Works matching IS 10637826 AND DT 1998 AND VI 32 AND IP 4
Results: 22
Amplification of electromagnetic waves at odd harmonics of the cyclotron resonance of heavy holes with negative effective masses in semiconducting diamond
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- Semiconductors, 1998, v. 32, n. 4, p. 452, doi. 10.1134/1.1187414
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- Article
Subthreshold characteristics of electrostatically switched transistors and thyristors. II. Deep in-plane gate
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- Semiconductors, 1998, v. 32, n. 4, p. 446, doi. 10.1134/1.1187413
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- Article
Effect of thermal annealing and chemical treatment on the photolumineecenca of porous silicon
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- Semiconductors, 1998, v. 32, n. 4, p. 443, doi. 10.1134/1.1187412
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- Article
Study of optical absorption in thin films of a-As2Se3 by photocapacitance spectroscopy
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- Semiconductors, 1998, v. 32, n. 4, p. 439
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- Article
Staebler-Wronski effect as a function of the Fermi level position and structure of nondoped, amorphous, hydrated silicon
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- Semiconductors, 1998, v. 32, n. 4, p. 434, doi. 10.1134/1.1187410
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- Article
Radiation emitted by InGaAs quantum-well structures. II. Homogeneous lineshape function
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- Semiconductors, 1998, v. 32, n. 4, p. 428, doi. 10.1134/1.1187409
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- Article
Radiation emitted by quantum-well InGaAs structures I. Spontaneous emission spectra
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- Semiconductors, 1998, v. 32, n. 4, p. 423, doi. 10.1134/1.1187554
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- Article
Intraband absorption of light in quantum wells induced by electron-electron collisions
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- Semiconductors, 1998, v. 32, n. 4, p. 417, doi. 10.1134/1.1187408
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- Article
Electric and photoelectric properties of n-Gaxln1_xN/p-Si anisotypic heterojunctions
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- Semiconductors, 1998, v. 32, n. 4, p. 412, doi. 10.1134/1.1187407
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- Article
Photosensitivity of thin-film structures based on laser-deposited Culn(TexSe1_x)2 layers
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- Semiconductors, 1998, v. 32, n. 4, p. 409
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- Article
Recombination of donor nickel excitons in the solid solutions ZnSe1_ySy:Ni
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- Semiconductors, 1998, v. 32, n. 4, p. 406
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- Article
Indirect electronic transitions in semiconductors occurring as a result of scattering of charge carriers by dislocations in a quantizing magnetic field
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- Semiconductors, 1998, v. 32, n. 4, p. 404, doi. 10.1134/1.1187404
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- Article
Energy spectrum of acceptors in the semimagnetic semiconductors p-Hg1_xMnxTe in the spin-glass region
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- Semiconductors, 1998, v. 32, n. 4, p. 401
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- Article
Characteristic features of the defect formation process in Pb1_xSnxSe(x<0.06)
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- Semiconductors, 1998, v. 32, n. 4, p. 397, doi. 10.1134/1.1187402
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- Article
Short-wavelength photoluminescence of SIO2 layers Implanted with high doses of Si+, Ge+, and Ar+ ions
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- Semiconductors, 1998, v. 32, n. 4, p. 392, doi. 10.1134/1.1187417
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- Article
On trapping of minority current carriers in n-type CdxHg1_xTe at low temperatures
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- Semiconductors, 1998, v. 32, n. 4, p. 389, doi. 10.1134/1.1187401
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- Article
Optical absorption and photosensitivity of CulnxGa1_xSe2 thin film structures
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- Semiconductors, 1998, v. 32, n. 4, p. 385
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- Article
Thermal expansion and characteristic features of the strength of interatomic bonds in melts of III-V compounds (AISb, GaSb, InSb, GaAs, InAs)
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- Semiconductors, 1998, v. 32, n. 4, p. 382, doi. 10.1134/1.1187400
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- Article
Observation of low-temperature diffusion of aluminum impurity atoms in hydrogen-implanted silicon
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- Semiconductors, 1998, v. 32, n. 4, p. 375, doi. 10.1134/1.1187399
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- Article
Influence of the initial boron doping level on the boron atom distribution arising as a result of heat treatment in silicon Implanted with boron ions
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- Semiconductors, 1998, v. 32, n. 4, p. 372, doi. 10.1134/1.1187398
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- Article
Effect of nonuniform distribution of radiation defects in GaAs on the DLTS spectra
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- Semiconductors, 1998, v. 32, n. 4, p. 366, doi. 10.1134/1.1187397
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- Article
Quantum dot heterostructures: fabrication, properties, lasers (Review)
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- Semiconductors, 1998, v. 32, n. 4, p. 343, doi. 10.1134/1.1187396
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- Article