Generation of Bulk Defects in Some Semiconductors by Laser Radiation in the Transparency Region of the Crystal.
- Published in:
- Semiconductors, 2000, v. 34, n. 9, p. 1004, doi. 10.1134/1.1309406
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2000 AND VI 34 AND IP 9
Results: 24
1
2
Electron Mobility and Electron Scattering by Polar Optical Phonons in Heterostructure Quantum Wells.
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- Semiconductors, 2000, v. 34, n. 9, p. 1011
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- Publication type:
- Article
3
Radiation Defects in n-4H-SiC Irradiated with 8-MeV Protons.
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- Semiconductors, 2000, v. 34, n. 9, p. 1016, doi. 10.1134/1.1309411
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- Publication type:
- Article
4
Breakdown of Shallow-Level Donors in Si and Ge on the Insulating Side of a Strain-Induced Metal–Insulator Transition.
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- Semiconductors, 2000, v. 34, n. 9, p. 1021, doi. 10.1134/1.1309413
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- Publication type:
- Article
5
Mechanism of High Radiation Stability of Electrical Parameters of SmS Thin Films.
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- Semiconductors, 2000, v. 34, n. 9, p. 1024
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- Publication type:
- Article
6
Influence of Erbium Ion Implantation Dose on Characteristics of (111) Si:(Er, O) Light-Emitting Diodes Operating in p–n-Junction Breakdown Mode.
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- Semiconductors, 2000, v. 34, n. 9, p. 1027, doi. 10.1134/1.1309417
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- Publication type:
- Article
7
The Transient Photomagnetic Effect in Multilayer Structures with p–n Junctions.
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- Semiconductors, 2000, v. 34, n. 9, p. 1062, doi. 10.1134/1.1309423
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- Publication type:
- Article
8
Generalized Multilayer Model for the Quantitative Analysis of the Electromodulation Components of the Electroreflectance and Photoreflectance Spectra of Semiconductors in the Region of the E[sub 0] Fundamental Transition.
- Published in:
- Semiconductors, 2000, v. 34, n. 9, p. 1045, doi. 10.1134/1.1309419
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- Publication type:
- Article
9
Thermal EMF in a Bipolar Semiconductor with Phonon Drag of Carriers.
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- Semiconductors, 2000, v. 34, n. 9, p. 1052, doi. 10.1134/1.1309420
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- Publication type:
- Article
10
Electrical Conductivity of Silicon-on-Insulator Structures Prepared by Bonding Silicon Wafers to a Substrate Using Hydrogen Implantation.
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- Semiconductors, 2000, v. 34, n. 9, p. 1054, doi. 10.1134/1.1309421
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- Publication type:
- Article
11
Fabrication and Photoelectric Properties of Oxide/CdTe Structures.
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- Semiconductors, 2000, v. 34, n. 9, p. 1058, doi. 10.1134/1.1309422
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- Publication type:
- Article
12
Optical Bistability and Instability in a Semiconductor in the Case Where the Relaxation Time of Free Charge Carriers and Their Equilibrium Concentration are Temperature-Dependent.
- Published in:
- Semiconductors, 2000, v. 34, n. 9, p. 1031, doi. 10.1134/1.1309418
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- Publication type:
- Article
13
Photovoltaic Effect in a-Si:H/n-InSe Heterostructures.
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- Semiconductors, 2000, v. 34, n. 9, p. 1064, doi. 10.1134/1.1309424
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- Publication type:
- Article
14
Accumulation of Majority Charge Carriers in GaAs Layers Containing Arsenic Nanoclusters.
- Published in:
- Semiconductors, 2000, v. 34, n. 9, p. 1068, doi. 10.1134/1.1309425
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- Publication type:
- Article
15
Diagnostics of the Hot-Hole Distribution Function in Quantum Wells in a Strong Electric Field.
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- Semiconductors, 2000, v. 34, n. 9, p. 1073, doi. 10.1134/1.1309426
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- Publication type:
- Article
16
Size-Quantization Stark Effect in Quasi-Zero-Dimensional Semiconductor Structures.
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- Semiconductors, 2000, v. 34, n. 9, p. 1079, doi. 10.1134/1.1309427
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- Publication type:
- Article
17
Nanostructured a-Si:H Films Obtained by Silane Decomposition in a Magnetron Chamber.
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- Semiconductors, 2000, v. 34, n. 9, p. 1085, doi. 10.1134/1.1309428
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- Publication type:
- Article
18
On the Mechanism of Porous Silicon Formation.
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- Semiconductors, 2000, v. 34, n. 9, p. 1090, doi. 10.1134/1.1309429
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- Publication type:
- Article
19
Elemental Composition and Electrical Properties of (a-C:H):Cu Films Prepared by Magnetron Sputtering.
- Published in:
- Semiconductors, 2000, v. 34, n. 9, p. 1094, doi. 10.1134/1.1309430
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- Publication type:
- Article
20
Tunable InAsSb/InAsSbP Laser with a Low Radiation Divergence in the p–n-Junction Plane.
- Published in:
- Semiconductors, 2000, v. 34, n. 9, p. 1100, doi. 10.1134/1.1309431
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- Publication type:
- Article
21
Long-Range Effects of Ion Irradiation, Chemical Etching, and Mechanical Grinding on Relaxation of a Solid Solution of Iron in Gallium Phosphide.
- Published in:
- Semiconductors, 2000, v. 34, n. 9, p. 983, doi. 10.1134/1.1309397
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- Publication type:
- Article
22
Oxygen-Containing Radiation Defects in Si[sub 1 – ][sub x]Ge[sub x].
- Published in:
- Semiconductors, 2000, v. 34, n. 9, p. 989, doi. 10.1134/1.1309399
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- Publication type:
- Article
23
Specific Features of the Behavior of Oxygen in Sn-Doped Silicon.
- Published in:
- Semiconductors, 2000, v. 34, n. 9, p. 994, doi. 10.1134/1.1309402
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- Publication type:
- Article
24
Early Stages of Oxygen Precipitation in Silicon: The Effect of Hydrogen.
- Published in:
- Semiconductors, 2000, v. 34, n. 9, p. 998, doi. 10.1134/1.1309404
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- Publication type:
- Article