281, doi. 10.1002/jsid.239

By:

Guo, Xiaojun;
Wang, Yanwei;
Chen, Li

Publication type:

Article

Leakage Power Reduction in Read and Write Enhanced Macro Memory Circuit Design Using Transistor Stacking and Reversible Approach.

Published in:

Advances in Systems Science & Applications, 2022, v. 22, n. 1, p. 130

By:

Rani, Mucherla Usha;
N., Siva Sankara Reddy;
B., Rajendra Naik

Publication type:

Article

Reducing Leakage Power for SRAM Design Using Sleep Transistor.

Published in:

Acta Physica Polonica: A, 2013, v. 123, n. 2, p. 185, doi. 10.12693/APhysPolA.123.185

By:

KHANDELWAL, S.;
AKASHE, S.;
SHARMA, S.

Publication type:

Article

Design of a 10 W high‐efficiency balanced power amplifier using a combination of load‐pull and load‐line methods for ISM band.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2020, v. 30, n. 1, p. N.PAG, doi. 10.1002/mmce.21984

By:

Mehraban, Haniye;
Farazmand, Amir A.;
Ahmadi, Arash

Publication type:

Article

Correction to: Hybrid MoS2-Plamonic Absorber Covering the Whole Visible Spectrum: Application to Design Transistor Like Photodetectors.

Published in:

2024

By:

Tavakkoli, Mina;
Soofi, Hadi;
Sheibaei, Vahid

Publication type:

Correction Notice

Design of Linear SiGe IC Downconverters.

Published in:

Microwave Journal, 2013, v. 56, n. 3, p. 78

By:

KRISHNAMURTHI, KATHIRAVAN;
ZHIYANG LIU;
GRESHAM, IAN

Publication type:

Article

Compact Transistor Models: The: Roadmap to First- Pass Amplifier Design Success.

Published in:

Microwave Journal, 2012, v. 55, n. 3, p. 74

By:

Gasseling, Tony

Publication type:

Article

RF and Microwave Transistor Oscillator Design.

Published in:: 2008
Publication type:: Book Review

Hybrid CMOS: Single-Electron-Transistor Device and Circuit Design.

Published in:: 2007
Publication type:: Book Review

Design of a transistor‐based broadband high‐efficiency class‐F−1 rectifier.

Published in:

International Journal of Circuit Theory & Applications, 2025, v. 53, n. 2, p. 595, doi. 10.1002/cta.4145

By:

Zhang, Zhiwei;
Gu, Chao;
Xuan, Xuefei;
Zhang, Luyu;
Wang, Chenlu

Publication type:

Article

Minimal two-transistor multifunction filter design.

Published in:

International Journal of Circuit Theory & Applications, 2017, v. 45, n. 11, p. 1449, doi. 10.1002/cta.2319

By:

Maundy, Brent J.;
Elwakil, Ahmed S.;
Ozoguz, Serdar;
Yildiz, Hacer A.

Publication type:

Article

Modern Microwave Transistors--Theory, Design and Performance (Book).

Published in:: 2003
Publication type:: Book Review

THEORETICAL STUDY OF MICROWAVE TRANSISTOR AMPLIFIER DESIGN IN THE CONJUGATELY CHARACTERISTIC-IMPEDANCE TRANSMISSION LINE (CCITL) SYSTEM USING A BILINEAR TRANSFORMATION APPROACH.

Published in:

Progress in Electromagnetics Research, 2011, v. 120, p. 309, doi. 10.2528/pier11080504

By:

Silapunt, R.;
Torrungrueng, D.

Publication type:

Article

EMERGING TECHNOLOGY.

Published in:: Advanced Materials & Processes, 2010, v. 168, n. 2, p. 8
Publication type:: Article

Non-Lithographic Fabrication of All-2D α-MoTe2 Dual Gate Transistors.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 18, p. 3146, doi. 10.1002/adfm.201505346

By:

Choi, Kyunghee;
Lee, Young Tack;
Kim, Jin Sung;
Min, Sung‐Wook;
Cho, Youngsuk;
Pezeshki, Atiye;
Hwang, Do Kyung;
Im, Seongil

Publication type:

Article

MoS2 Tribotronic Transistor for Smart Tactile Switch.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 13, p. 2104, doi. 10.1002/adfm.201504485

By:

Xue, Fei;
Chen, Libo;
Wang, Longfei;
Pang, Yaokun;
Chen, Jian;
Zhang, Chi;
Wang, Zhong Lin

Publication type:

Article

High-κ dielectrics and advanced channel concepts for Si MOSFET.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 10, p. 915, doi. 10.1007/s10854-008-9713-2

By:

Wu, Mo;
Alivov, Y. I.;
Morkoç, Hadis

Publication type:

Article

The Effect of the Circuit Connection on the Characteristic of a Three-Collector Magnetotransistor.

Published in:

Measurement Techniques, 2013, v. 56, n. 3, p. 309, doi. 10.1007/s11018-013-0201-6

By:

Amelichev, V.;
Tikhonov, R.;
Cheremisinov, A.

Publication type:

Article

Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 3, p. 653, doi. 10.3390/electronics13030653

By:

Lv, Beibei;
Zhang, Lixing;
Mo, Jiongjiong

Publication type:

Article

Study on Characteristics of Enhancement-Mode Gallium-Nitride High-Electron-Mobility Transistor for the Design of Gate Drivers.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 10, p. 1573, doi. 10.3390/electronics9101573

By:

Tang, Sheng-Yi

Publication type:

Article

Protein Assays on Organic Electronics: Rational Device and Material Designs for Organic Transistor‐Based Sensors.

Published in:

ChemistryOpen, 2020, v. 9, n. 5, p. 573, doi. 10.1002/open.202000025

By:

Minamiki, Tsukuru;
Kubota, Riku;
Sasaki, Yui;
Asano, Koichiro;
Minami, Tsuyoshi

Publication type:

Article

Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design.

Published in:

Journal of Nanotechnology, 2020, p. 1, doi. 10.1155/2020/7608279

By:

Natarajamoorthy, Mathan;
Subbiah, Jayashri;
Alias, Nurul Ezaila;
Tan, Michael Loong Peng

Publication type:

Article

Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design.

Published in:

Journal of Nanotechnology, 2020, p. 1, doi. 10.1155/2020/7608279

By:

Natarajamoorthy, Mathan;
Subbiah, Jayashri;
Alias, Nurul Ezaila;
Tan, Michael Loong Peng

Publication type:

Article

Three-leg molecular transistors as molecular logic circuits: Design and modeling.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2018, v. 32, n. 22, p. N.PAG, doi. 10.1142/S021797921850234X

By:

Shokri, Aliasghar;
Safapour, Saleh;
Sabbaghi-Nadooshan, Reza

Publication type:

Article

Low power radiation aware transistor level design using tri‐state inverter embedded non‐clock gating technique.

Published in:

IET Circuits, Devices & Systems (Wiley-Blackwell), 2019, v. 13, n. 7, p. 1063, doi. 10.1049/iet-cds.2018.5232

By:

Kamalakannan, Ramaian Subramanian;
Venkatachalam, Kuppusamy

Publication type:

Article

Effects of asymmetric underlap spacers on nanoscale junctionless transistors and design of optimised CMOS amplifiers.

Published in:

IET Circuits, Devices & Systems (Wiley-Blackwell), 2019, v. 13, n. 4, p. 510, doi. 10.1049/iet-cds.2018.5557

By:

Roy, Debapriya;
Biswas, Abhijit

Publication type:

Article

Hybrid AlGaN/GaN high‐electron mobility transistor: design and simulation.

Published in:

IET Circuits, Devices & Systems (Wiley-Blackwell), 2018, v. 12, n. 1, p. 33, doi. 10.1049/iet-cds.2017.0025

By:

Verma, Sumit;
Loan, Sajad A.;
Alamoud, Abdulrahman M.;
Alharbi, Abdullah G.

Publication type:

Article

Reliability enhancement of a steep slope tunnel transistor based ring oscillator designs with circuit interaction.

Published in:

IET Circuits, Devices & Systems (Wiley-Blackwell), 2016, v. 10, n. 6, p. 522, doi. 10.1049/iet-cds.2016.0262

By:

Japa, Aditya;
Vallabhaneni, Harshita;
Vaddi, Ramesh

Publication type:

Article

Uniform shallow trenches termination design for high-voltage VDMOS transistor.

Published in:

Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 2, p. 104, doi. 10.1049/el.2019.2982

By:

Qi Li;
Tingting Bao;
Haiou Li;
Tangyou Sun;
Yuan Zuo

Publication type:

Article