Works matching IS 10637826 AND DT 1998 AND VI 32 AND IP 6

Results: 26

On the temperature and field dependences of the effective surface mobility in MIS structures

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 673

By:

Gergel', V. A.;
Timofeev, M. V.;
Zelenyi, A. P.

Publication type:

Article

Degradation of MOS tunnel structures at high current density

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 668, doi. 10.1134/1.1187462

By:

Grekhov, I. V.;
Shulekin, A. F.;
Veksler, M. I.

Publication type:

Article

Electron-phonon interaction and electron mobility in quantum-well type-II PbTe/PbS structures

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 665, doi. 10.1134/1.1187461

By:

Bondarenko, V. V.;
Zabudskiii, V. V.;
Sizov, F. F.

Publication type:

Article

Deep states in silicon &-doped GaAs

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 659, doi. 10.1134/1.1187460

By:

Aleshkin, V. Ya.;
Danil'tsev, V. M.;
Murel', A. V.;
Khrykin, O. I.;
Shashkin, V. I.

Publication type:

Article

The role of macrodefects in electronic and ionic processes in wide-band II-Vl semiconductors

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 575, doi. 10.1134/1.1187441

By:

Dzhumaev, B. R.

Publication type:

Article

Subthreshold characteristics of electrostatically controlled transistors and thyristors III. Buried gate

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 677, doi. 10.1134/1.1187464

By:

Kyuregyan, A. S.

Publication type:

Article

Elimination of the electron-phonon interaction in superlattices in a quantizing magnetic field

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 657, doi. 10.1134/1.1187459

By:

Kibis, O. V.

Publication type:

Article

The quantum Hall effect in a wide p-Ge1_xSix/Ge/p-Ge1_xSix potential well

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 749, doi. 10.1134/1.1187458

By:

Arapov, Yu. G.;
Neverov, V. N.;
Kharus, G. I.;
Shelushinina, N. G.;
Yakunin, M. V.;
Kuznetsov, O. A.

Publication type:

Article

Surface mobility and distribution of electrons in the accumulation layer of Ga2Se3/GaAs heterostructures

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 646, doi. 10.1134/1.1187457

By:

Antyushin, V. F.;
Arsent'ev, I. N.;
Vlasov, D. A.

Publication type:

Article

Induced photopleochroism of p-GaAIAs/p-n-GaAs structures

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 642, doi. 10.1134/1.1187456

By:

Berdinobatov, A.;
Nazarov, N.;
Rud', V. Yu.;
Rud', Yu. V.;
Sarkisova, V. M.

Publication type:

Article

Oxygen precipitates and the formation of thermal donors in silicon

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 640, doi. 10.1134/1.1187455

By:

Vabishchevich, N. V.;
Brinkevich, D. I.;
Prosolovich, V. S.

Publication type:

Article

Erbium impurity atoms in silicon

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 636, doi. 10.1134/1.1187454

By:

Masterov, V. F.;
Nasredinov, F. S.;
Seregin, P. P.;
Terukov, E. I.;
Mezdrogina, M. M.

Publication type:

Article

Experimental manifestations of correlated hopping in the temperature dependences of the conductivity of doped CdTe

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 631, doi. 10.1134/1.1187453

By:

Agrinskaya, N. V.;
Kozub, V. I.

Publication type:

Article

The effect of a strong electric field on the conductivity of a MnGalnS4: Eu single crystal

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 629, doi. 10.1134/1.1187452

By:

Tagiev, O. B.;
Gashimova, T. Sh.;
Askerov, I. M.

Publication type:

Article

Autosolitons in InSb in a magnetic field

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 625, doi. 10.1134/1.1187605

By:

Kamilov, I. K.;
Stepurenko, A. A.;
Kovalev, A. S.

Publication type:

Article

Charge-transfer theory in polycrystalline semiconductors with deep impurity centers

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 619, doi. 10.1134/1.1187451

By:

Doshchanov, K. M.

Publication type:

Article

Analysis of capacitance-relaxation signals consisting of several exponentials

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 617, doi. 10.1134/1.1187450

By:

Berman, L. S.

Publication type:

Article

Infrared reflectance spectra and Raman spectra of CuxAg1_xGaS2 solid solutions

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 613

By:

Bodnar, I. V.

Publication type:

Article

Structure of DX-like centers in narrow-band IV-Vl semiconductors doped with group-III elements

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 608

By:

Belogorokhov, A. I.;
Ivanchik, I. I.;
Popovid, Z.;
Romcevlc, N.;
Khokhlov, D. R.

Publication type:

Article

Defect-formation processes in silicon doped with manganese and germanium

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 606, doi. 10.1134/1.1187448

By:

Abdurakhmanov, K. P.;
Utamuradova, Sh. B.;
Daliev, Kh. S.;
Tadjy-Aglaeva, S. G.;
Ergashev, R. M.

Publication type:

Article

The nature of manganese luminescence centers in zinc sulfide single crystals

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 603

By:

Bulanyl, M. F.;
Polezhaev, B. A.;
Prekof'ev, T. A.

Publication type:

Article

Identifying the parameters of impurity levels in high-resistance semiconductor crystals by means of thermally stimulated currents with dosed Illumination of the samples

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 599, doi. 10.1134/1.1187446

By:

Kasherininov, P. G.;
Matyukhin, D. G.

Publication type:

Article

Pressure-induced insulator-metal transition in electron-irradiated Pb1_xSnxSe (x <0.03) alloys

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 594, doi. 10.1134/1.1187445

By:

Skipetrov, E. P.;
Zvereva, E. A.;
Kovalev, B. B.;
Skipetrova, L. A.

Publication type:

Article

Self-organizing nanoheterostructures in InGaAsP solid solutions

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 590, doi. 10.1134/1.1187444

By:

Vavilova, L. S.;
Ivanova, A. V.;
Kapitonov, V. A.;
Murashova, A. V.;
Tarasov, I. S.;
Arsent'ev, I. N.;
Bert, N. A.;
Musikhin, Yu. G.;
Pikhtin, N. A.;
Faleev, N. N.

Publication type:

Article

Study of the surface structure of tin dioxide layers for gas sensors by atomic-force microscopy

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 587, doi. 10.1134/1.1187443

By:

Bestaev, M. V.;
Dimitrov, D. Ts.;
Il'in, A. Yu.;
Moshnikov, V. A.;
Trager, F.;
Steitz, F.

Publication type:

Article

One-dimensional structures formed by low-temperature slip of dislocations that act as sources of dislocation absorption and emission in II-Vl semiconductor crystals

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 580, doi. 10.1134/1.1187442

By:

Tarbaev, N. I.;
Shepel'skii, G. A.

Publication type:

Article