Works matching AU Bacherikov, Yu. Yu.
Results: 52
ZnO Growth on Macroporous Si Substrates by HF Magnetron Sputtering.
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- Journal of Nano- & Electronic Physics, 2020, v. 12, n. 3, p. 1, doi. 10.21272/jnep.12(3).03016
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Surface potential of meso-dimensional ZnS:Mn particles obtained using SHS method.
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- Journal of Nanoparticle Research, 2018, v. 20, n. 12, p. 1, doi. 10.1007/s11051-018-4413-1
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Implementation of Cyclical Processes in the Moisture Electricity Generation for Continuous Operation.
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- Energy Technology, 2024, v. 12, n. 4, p. 1, doi. 10.1002/ente.202301245
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Manganese Clusterization in ZnS:Mn, Mg Synthesized by Self-Propagating High-Temperature Synthesis.
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- Semiconductors, 2020, v. 54, n. 3, p. 330, doi. 10.1134/S1063782620030033
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Characterization of porous silicon carbide according to absorption and photoluminescence spectra.
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- Semiconductors, 2014, v. 48, n. 8, p. 1028, doi. 10.1134/S1063782614080041
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Features of ZnS-powder doping with a Mn impurity during synthesis and subsequent annealing.
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- Semiconductors, 2013, v. 47, n. 5, p. 713, doi. 10.1134/S1063782613050138
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Structural transformations in ZnS:Cu in the course of thermal annealing.
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- Semiconductors, 2012, v. 46, n. 2, p. 188, doi. 10.1134/S1063782612020030
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Distribution of CdSe nanoparticles synthesized in porous SiO matrix.
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- Semiconductors, 2011, v. 45, n. 9, p. 1189, doi. 10.1134/S1063782611090028
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Current transfer processes in a hydrated layer localized in a two-layer porous structure of nanosized ZrO<sub>2</sub>.
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- Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 5, p. 2753, doi. 10.1007/s10854-021-07481-2
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Structural and optical properties of ZnS:Mn micro-powders, synthesized from the charge with a different Zn/S ratio.
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- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 12, p. 8569, doi. 10.1007/s10854-017-6580-8
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Crystal Structure Determination of Low-Dimensional ZnS Powders Using EPR of Mn Ions.
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- Journal of Applied Spectroscopy, 2016, v. 83, n. 1, p. 51, doi. 10.1007/s10812-016-0241-1
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Diffusional relaxation in ZnS after thermal doping at 800°C.
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- Journal of Applied Spectroscopy, 2010, v. 77, n. 1, p. 95, doi. 10.1007/s10812-010-9298-4
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Effect of magnetic pulsed field on luminescence of zinc sulfide doped with CuCl, In, and MnS.
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- Journal of Applied Spectroscopy, 2007, v. 74, n. 3, p. 408, doi. 10.1007/s10812-007-0067-y
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Effect of the order in which powdered ZnS is doped with copper chloride and indium on formation of luminescence centers.
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- Journal of Applied Spectroscopy, 2006, v. 73, n. 5, p. 672, doi. 10.1007/s10812-006-0138-5
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Activation of zinc sulfide luminescence by modifying its surface by organic solvents.
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- Journal of Applied Spectroscopy, 2005, v. 72, n. 6, p. 877, doi. 10.1007/s10812-006-0019-y
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Electro- and photoluminescence of compounds based on doped zinc sulfide in the 500-750-nm range.
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- Journal of Applied Spectroscopy, 2005, v. 72, n. 1, p. 95, doi. 10.1007/s10812-005-0037-1
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Formation of titanium oxide films on the surface of porous silicon carbide.
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- Technical Physics, 2008, v. 53, n. 9, p. 1232, doi. 10.1134/S1063784208090168
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Luminescence from thermally doped nanopowders of zirconia.
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- Technical Physics, 2007, v. 52, n. 6, p. 747, doi. 10.1134/S1063784207060114
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Effect of rapid thermal annealing on the properties of thin dielectric films of gadolinium, titanium, and erbium oxides on the silicon carbide surface.
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- Technical Physics, 2007, v. 52, n. 2, p. 253, doi. 10.1134/S106378420702017X
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Doped ZnS Phosphors with a Constant Spectral Density in the 500–750 nm Range.
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- Technical Physics, 2005, v. 50, n. 5, p. 658, doi. 10.1134/1.1927225
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Effect of Microwave Annealing on Silicon Dioxide/Silicon Carbide Structures.
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- Technical Physics, 2003, v. 48, n. 5, p. 598, doi. 10.1134/1.1576474
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Redistribution of radiative recombination centers in the SiC/por-SiC/Dy<sub>2</sub>O<sub>3</sub> structure under the influence of athermal microwave irradiation.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2024, v. 27, n. 3, p. 274, doi. 10.15407/spqeo27.03.274
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Relationship between oxidation, stresses, morphology, local resistivity, and optical properties of TiO<sub>2</sub>, Gd<sub>2</sub>O<sub>3</sub>, Er<sub>2</sub>O<sub>3</sub>, SiO<sub>2</sub> thin films on SiC.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 3, p. 260, doi. 10.15407/spqeo26.03.260
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Formation of ZnO films on SiC/porous Si/Si substrates.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 2, p. 140, doi. 10.15407/spqeo26.02.140
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Investigation of gamma-ray sensitivity of YAG:Ce based scintillation structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 1, p. 89, doi. 10.15407/spqeo26.01.089
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Redistribution of centers responsible for radiative recombination in SiC/por-SiC and SiC/por-SiC/Er<sub>2</sub>O<sub>3</sub> structures under nonthermal action of microwave radiation.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 4, p. 355, doi. 10.15407/spqeo25.04.355
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Principles of creating the devices that are able to control the current flow in the second class conductors.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 2, p. 137, doi. 10.15407/spqeo25.02.137
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The model of potential barrier appearing in a hydrolayer localized in a two-layer porous nanostructure.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 3, p. 288, doi. 10.15407/spqeo24.03.288
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Preparation of quaternary compounds Cu<sub>2</sub>ZnSnS<sub>4</sub> by using the self-propagating high-temperature synthesis.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 3, p. 272, doi. 10.15407/spqeo24.03.272
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Comparative characteristics of TiO<sub>2</sub>(Er<sub>2</sub>O<sub>3</sub>, Dy<sub>2</sub>O<sub>3</sub>)/por-SiC/SiC heterostructures (Review).
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 253, doi. 10.15407/spqeo23.03.253
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Influence of microwave radiation on relaxation processes in silicon carbide.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 2, p. 175, doi. 10.15407/spqeo23.02.175
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Conductivity of molecular semiconductor material based on monomeric and polymeric methacroylacetophenone.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 4, p. 391, doi. 10.15407/spqeo22.04.391
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Effect of the doping method on luminescent properties of ZnS:Ag.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 3, p. 361, doi. 10.15407/spqeo22.03.361
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Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 4, p. 360, doi. 10.15407/spqeo21.04.360
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Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 2, p. 200, doi. 10.15407/spqeo21.02.200
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Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 4, p. 465, doi. 10.15407/spqeo20.04.465
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Luminescent properties of fine-dispersed self-propagating high-temperature synthesized ZnS:Cu,Mg.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 191, doi. 10.15407/spqeo20.02.191
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Luminescent properties of fine-dispersed self-propagating high-temperature synthesized ZnS:Cu,Mg.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 191, doi. 10.15407/spqeo20.02.191
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Influence of the presence of a fluxing agent and its composition on the spectral characteristics of ZnS(Cu) obtained by self-propagating high-temperature synthesis.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 3, p. 303, doi. 10.15407/spqeo19.03.303
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Electroluminescence powdered ZnS:Cu obtained by one-stage synthesis.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 309, doi. 10.15407/spqeo18.03.309
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Effect of heating rate on oxidation process of fine-dispersed ZnS:Mn obtained by SHS.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 2, p. 226, doi. 10.15407/spqeo18.02.226
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Luminescent properties of fine-dispersed ZnS:Cu prepared using self-propagating high-temperature synthesis.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 374
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The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 3, p. 239
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Interface features of SiO<sub>2</sub>/SiC heterostructures according to methods for producing the SiO<sub>2</sub> thin films.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 1, p. 13
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CdSe nanoparticles grown with different chelates.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 2, p. 75, doi. 10.15407/spqeo9.02.075
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Spectroscopy of (Si<sub>2</sub>)<sub>1-x</sub>(ZnS)<sub>x</sub> solid solutions.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 3, p. 16
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Photoluminescence of CdSe nanoparticles in porous GaP.
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- Semiconductors, 2009, v. 43, n. 11, p. 1433, doi. 10.1134/S1063782609110074
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Changes in characteristics of gadolinium, titanium, and erbium oxide films on the SiC surface under microwave treatment.
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- Semiconductors, 2008, v. 42, n. 7, p. 868, doi. 10.1134/S1063782608070191
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Color capabilities of ZnS:(CuCl,Ga) luminophores depending on the sequence of doping with CuCl and gallium.
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- Semiconductors, 2007, v. 41, n. 6, p. 723, doi. 10.1134/S1063782607060218
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The Effect of Pressing on the Luminescent Properties of ZnS:Ga Powders.
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- Semiconductors, 2005, v. 39, n. 3, p. 296, doi. 10.1134/1.1882790
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