Works matching IS 10637826 AND DT 1998 AND VI 32 AND IP 5
Results: 25
Charge-carrier exclusion and accumulation intensified by ohmic contacts
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 568, doi. 10.1134/1.1187440
- By:
- Publication type:
- Article
Characteristic features of the IR spectra of amorphous boron-doped hydrated silicon
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 565, doi. 10.1134/1.1187439
- By:
- Publication type:
- Article
Nonmonotonic character of the growth-temperature dependence of the resistance of polycrystalline silicon films
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 562, doi. 10.1134/1.1187438
- By:
- Publication type:
- Article
Effect of annealing in an atomic-hydrogen atmosphere on the properties of amorphous hydrated silicon films and the parameters of p-i-n structures based on them
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 555, doi. 10.1134/1.1187437
- By:
- Publication type:
- Article
Investigation of the photovoltage in por-Silp-Si structures by the pulsed-photovoltage method
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 549, doi. 10.1134/1.1187436
- By:
- Publication type:
- Article
Numerical analysis of the longitudinal electric current during resonance current flow in a n-GaAslAIxGa1_xAS superlattice with doped quantum wells
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 544, doi. 10.1134/1.1187435
- By:
- Publication type:
- Article
Electron tunneling between two-dimensional electronic systems in a heterostructure with a single doped barrier
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 539, doi. 10.1134/1.1187434
- By:
- Publication type:
- Article
Transport properties of magnetoexcitons in coupled quantum wells
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 533, doi. 10.1134/1.1187433
- By:
- Publication type:
- Article
Mechanism of anodic electroluminescence of porous silicon in electrolytes
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 529, doi. 10.1134/1.1187556
- By:
- Publication type:
- Article
Heterojunction based on semiconductors with the chain structure TISe-TIInSe2
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 526, doi. 10.1134/1.1187432
- By:
- Publication type:
- Article
Binding energy of exciton-impurity complexes in semiconductors with diamond and zinc blende structure
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 521, doi. 10.1134/1.1187555
- By:
- Publication type:
- Article
Differential resistance of AulGaAs1_xSbx tunneling contacts near the zero-bias anomaly. II. Contacts to p-GaAs1_xSbx
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 517, doi. 10.1134/1.1187431
- By:
- Publication type:
- Article
Differential resistance of Au/GaAs1_xSbx tunneling contacts in the zero-bias anomaly region. I. Contacts to n-GaAs1_xSbx
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 513, doi. 10.1134/1.1187430
- By:
- Publication type:
- Article
Analysis of changes in the intensity of intrinsic luminescence after diffusion of copper into semi-insulating undoped gallium arsenide crystals
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 509, doi. 10.1134/1.1187429
- By:
- Publication type:
- Article
Hopping.induced energy relaxation with allowance for all possible versions of intercenter transitions
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 504, doi. 10.1134/1.1187428
- By:
- Publication type:
- Article
Distinctive features of the magnetoresistance of degenerately doped n-lnAs and their influence on magnetic.field-dependent microwave absorption
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 497, doi. 10.1134/1.1187427
- By:
- Publication type:
- Article
Natural nonuniformities in the height of a Schottky barrier
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 495, doi. 10.1134/1.1187426
- By:
- Publication type:
- Article
Effect of ultraviolet irradiation on the luminescence and optical properties of ZnS: Mn films
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 491, doi. 10.1134/1.1187425
- By:
- Publication type:
- Article
Distinctive features of the far-infrared reflection spectra of the semimagnetic semiconductors Hg1 _xMnxTe1_ySey
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 488, doi. 10.1134/1.1187424
- By:
- Publication type:
- Article
Effect of the diameter of the photoexcited region on the picosecond relaxation of bleaching in a thin layer of GaAs
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 484, doi. 10.1134/1.1187423
- By:
- Publication type:
- Article
Stimulated-emission spectrum arising from interband absorption of a picosecond optical pulse in a thin layer of GaAs
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 479, doi. 10.1134/1.1187422
- By:
- Publication type:
- Article
A quantum-well model and the optical absorption edge in structurally nonuniform a-Si:H-based alloys
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 473, doi. 10.1134/1.1187421
- By:
- Publication type:
- Article
Creation of vicinal facets on the surface of gallium arsenide with orientations close to (100) under conditions of nonequilibrium mass transfer
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 269, doi. 10.1134/1.1187420
- By:
- Publication type:
- Article
Nanometer-size atomic clusters in semiconductors--a new approach to tailoring material properties
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 257
- By:
- Publication type:
- Article
How the type of bombarding ion affects the formation of radiation defects in silicon
- Published in:
- Semiconductors, 1998, v. 32, n. 5, p. 456, doi. 10.1134/1.1187419
- By:
- Publication type:
- Article