Found: 2

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  • Electroluminescent properties of Tb-doped carbon-enriched silicon oxide.

    Published in:
    Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 34
    By:
    • Tiagulskyi, S. I.;
    • Nazarov, A. N.;
    • Gordienko, S. O.;
    • Vasin, A. V.;
    • Rusavsky, A. V.;
    • Nazarova, T. M.;
    • Gomeniuk, Yu. V.;
    • Rudko, G. V.;
    • Lysenko, V. S.;
    • Rebohle, L.;
    • Voelskow, M.;
    • Skorupa, W.;
    • Koshka, Y.
    Publication type:
    Article

  • Graphene layers fabricated from the Ni/a-SiC bilayer precursor.

    Published in:
    Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 4, p. 322
    By:
    • Nazarov, A. N.;
    • Vasin, A. V.;
    • Gordienko, S. O.;
    • Lytvyn, P. M.;
    • Strelchuk, V. V.;
    • Nikolenko, A. S.;
    • Stubrov, Yu. Yu.;
    • Hirov, A. S.;
    • Rusavsky, A. V.;
    • Popov, V. P.;
    • Lysenko, V. S.
    Publication type:
    Article