Works matching IS 10637826 AND DT 1997 AND VI 31 AND IP 1

Results: 25

Electrical and photoelectric properties of a Pd–p[sup 0]-Si–p-Si structure with a disordered intermediate p[sup 0] layer.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 11, doi. 10.1134/1.1187325

By:

Slobodchikov, S. V.;
Salikhov, Kh. M.;
Russu, E. V.;
Meredov, M. M.;
Yazlyeva, A. I.

Publication type:

Article

Influence of mismatch of the lattice parameters on the structural, optical, and transport properties of InGaAs layers grown by molecular beam epitaxy on InP(100) substrates.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 15, doi. 10.1134/1.1187044

By:

Zhukov, A. E.;
Egorov, A. Yu.;
Ustinov, V. M.;
Tsatsul’nikov, A. F.;
Maksimov,, M. V.;
Faleev, N. N.;
Kop’ev, P. S.

Publication type:

Article

Carrier accumulation and strong electrode sheath fields in illuminated, high-resistivity MISIM structures.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 19, doi. 10.1134/1.1187045

By:

Reznikov, B. I.;
Tsarenkov, G. V.

Publication type:

Article

Photoelectric amplification of variband photoresistors.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 1, doi. 10.1134/1.1187327

By:

Savitskiı, V. G.;
Sokolovskiı, B. S.

Publication type:

Article

Growth of ZnSe films on GaAs(100) substrate by x-ray-enhanced, vapor-phase epitaxy.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 26, doi. 10.1134/1.1187046

By:

Kovalenko, A. V.

Publication type:

Article

Photoelectric and photomagnetic properties of the gapless semiconductor Cd[sub x]Hg[sub 1-x]Te in the infrared and millimeter spectral regions when an energy gap is opened.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 29, doi. 10.1134/1.1187047

By:

Gasan-zade, S. G.;
Sal’kov, E. A.;
Shepel’skiı, G. A.

Publication type:

Article

Ion transfer processes in an insulating layer containing traps.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 36, doi. 10.1134/1.1187048

By:

Gol’dman, E. I.

Publication type:

Article

Vibrational spectra of CuInS[sub 2x]Se[sub 2(1-x)] solid solutions.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 41

By:

Bodnar’, I. V.

Publication type:

Article

Charge instability effects in the system silicon carbide–insulator.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 44, doi. 10.1134/1.1187050

By:

Karachinov, V. A.

Publication type:

Article

Depth distribution of deep-level centers in silicon dioxide near an interface with indium phosphide.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 67, doi. 10.1134/1.1187040

By:

Berman, L. S.

Publication type:

Article

Optical properties of quasiperiodic and aperiodic PbS–CdS superlattices.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 46, doi. 10.1134/1.1187051

By:

Musikhin, S. F.;
Il’in, V. I.;
Rabizo, O. V.;
Bakueva, L. G.;
Yudintseva, T. V.

Publication type:

Article

Relaxation spectra of photoluminescence from porous silicon obtained by chemical etching of laser-modified silicon.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 4, doi. 10.1134/1.1187326

By:

Fedorenko, L. L.;
Sardarly, A. D.;
Kaganovich, É. B.;
Svechnikov, S. V.;
Dikiı, S. P.;
Baranets, S. V.

Publication type:

Article

Photoluminescence of InSb quantum dots in GaAs and GaSb matrices.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 55, doi. 10.1134/1.1187086

By:

Tsatsul’nikov, A. F.;
Ledentsov, N. N.;
Maksimov, M. V.;
Mel’tser, B. Ya.;
Neklyudov, P. V.;
Shaposhnikov, S. V.;
Volovik, B. V.;
Krestnikov, I. L.;
Sakharov, A. V.;
Bert,, N. A.;
Kop’ev, P. S.;
Alferov, Zh. I.;
Bimberg, D.

Publication type:

Article

Investigation of the structure of the edge of the valence band of Cd[sub 1-x]Mn[sub x]S crystals on the basis of magnetooptical measurements.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 58, doi. 10.1134/1.1187053

By:

Abramishvili, V. G.;
Komarov, A. V.;
Ryabchenko, S. M.;
Semenov, Yu. G.

Publication type:

Article

Analysis of the temporal instability of the parameters of an insulator/III–V compound by the isothermal capacitance relaxation method.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 63, doi. 10.1134/1.1187054

By:

Berman, L. S.

Publication type:

Article

Waveguide properties of gallium, aluminum, and indium nitride heterostructures.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 51, doi. 10.1134/1.1187052

By:

Bugrov, V. E.;
Zubrilov, A. S.

Publication type:

Article

Electron-phonon scattering engineering.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 69

By:

Pozˇela, J.;
Jucienė, V.;
Namajũnas, A.;
Pozˇela, K.

Publication type:

Article

Monte Carlo simulation of the low-temperature mobility of two-dimensional electrons in a silicon inversion layer.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 72, doi. 10.1134/1.1187039

By:

Borzdov, V. M.;
Petrovich, T. A.

Publication type:

Article

Study of PbTe photodiodes on a buffer sublayer of porous silicon.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 76, doi. 10.1134/1.1187087

By:

Belyakov, L. V.;
Zakharova, I. B.;
Zubkova, T. I.;
Musikhin, S. F.;
Rykov, S. A.

Publication type:

Article

High-frequency capacitance–voltage characteristic of GaAs-based, thin-film structures.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 78, doi. 10.1134/1.1187041

By:

Gorev, N. B.;
Makarova, T. V.;
Prokhorov, E. F.;
Ukolov, A. T.;
Éppel’, V. I.

Publication type:

Article

Quasiballistic model of current transport and formation of the S-type current–voltage characteristic in the lightly doped, double-barrier heterostructure Al[sub x]Ga[sub 1-x]As–GaAs–AlAs.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 81, doi. 10.1134/1.1187042

By:

Belyantsev, A. M.;
Romanova, Yu. Yu.

Publication type:

Article

Thermal stability of vertically coupled InAs–GaAs quantum dot arrays.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 84, doi. 10.1134/1.1187043

By:

Zhukov, A. E.;
Egorov, A. Yu.;
Kovsh, A. R.;
Ustinov, V. M.;
Maksimov,, M. V.;
Tsatsul’nikov, A. F.;
Ledentsov, N. N.;
Gordeev, N. Yu.;
Zaıtsev, S. V.;
Kop’ev, P. S.;
Alferov, Zh. I.;
Bimberg, D.

Publication type:

Article

Modulation of a quantum well potential by a quantum-dot array.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 88, doi. 10.1134/1.1187055

By:

Tsatsul’nikov, A. F.;
Egorov, A. Yu.;
Zhukov, A. E.;
Kovsh, A. R.;
Ustinov,, V. M.;
Ledentsov, N. N.;
Maksimov, M. V.;
Sakharov, A. V.;
Suvorova, A. A.;
Kop’ev, P. S.;
Alferov, Zh. I.;
Bimberg, D.

Publication type:

Article

Electrical properties of ZnSe/GaAs (100) heterostructures grown by photostimulated vapor-phase epitaxy.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 8, doi. 10.1134/1.1187037

By:

Kovalenko, A. V.

Publication type:

Article

Cathodoluminescence of p–n–p microstructures in CuInSe[sub 2] crystals.

Published in:

Semiconductors, 1997, v. 31, n. 1, p. 92, doi. 10.1134/1.1187056

By:

Konnikov, S. G.;
Medvedkin, G. A.;
Sobolev, M. M.;
Solov’ev, S. A.

Publication type:

Article