Works matching IS 10637826 AND DT 1998 AND VI 32 AND IP 3

Results: 28

Growth characteristics and physical properties of PbTe/BaF[sub 2] prepared under nonequilibrium conditions.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 231, doi. 10.1134/1.1187395

By:

Plyatsko, S. V.

Publication type:

Article

On the effect of a dopant on the formation of disordered regions in GaAs under irradiation with fast neutrons.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 235

By:

Klad’ko, V. P.;
Plyatsko, S. V.

Publication type:

Article

On the mechanisms of long-term relaxation of the conductivity in compensated Si<B,S> and Si<B,Rh> as a result of irradiation.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 238, doi. 10.1134/1.1187387

By:

Yunusov, M. S.;
Karimov, M.;
Oksengendler, B. L.

Publication type:

Article

Tin telluride based thermoelectrical alloys.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 241, doi. 10.1134/1.1187388

By:

Vedeneev, V. P.;
Krivoruchko, S. P.;
Sabo, E. P.

Publication type:

Article

Lock-in-phase analysis of n-GaAs photoreflectance spectra.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 245

By:

Gansha, A. V.;
Kus’menko, R. V.;
Kircher, W.;
Schreiber, J.;
Hildebrandt, S.

Publication type:

Article

Electrical properties of GaSb-based solid solutions (GaInAsSb, GaAlSb, GaAlAsSb) and their compositional dependence.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 250, doi. 10.1134/1.1187389

By:

Voronina, T. I.;
Dzhurtanov, B. E.;
Lagunova, T. S.;
Sipovskaya, M. A.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

Low-frequency noise in n-GaN.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 257, doi. 10.1134/1.1187374

By:

D’yakonova, N. V.;
Levinshteın, M. E.;
Contreras, S.;
Knap, W.;
Beaumont, B.;
Gibart, P.

Publication type:

Article

Diffusion saturation of nondoped hydrated amorphous silicon by tin impurity.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 263, doi. 10.1134/1.1187376

By:

Kabaldin, A. N.;
Neımash, V. B.;
Tsmots’, V. M.;
Shtym, V. S.

Publication type:

Article

Equation of state of an electron gas and theory of the thermal voltage in a quantizing magnetic field.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 261, doi. 10.1134/1.1187375

By:

Askerov, B. M.;
Machmudov, M. M.;
Gasanov, Kh. A.

Publication type:

Article

Role of light fluctuations in the appearance of the bistability of the photocarrier distribution.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 267, doi. 10.1134/1.1187377

By:

Gudyma, Yu. V.;
Nikirsa, D. D.

Publication type:

Article

Laser-modulated epitaxy of lead telluride.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 270, doi. 10.1134/1.1187378

By:

Plyatsko, S. V.

Publication type:

Article

Optical properties of crystals of the solid solutions (InSb)[sub 1-x](CdTe)[sub x].

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 274, doi. 10.1134/1.1187465

By:

Brodovoı, V. A.;
Vyalyı, N. G.;
Knorozok, L. M.

Publication type:

Article

Properties of periodic α-Si:H/a-SiN[sub x]:H structures obtained by nitridization of amorphous-silicon layers.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 297, doi. 10.1134/1.1187381

By:

Bilenko, D. I.;
Belobrovaya, O. Ya.;
Galishnikova, Yu. N.;
Zharkova, É. A.;
Kazanova, N. P.;
Koldobanova, O. Yu.;
Khasina, E. I.

Publication type:

Article

Ionization of impurity centers in a semiconductor quantum superlattice by nonlinear electromagnetic waves.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 302, doi. 10.1134/1.1187382

By:

Kryuchkov, S. V.;
Popov, K. A.

Publication type:

Article

Effect of metastable states on the de-excitation of excitons in n-GaAs.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 277, doi. 10.1134/1.1187379

By:

Krivolapchuk, V. V.;
Poletaev, N. K.

Publication type:

Article

Effect of the charge state of defects on the light-induced kinetics of the photoconductivity of amorphous hydrated silicon.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 312, doi. 10.1134/1.1187384

By:

Golikova, O. A.

Publication type:

Article

Two- and three-dimensional conduction channels at block boundaries in (CdHg)Te mosaic crystals.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 288, doi. 10.1134/1.1187550

By:

Pogrebnyak, V. A.;
Khalameıda, D. D.;
Yakovenko, V. M.;
Rarenko, I. M.

Publication type:

Article

Transport phenomena in the solid solution (Pb[sub 0.78]Sn[sub 0.22])[sub 0.97]In[sub 0.03]Te in the hopping conduction region.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 280, doi. 10.1134/1.1187466

By:

Nemov, S. A.;
Ravich, Yu. I.;
Proshin, V. I.;
Abaıdulina, T. G.

Publication type:

Article

Local neutrality and pinning of the chemical potential in III–V solid solutions: interfaces and radiation effects.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 284, doi. 10.1134/1.1187380

By:

Brudnyi, V. N.;
Grinyev, S. N.

Publication type:

Article

Harmonics generation in quantum-size structures in a strong electromagnetic field.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 306, doi. 10.1134/1.1187383

By:

Kapaev, V. V.;
Tyurin, A. E.

Publication type:

Article

Current-voltage characteristics of GaN and AlGaN p–i–n diodes.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 335, doi. 10.1134/1.1187392

By:

Kuznetsov, N. I.;
Irvine, K. G.

Publication type:

Article

Preparation and photosensitivity of heterostructures based on anodized silicon carbide.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 295, doi. 10.1134/1.1187349

By:

Lebedev, A. A.;
Rud’, V. Yu.;
Rud’, Yu. V.

Publication type:

Article

Photosensitivity of porous silicon–layered III–VI semiconductors heterostructures.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 320, doi. 10.1134/1.1187558

By:

Lebedev, A. A.;
Rud’, V. Yu.;
Rud’, Yu. V.

Publication type:

Article

Magnetic-resonance spectroscopy of porous quantum-size structures.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 322, doi. 10.1134/1.1187390

By:

Mamykin, A. I.;
Moshnikov, V. A.;
Il’in, A. Yu.

Publication type:

Article

Properties of p[sup +]–n structures with a buried layer of radiation-induced defects.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 325, doi. 10.1134/1.1187394

By:

Ivanov, A. M.;
Strokan, N. B.;
Shuman, V. B.

Publication type:

Article

Lifetime of nonequilibrium carriers in semiconductors from the standpoint of a collective interaction in the process of radiative recombination.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 332, doi. 10.1134/1.1187391

By:

Zaıtsev, S. V.;
Georgievskiı, A. M.

Publication type:

Article

Effect of ion irradiation of amorphous-silicon films on their crystallization.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 316, doi. 10.1134/1.1187385

By:

Bakhtina, N. V.;
Mashin, A. I.;
Pavlov, A. P.;
Pitirimova, E. A.

Publication type:

Article

Spatial distribution of the radiation in the far zone of InAsSb/InAsSbP mesastrip lasers as a function of current.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 339, doi. 10.1134/1.1187393

By:

Danilova, T. N.;
Danilova, A. P.;
Ershov, O. G.;
Imenkov, A. N.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article