Works matching IS 10637826 AND DT 2001 AND VI 35 AND IP 4
Results: 26
The Effect of Various Types of Shallow Impurities and Their Concentration on Microhardness and Photomechanical Properties of Semiconductors.
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- Semiconductors, 2001, v. 35, n. 4, p. 371, doi. 10.1134/1.1365176
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- Article
Laser Beam Epitaxy of HgCdTe/Si Heterostructures.
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- Semiconductors, 2001, v. 35, n. 4, p. 374, doi. 10.1134/1.1365177
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Emission from Hot Charge Carriers during the Formation of High-Field Autosolitons in Electron–Hole Plasma in n-Ge.
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- Semiconductors, 2001, v. 35, n. 4, p. 377, doi. 10.1134/1.1365178
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An Analysis of the Shape of a Luminescence Band Induced by Transitions of Free Electrons to Carbon Atoms in Semi-Insulating Undoped GaAs Crystals.
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- Semiconductors, 2001, v. 35, n. 4, p. 384, doi. 10.1134/1.1365179
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Relaxation Features of the Dielectric Response of Cd[sub 1 – ][sub x]Zn[sub x]Te Crystals Grown from the Melt.
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- Semiconductors, 2001, v. 35, n. 4, p. 391, doi. 10.1134/1.1365180
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- Article
Semiempirical Model of Carrier Mobility in Silicon Carbide for Analyzing Its Dependence on Temperature and Doping Level.
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- Semiconductors, 2001, v. 35, n. 4, p. 394, doi. 10.1134/1.1365181
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- Article
Dipole Moments of Ligands and Stark Splitting of Levels of Rare-Earth Ions.
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- Semiconductors, 2001, v. 35, n. 4, p. 398, doi. 10.1134/1.1365182
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- Article
Mechanisms of Incorporation of an Antimony Impurity into Cadmium Telluride Crystals.
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- Semiconductors, 2001, v. 35, n. 4, p. 405, doi. 10.1134/1.1365183
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- Article
A Study of the Electrical and Optical Properties of Si Delta-Doped GaAs Layers Grown by MBE on a (111)A GaAs Surface Misoriented toward the [211 ] Direction.
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- Semiconductors, 2001, v. 35, n. 4, p. 409, doi. 10.1134/1.1365184
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- Article
The Use of the Amphoteric Nature of Impurity Silicon Atoms for Obtaining Planar p–n Junctions on GaAs (111)A Substrates by Molecular Beam Epitaxy.
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- Semiconductors, 2001, v. 35, n. 4, p. 415, doi. 10.1134/1.1365185
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Structural, Luminescent, and Transport Properties of Hybrid AlAsSb/InAs/Cd(Mg)Se Heterostructures Grown by Molecular Beam Epitaxy.
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- Semiconductors, 2001, v. 35, n. 4, p. 419
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- Article
Interface States and Capacitance–Voltage Characteristics of n-SnO[sub 2]:Ni/p-Si Heterostructures under Gas-Adsorption Conditions.
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- Semiconductors, 2001, v. 35, n. 4, p. 424
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- Article
The Transition Layer in TiB[sub 2]–GaAs and Au–TiB[sub 2]–GaAs Schottky Contacts.
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- Semiconductors, 2001, v. 35, n. 4, p. 427, doi. 10.1134/1.1365188
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- Article
Hot-Hole Lateral Transport in a Two-Dimensional GaAs/Al[sub 0.3]Ga[sub 0.7]As Structure.
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- Semiconductors, 2001, v. 35, n. 4, p. 433, doi. 10.1134/1.1365189
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Conductance of Quasi-Two-Dimensional Semiconductor Systems with Electrostatic Disorder in the Region of the Percolation Metal–Insulator Transition.
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- Semiconductors, 2001, v. 35, n. 4, p. 436, doi. 10.1134/1.1365190
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Plasma Oscillations in Two-Dimensional Semiconductor Superstructures in the Presence of a High Electric Field.
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- Semiconductors, 2001, v. 35, n. 4, p. 444, doi. 10.1134/1.1365191
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- Article
Magnetic-Field-Induced Transitions between Minibands in GaAs/Al[sub x]Ga[sub 1 – ][sub x]As Superlattices.
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- Semiconductors, 2001, v. 35, n. 4, p. 447, doi. 10.1134/1.1365192
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- Article
The Effect of Pulsed Laser Annealing on the Parameters of Cd[sub x]Hg[sub 1 – ][sub x]Te Photoresistors.
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- Semiconductors, 2001, v. 35, n. 4, p. 451, doi. 10.1134/1.1365193
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Photodiodes for a 1.5–4.8μm Spectral Range Based on Type-II GaSb/InGaAsSb Heterostructures.
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- Semiconductors, 2001, v. 35, n. 4, p. 453, doi. 10.1134/1.1365194
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Photoelectric Characteristics of Infrared Photodetectors with Blocked Hopping Conduction.
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- Semiconductors, 2001, v. 35, n. 4, p. 459, doi. 10.1134/1.1365195
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- Article
Suppression of Current by Light in p-Si–n[sup +]-ZnO–n-ZnO–Pd Diode Structures.
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- Semiconductors, 2001, v. 35, n. 4, p. 464, doi. 10.1134/1.1365196
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A Study of Deep Traps at the SiO[sub 2]/6H-SiC Interface Relying upon the Nonequilibrium Field Effect.
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- Semiconductors, 2001, v. 35, n. 4, p. 468, doi. 10.1134/1.1365197
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Consideration of the “Island” Background Charge in Single-Electron Transistor Simulation.
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- Semiconductors, 2001, v. 35, n. 4, p. 474, doi. 10.1134/1.1365198
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The Effect of Dislocations Formed during Growth on the Structure and Photoluminescence of i–n[sup –]–n–n[sup +]-GaAs Epilayers and on the Related Microwave Transistors Parameters.
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- Semiconductors, 2001, v. 35, n. 4, p. 477, doi. 10.1134/1.1365199
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Radiation Hardness of SiC Ion Detectors under Relativistic Protons.
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- Semiconductors, 2001, v. 35, n. 4, p. 481, doi. 10.1134/1.1365200
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- Article
The Thermal Cross-Interference Effects in the Arrays of Vertical-Cavity Surface-Emitting Lasers.
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- Semiconductors, 2001, v. 35, n. 4, p. 485, doi. 10.1134/1.1365201
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