Works matching IS 10637826 AND DT 1998 AND VI 32 AND IP 11

Results: 25

Chalcogenide passivation of III–V semiconductor surfaces.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1141, doi. 10.1134/1.1187580

By:

Bessolov, V. N.;
Lebedev, M. V.

Publication type:

Article

Effect of ion dose and annealing mode on photoluminescence from SiO[sub 2] implanted with Si ions.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1222, doi. 10.1134/1.1187595

By:

Kachurin, G. A.;
Leıer, A. F.;
Zhuravlev, K. S.;
Tyschenko, I. E.;
Gutakovskiı, A. K.;
Volodin, V. A.;
Skorupa, W.;
Yankov, R. A.

Publication type:

Article

Formation of Se[sub 2] quasimolecules in selenium-doped silicon.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1162, doi. 10.1134/1.1187582

By:

Taskin, A. A.;
Tishkovskiı, E. G.

Publication type:

Article

Effect of electron-phonon energy exchange on thermal wave propagation in semiconductors.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1179, doi. 10.1134/1.1187587

By:

Gurevich, Yu. G.;
González de la Cruz, G.;
Logvinov, G. N.;
Kasyanchuk, M. N.

Publication type:

Article

Study of the dynamical characteristics of an insulator–semiconductor interface.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1190, doi. 10.1134/1.1187590

By:

Fedorenko, Y. G.;
Sverdlova, A. M.;
Malinin, A.

Publication type:

Article

Effect of size dispersion on the optical absorption of an ensemble of semiconductor quantum dots.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1229, doi. 10.1134/1.1187596

By:

Vasilevskiı, M. I.;
Akinkina, E. I.;
de Paula, A. M.;
Anda, E. V.

Publication type:

Article

Scanning electron microscopy of long-wavelength laser structures.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1157

By:

Solov’ev, V. A.;
Mikhaılova, M. P.;
Moiseev, K. D.;
Stepanov, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

Experimental study of the transverse Ettingshausen–Nernst effect and thermoelectric power in the presence of a large temperature gradient.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1168, doi. 10.1134/1.1187583

By:

Gadzhialiev, M. M.;
Elizarov, V. A.

Publication type:

Article

Nonlinear waves of interacting charge carriers in semiconductors.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1170, doi. 10.1134/1.1187584

By:

Stepanov, V. E.

Publication type:

Article

Influence of crystal orientation of the growth surface due to molecular beam epitaxy on the optical properties of Si-doped GaAs layers.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1175, doi. 10.1134/1.1187586

By:

Mokerov, V. G.;
Galiev, G. B.;
Slepnev, Yu. V.;
Khabarov, Yu. V.

Publication type:

Article

The magnetoplasma effect in single crystals of antimony at T>=80 K.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1173, doi. 10.1134/1.1187585

By:

Zaıtsev, A. A.;
Ivanov, K. G.;
Grabov, V. M.

Publication type:

Article

Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 μm) in erbium-doped a-Si:H films.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1234, doi. 10.1134/1.1187597

By:

Kudoyarova, V. Kh.;
Kuznetsov, A. N.;
Terukov, E. I.;
Gusev, O. B.;
Kudryavtsev, Yu. A.;
Ber, B. Ya.;
Gusinskiı, G. M.;
Fuhs, W.;
Weiser, G.;
Kuehne, H.

Publication type:

Article

Nature of the donor action of Gd impurity in crystals of lead and tin telluride.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1185, doi. 10.1134/1.1187588

By:

Zayachuk, D. M.;
Dobryanskiı, O. A.

Publication type:

Article

Effect of laser-induced defects on luminescence in InP crystals.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1187, doi. 10.1134/1.1187589

By:

Baimbetov, F. B.;
Dzhumamukhambetov, N. G.

Publication type:

Article

Effect of hydrogenation on the properties of metal–GaAs Schottky barrier contacts.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1196, doi. 10.1134/1.1187591

By:

Bozhkov, V. G.;
Kagadeı, V. A.;
Torkhov, N. A.

Publication type:

Article

Electrical characteristics of silicon–rare-earth fluoride layered switching structures.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1201, doi. 10.1134/1.1187592

By:

Rozhkov, V. A.;
Shalimova, M. B.

Publication type:

Article

The spectrum of real-space indirect magnetoexcitons.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1206, doi. 10.1134/1.1187593

By:

Kaputkina, N. E.;
Lozovik, Yu. E.

Publication type:

Article

Resonant tunneling dynamics of heterostructures based on semiconductors with two-valley spectra.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1214, doi. 10.1134/1.1187594

By:

Karavaev, G. F.;
Voronkov, A. A.

Publication type:

Article

Influence of the deposition and annealing conditions on the optical properties of amorphous silicon.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1239, doi. 10.1134/1.1187598

By:

Mashin, A. I.;
Ershov, A. V.;
Khokhlov, D. A.

Publication type:

Article

Influence of internal mechanical stresses on the characteristics of GaAs light-emitting diodes.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1242, doi. 10.1134/1.1187599

By:

Sidorov, V. G.;
Sidorov, D. V.;
Sokolov, V. I.

Publication type:

Article

Appearance of negative resistance in p-n junction structures in a microwave field.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1248, doi. 10.1134/1.1187600

By:

Usanov, D. A.;
Skripal’, A. V.;
Ugryumova, N. V.

Publication type:

Article

In memory of Yuliı Ivanovich Ukhanov.

Published in:

1998

By:

Alferov, Zh.I.;
Vasil'ev, Yu.S.;
Zabrodski&icaron;, A.G.;
Zakharchenya, B.P.;
Ivanov-Omski&icaron;, V.I.;
Ipatova, I.P.;
Kesamanly, F.P.;
Masterov, V.F.

Publication type:

Obituary

In memory of Sergeı Ivanovich Radautsan.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1253

By:

Alferov, Zh.I.;
Gulyaev, Yu.V.;
Keldysh, L.M.;
Kuznetsov, F.A.;
Prokhorov, A.M.;
Perel', V.I.;
Veselago, V.G.;
Gurevich, A.G.;
Prochukhan, V.D.;
Nikiforov, K.G.;
Ivanov-Omski&icaron;, V.I.

Publication type:

Article

Erratum: Radiation emitted by quantum-well InGaAs structures I. Spontaneous emission spectra [Semiconductors 32, 423–427 (April 1998)].

Published in:

1998

By:

Eliseev, P. G.;
Akimova, I. V.

Publication type:

Correction Notice

Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, No. 10, 1048 (October 1998)].

Published in:

1998

By:

Katsavets, N. I.;
Laws, G. M.;
Harrison, I.;
Larkins, E. C.;
Benson, T. M.;
Cheng, T. S.;
Foxon, C. T.

Publication type:

Erratum