Works matching DE "METAL organic chemical vapor deposition"
Results: 862
Periodical Ripening for MOCVD Growth of Large 2D Transition Metal Dichalcogenide Domains.
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- Advanced Functional Materials, 2023, v. 33, n. 18, p. 1, doi. 10.1002/adfm.202212773
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Merging Nanowires and Formation Dynamics of Bottom‐Up Grown InSb Nanoflakes.
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- Advanced Functional Materials, 2023, v. 33, n. 17, p. 1, doi. 10.1002/adfm.202212029
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Plasma-assisted deposition of metal and metal oxide coatings.
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- Journal of Materials Science, 1998, v. 33, n. 5, p. 1189, doi. 10.1023/A:1004321508598
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Materials science: Semiconductors grown large and thin.
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- Nature, 2015, v. 520, n. 7549, p. 631, doi. 10.1038/520631a
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Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures.
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- Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400021
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Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition.
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- Laser Chemistry, 2010, v. 2010, p. 1, doi. 10.1155/2011/140976
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Growing InAs/GaAs quantum dots by droplet epitaxy under MOVPE conditions.
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- Technical Physics Letters, 2016, v. 42, n. 7, p. 747, doi. 10.1134/S1063785016070294
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Pyrolytic deposition of nanostructured titanium carbide coatings on the surface of multiwalled carbon nanotubes.
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- Technical Physics Letters, 2016, v. 42, n. 5, p. 517, doi. 10.1134/S1063785016050278
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Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source.
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- Technical Physics Letters, 2016, v. 42, n. 5, p. 539, doi. 10.1134/S106378501605028X
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Contactless transfer of image via the gas phase in a thermoactivated process.
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- Technical Physics Letters, 2014, v. 40, n. 9, p. 779, doi. 10.1134/S1063785014090284
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Growing InN films by plasma-assisted metalorganic vapor-phase epitaxy on AlO and YSZ substrates in plasma generated by gyrotron radiation under electron cyclotron resonance conditions.
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- Technical Physics Letters, 2013, v. 39, n. 1, p. 51, doi. 10.1134/S1063785013010069
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AlInAsSb and AlGaInAsSb solid solutions for barrier layers of 3-5 μm spectral range radiation sources obtained by the method of vapor-phase epitaxy from organometallic compounds.
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- Technical Physics Letters, 2012, v. 38, n. 10, p. 900, doi. 10.1134/S1063785012100148
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Properties of narrow-bandgap (0.3-0.48 eV) AB solid solution epilayers grown by metal-organic chemical vapor deposition.
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- Technical Physics Letters, 2012, v. 38, n. 5, p. 409, doi. 10.1134/S1063785012050148
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Structural characterization of AlGaN/GaN superlattices by three-beam X-ray diffraction.
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- Technical Physics Letters, 2012, v. 38, n. 1, p. 38, doi. 10.1134/S1063785012010075
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Specific features of gallium nitride selective epitaxy in round windows.
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- Technical Physics Letters, 2011, v. 37, n. 8, p. 735, doi. 10.1134/S1063785011080104
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High growth rate of AlN in a planetary MOVPE reactor.
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- Technical Physics Letters, 2010, v. 36, n. 12, p. 1133, doi. 10.1134/S1063785010120205
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Effect of periodic interruption of the atmospheric-pressure MOVPE growth of InAs/GaAs quantum dots on their morphology and optoelectronic spectra.
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- Technical Physics Letters, 2009, v. 35, n. 1, p. 60, doi. 10.1134/S1063785009010180
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Photoemission from Gallium Nitride.
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- Technical Physics Letters, 2004, v. 30, n. 6, p. 451, doi. 10.1134/1.1773331
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Super-Photolumineszenz-Effekte in GaN-Schichten bei erhöhter Temperatur Super-photoluminescence-effects in GaN-layers at elevated temperature.
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- Technisches Messen, 2014, v. 81, n. 11, p. 554, doi. 10.1515/teme-2014-1051
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Growth and characterization of <italic>α</italic>-, <italic>β</italic>-, and <italic>ϵ</italic>-phases of Ga<sub>2</sub>O<sub>3</sub> using MOCVD and HVPE techniques.
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- Materials Research Letters, 2018, v. 6, n. 5, p. 268, doi. 10.1080/21663831.2018.1443978
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Single-step Au-catalysed synthesis and microstructural characterization of core--shell Ge/In--Te nanowires by MOCVD.
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- Materials Research Letters, 2018, v. 6, n. 1, p. 29, doi. 10.1080/21663831.2017.1384409
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Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates.
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- Membranes, 2021, v. 11, n. 11, p. 848, doi. 10.3390/membranes11110848
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Single-photon and photon pair emission from MOVPE-grown In(Ga)As quantum dots: shifting the emission wavelength from 1.0 to 1.3 μm.
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- Applied Physics B: Lasers & Optics, 2016, v. 122, n. 3, p. 1, doi. 10.1007/s00340-015-6280-0
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Introducing GaO thin films as novel electron blocking layer to ZnO/ p-GaN heterojunction LED.
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- Applied Physics B: Lasers & Optics, 2012, v. 109, n. 4, p. 605, doi. 10.1007/s00340-012-5219-y
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Effect of Ga doping concentration on the luminescence efficiency of GaN light-emitting diodes with Ga-doped ZnO contacts.
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- Applied Physics B: Lasers & Optics, 2012, v. 109, n. 2, p. 283, doi. 10.1007/s00340-012-5129-z
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Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy.
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- Applied Physics B: Lasers & Optics, 2009, v. 97, n. 3, p. 607, doi. 10.1007/s00340-009-3605-x
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Carbon supported platinum catalysts for catalytic wet air oxidation of refractory carboxylic acids.
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- Topics in Catalysis, 2005, v. 33, n. 1-4, p. 59, doi. 10.1007/s11244-005-2505-5
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Effects of Mg Component Ratio on Photodetection Performance of MgGa<sub>2</sub>O<sub>4</sub> Solar‐Blind Ultraviolet Photodetectors.
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- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 8, p. 1, doi. 10.1002/pssr.202200137
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GaN Power p–n Diodes on Hydride Vapor Epitaxy GaN Substrates with Near‐Unity Ideality Factor and <0.5 mΩ cm<sup>2</sup> Specific On‐Resistance.
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- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 4, p. 1, doi. 10.1002/pssr.202100599
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Metal‐Organic Chemical Vapor Deposition of Aluminum Scandium Nitride.
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- Physica Status Solidi - Rapid Research Letters, 2020, v. 14, n. 1, p. N.PAG, doi. 10.1002/pssr.201900535
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Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate.
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- Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 8, p. N.PAG, doi. 10.1002/pssr.201900167
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Weak Antilocalization in Granular Sb<sub>2</sub>Te<sub>3</sub> Thin Films Deposited by MOCVD.
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- Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 8, p. 1, doi. 10.1002/pssr.201800155
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Lattice response of the porous coordination framework Zn(hba) to guest adsorption.
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- Powder Diffraction, 2017, v. 32, p. S49, doi. 10.1017/S0885715617000720
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Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy.
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- Journal of Nanotechnology, 2012, p. 1, doi. 10.1155/2012/169284
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Synthesis and Crystal Structure of Mn(II) and Hg(II) Compounds and Solution Studies of Mn(II), Zn(II), Cd(II) and Hg(II) Compounds Based on Piperazinediium Pyridine-2,3-dicarboxylate.
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- Journal of the Iranian Chemical Society, 2009, v. 6, n. 3, p. 620, doi. 10.1007/BF03246542
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Vapor-Phase-Deposited Ag/Ir and Ag/Au Film Heterostructures for Implant Materials: Cytotoxic, Antibacterial and Histological Studies.
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- International Journal of Molecular Sciences, 2024, v. 25, n. 2, p. 1100, doi. 10.3390/ijms25021100
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Temperature-Dependent Effects of FeS Thin Film Synthesized by Thermochemical Spraying: An Optical and Physicochemical Investigation.
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- Journal of Thermal Spray Technology, 2016, v. 25, n. 3, p. 580, doi. 10.1007/s11666-016-0379-7
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On the origin of compositional fluctuations in ZnSe 1- x S x alloys grown by metal-organic vapour-phase epitaxy.
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- Philosophical Magazine, 2003, v. 83, n. 22, p. 2641, doi. 10.1080/1478643031000115763
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Carbon Dioxide Adsorption Behavior of Modified HKUST-1.
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- International Journal of Nanoscience, 2014, v. 13, n. 5/6, p. -1, doi. 10.1142/S0219581X14600023
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PHOTOLUMINESCENCE QUENCHING TECHNIQUE:: A SENSITIVE PROBE FOR DETECTING ORGANIC VAPORS AT LOW PPM.
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- International Journal of Nanoscience, 2011, v. 10, n. 4/5, p. 777, doi. 10.1142/S0219581X11008885
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STRUCTURAL CHARACTERISTICS OF 70 MeV Si<sup>5+</sup> ION IRRADIATION INDUCED NANOCLUSTERS OF GALLIUM NITRIDE.
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- International Journal of Nanoscience, 2011, v. 10, n. 4/5, p. 823, doi. 10.1142/S0219581X11009246
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EFFECT OF CAPPING LAYER ON In<sub>x</sub>Ga<sub>1-x</sub>N QUANTUM DOTS GROWN USING NNAD METHOD BY MOCVD.
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- International Journal of Nanoscience, 2009, v. 8, n. 1/2, p. 197, doi. 10.1142/S0219581X09005876
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INVESTIGATIONS OF InGaN/GaN AND InGaN/InGaN QDS GROWN IN A WIDE PRESSURE MOCVD REACTOR.
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- International Journal of Nanoscience, 2007, v. 6, n. 5, p. 327, doi. 10.1142/S0219581X07004882
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Iron Precursor Decomposition in the Magnesium Combustion Flame: A New Approach for the Synthesis of Particulate Metal Oxide Nanocomposites.
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- Particle & Particle Systems Characterization, 2017, v. 34, n. 10, p. n/a, doi. 10.1002/ppsc.201700109
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Highly Hydrophobic Isoreticular Porous Metal-Organic Frameworks for the Capture of Harmful Volatile Organic Compounds.
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- Angewandte Chemie, 2013, v. 125, n. 32, p. 8448, doi. 10.1002/ange.201303484
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Suitability of thin-GaN for AlGaN/GaN HEMT material and device.
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- Journal of Materials Science, 2022, v. 57, n. 10, p. 5913, doi. 10.1007/s10853-022-07017-x
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Atmospheric pressure metal organic chemical vapor deposition of thin germanium films.
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- Journal of Materials Science, 2021, v. 56, n. 15, p. 9274, doi. 10.1007/s10853-021-05871-9
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Improvement in structural and electrical characteristics of nonpolar a-plane Si-doped n-AlGaN.
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- Journal of Materials Science, 2020, v. 55, n. 26, p. 12022, doi. 10.1007/s10853-020-04895-x
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Efficient, durable protection of the Ti6242S titanium alloy against high-temperature oxidation through MOCVD processed amorphous alumina coatings.
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- Journal of Materials Science, 2020, v. 55, n. 11, p. 4883, doi. 10.1007/s10853-019-04277-y
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Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates.
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- Journal of Materials Science, 2018, v. 53, n. 24, p. 16439, doi. 10.1007/s10853-018-2804-4
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