Works matching IS 10637826 AND DT 2000 AND VI 34 AND IP 8

Results: 24

Nonlinear Optical Absorption in a Heavily Doped Degenerate n-GaAs.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 924, doi. 10.1134/1.1188101

By:

Malevich, V. L.;
Utkin, I. A.

Publication type:

Article

Ionization Energy of Copper in Hg[sub 0.8]Cd[sub 0.2]Te Crystals under Conditions of Light and Intermediate Doping.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 916, doi. 10.1134/1.1188100

By:

Bogoboyashchiı, V. V.

Publication type:

Article

Hole Concentration and Thermoelectric Figure of Merit for Pb[sub 1 – ][sub x]Sn[sub x]Te:Te Solid Solutions.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 897, doi. 10.1134/1.1188097

By:

Alekseeva, G. T.;
Vedernikov, M. V.;
Gurieva, E. A.;
Prokof’eva, L. V.;
Ravich, Yu. I.

Publication type:

Article

Thermodynamic and Kinetic Aspects of Reconstruction Transitions at the GaAs(001) Surface.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 939, doi. 10.1134/1.1188105

By:

Galitsyn, Yu. G.;
Mansurov, V. G.;
Moshchenko, S. P.;
Toropov, A. I.

Publication type:

Article

Electron–Ion Exchange at the Insulator–Semiconductor Interfaces and Its Influence on Ion Transport in the Insulating Layer.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 945, doi. 10.1134/1.1188106

By:

Gol’dman, E. I.

Publication type:

Article

Radiation Defects in n-6H-SiC Irradiated with 8 MeV Protons.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 861, doi. 10.1134/1.1188089

By:

Lebedev, A. A.;
Veınger, A. I.;
Davydov, D. V.;
Kozlovskiı, V. V.;
Savkina, N. S.;
Strel’chuk, A. M.

Publication type:

Article

TEM Structural Studies of Undoped and Si-doped GaN Grown on Al[sub 2]O[sub 3] Substrate.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 867, doi. 10.1134/1.1188090

By:

Cherkashin, N. A.;
Bert, N. A.;
Musikhin, Yu. G.;
Novikov, S. V.;
Cheng, T. S.;
Foxon, C. T.

Publication type:

Article

Properties of Precisely Compensated Semiconductors.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 872, doi. 10.1134/1.1188091

By:

Karazhanov, S. Zh.

Publication type:

Article

Electrical Properties of Semiconductors with Pair Defects.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 880, doi. 10.1134/1.1188092

By:

Karazhanov, S. Zh.;
Kanaki, É. V.

Publication type:

Article

Transition of a Noncavity Bistable Exciton System Driven by Correlated External Noise to a Strongly Absorbing State.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 886, doi. 10.1134/1.1188093

By:

Gudyma, Yu. V.

Publication type:

Article

Variable-Range-Hopping Conduction via Indium Impurity States in Pb[sub 0.78]Sn[sub 0.22]Te Solid Solution.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 889, doi. 10.1134/1.1188094

By:

Nemov, S. A.;
Gasumyants, V. É.;
Proshin, V. I.;
Ravich, Yu. V.;
Potapova, D. A.

Publication type:

Article

Spectral Shift of Photoluminescence Bands of the (SiC)[sub 1 – ][sub x](AlN)[sub x] Epitaxial Films due to Laser Annealing.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 891, doi. 10.1134/1.1188095

By:

Safaraliev, G. K.;
Émirov, Yu. N.;
Kurbanov, M. K.;
Bilalov, B. A.

Publication type:

Article

Gallium-induced Deep Level in Pb[sub 1 – ][sub x]Ge[sub x]Te Alloys.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 894, doi. 10.1134/1.1188096

By:

Skipetrov, E. P.;
Zvereva, E. A.;
Belousov, V. V.;
Skipetrova, L. A.;
Slyn’ko, E. I.

Publication type:

Article

Properties of Diode Heterostructures Based on Nanocrystalline n-SnO[sub 2] on p-Si under the Conditions of Gas Adsorption.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 955

By:

Vasil’ev, R. B.;
Gas’kov, A. M.;
Rumyantseva, M. N.;
Ryzhikov, A. S.;
Ryabova, L. I.;
Akimov, B. A.

Publication type:

Article

Fine Structure of the Dielectric-Function Spectrum in Diamond.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 902, doi. 10.1134/1.1188098

By:

Sobolev, V. V.;
Timonov, A. P.;
Sobolev, V. Val.

Publication type:

Article

Mutual Electron–Phonon Drag and Low-Temperature Anomalies of Thermoelectric and Thermomagnetic Effects in HgSe:Fe Crystals.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 908, doi. 10.1134/1.1188099

By:

Kuleev, I. G.;
Arapova, I. Yu.

Publication type:

Article

Tunnel Light-Emitting Si:(Er,O) Diodes with a Short Rise Time of Er[sup 3+] Electroluminescence under Breakdown Conditions.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 927, doi. 10.1134/1.1188102

By:

Emel’yanov, A. M.;
Sobolev, N. A.;
Trishenkov, M. A.;
Khakuashev, P. E.

Publication type:

Article

Distribution of Mobile Ions in Thin Insulator Films at the Insulator–Semiconductor Interface.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 931, doi. 10.1134/1.1188103

By:

Dmitriev, S. G.;
Markin, Yu. V.

Publication type:

Article

The Dislocation Nature of a Tunneling Excess Current in GaAs–Ni Structures Modified by Laser Radiation.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 937, doi. 10.1134/1.1188104

By:

Dzhamanbalin, K. K.;
Dmitriev, A. G.

Publication type:

Article

Band Offsets in Zn[sub 1 – ][sub x]Cd[sub x]Te/ZnTe Single-Quantum-Well Structures Grown by Molecular-Beam Epitaxy on GaAs(001) Substrates.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 960, doi. 10.1134/1.1188108

By:

Kozlovskiı, V. I.;
Litvinov, V. G.;
Sadof’ev, Yu. G.

Publication type:

Article

The Influence of Irradiation and Subsequent Annealing on Si Nanocrystals Formed in SiO[sub 2] Layers.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 965, doi. 10.1134/1.1188109

By:

Kachurin, G. A.;
Yanovskaya, S. G.;
Ruault, M.-O.;
Gutakovskiı, A. K.;
Zhuravlev, K. S.;
Kaitasov, O.;
Bernas, H.

Publication type:

Article

High-Frequency Properties of Avalanche Multiplication of Photocarriers in Structures with Negative Feedback.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 971, doi. 10.1134/1.1188110

By:

Burbaev, T. M.;
Kurbatov, V. A.;
Kurochkin, N. E.;
Kholodnov, V. A.

Publication type:

Article

Parameters of Metal One-Electron Transistors Based on Various Materials.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 975, doi. 10.1134/1.1188111

By:

Abramov, I. I.;
Novik, E. G.

Publication type:

Article

Izmail Arturovich Abroyan.

Published in:

Semiconductors, 2000, v. 34, n. 8, p. 981, doi. 10.1134/1.1188112

By:

Spitsyn, A.

Publication type:

Article