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Erratum to: Several Articles in JETP Letters.
Published in:
2022
By:
- Sazonova, S. V.;
- Ageev, E. I.;
- Iudin, V. A.;
- Sun, Y.;
- Petrova, E. A.;
- Kustov, P. N.;
- Yaroshenko, V. V.;
- Mikhailova, J. V.;
- Gudovskikh, A. S.;
- Mukhin, I. S.;
- Zuev, D. A.;
- Ryzhkov, M. S.;
- Khudaiberdiev, D. A.;
- Kozlov, D. A.;
- Kvon, Z. D.;
- Mikhailov, N. N.;
- Dvoretsky, S. A.;
- Dolganov, P. V.;
- Dolganov, V. K.;
- Kats, E. I.
Publication type:
Correction Notice
Resonant Hybrid Metal–Dielectric Nanostructures for Local Color Generation.
Published in:
JETP Letters, 2022, v. 115, n. 4, p. 186, doi. 10.1134/S0021364022040014
By:
- Ageev, E. I.;
- Iudin, V. A.;
- Sun, Y.;
- Petrova, E. A.;
- Kustov, P. N.;
- Yaroshenko, V. V.;
- Mikhailova, J. V.;
- Gudovskikh, A. S.;
- Mukhin, I. S.;
- Zuev, D. A.
Publication type:
Article
Characterization of the Manufacturing Processes to Grow Triple-Junction Solar Cells.
Published in:
International Journal of Photoenergy, 2014, p. 1, doi. 10.1155/2014/836284
By:
- Kalyuzhnyy, N. A.;
- Evstropov, V. V.;
- Lantratov, V. M.;
- Mintairov, S. A.;
- Mintairov, M. A.;
- Gudovskikh, A. S.;
- Luque, A.;
- Andreev, V. M.
Publication type:
Article
Study of the Possibility to Increase Annual Electricity Production Using Silicon Solar Cells with a Nanostructured Surface.
Published in:
Semiconductors, 2024, v. 58, n. 4, p. 364, doi. 10.1134/S106378262404016X
By:
- Yarchuk, E. Ya.;
- Vyacheslavova, E. A.;
- Shvarts, M. Z.;
- Gudovskikh, A. S.
Publication type:
Article
Plasma Enhanced Atomic Layer Deposition of InP Layers and Multilayer InP/GaP Structures on Si Substrate.
Published in:
Semiconductors, 2024, v. 58, n. 2, p. 134, doi. 10.1134/S1063782624020076
By:
- Gudovskikh, A. S.;
- Uvarov, A. V.;
- Baranov, A. I.;
- Vyacheslavova, E. A.;
- Maksimova, A. A.;
- Kirilenko, D. A.
Publication type:
Article
Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice.
Published in:
Semiconductors, 2023, v. 57, n. 11, p. 474, doi. 10.1134/S106378262308002X
By:
- Babichev, A. V.;
- Pirogov, E. V.;
- Sobolev, M. S.;
- Denisov, D. V.;
- Fominykh, H. A.;
- Baranov, A. I.;
- Gudovskikh, A. S.;
- Melnichenko, I. A.;
- Yunin, P. A.;
- Nevedomsky, V. N.;
- Tokarev, M. V.;
- Ber, B. Ya.;
- Gladyshev, A. G.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Egorov, A. Yu.
Publication type:
Article
Impact of Silicon Wafer Surface Treatment on the Morphology of GaP Layers Produced by Plasma Enhanced Atomic Layer Deposition.
Published in:
Semiconductors, 2023, v. 57, n. 9, p. 415, doi. 10.1134/S1063782623040176
By:
- Uvarov, A. V.;
- Sharov, V. A.;
- Kudryashov, D. A.;
- Gudovskikh, A. S.
Publication type:
Article
Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1075, doi. 10.1134/S1063782619080207
By:
- Uvarov, A. V.;
- Zelentsov, K. S.;
- Gudovskikh, A. S.
Publication type:
Article
Precision Chemical Etching of GaP(NAs) Epitaxial Layers for the Formation of Monolithic Optoelectronic Devices.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1775, doi. 10.1134/S1063782618130092
By:
- Kudryashov, D. A.;
- Gudovskikh, A. S.;
- Baranov, A. I.
Publication type:
Article
Formation of Cu2O and ZnO Crystal Layers by Magnetron Assisted Sputtering and Their Optical Characterization.
Published in:
Semiconductors, 2018, v. 52, n. 3, p. 383, doi. 10.1134/S1063782618030028
By:
- Agekyan, V. F.;
- Borisov, E. V.;
- Gudovskikh, A. S.;
- Kudryashov, D. A.;
- Monastyrenko, A. O.;
- Serov, A. Yu.;
- Filosofov, N. G.
Publication type:
Article
Analysis of light-induced degradation mechanisms in α-Si:H/μc-Si:H solar photovoltaics.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1252, doi. 10.1134/S1063782613090066
By:
- Emelyanov, V. M.;
- Abramov, A. S.;
- Bobyl, A. V.;
- Verbitsky, V. N.;
- Gudovskikh, A. S.;
- Ershenko, E. M.;
- Kudryashov, S. A.;
- Terukov, E. I.;
- Chosta, O. I.;
- Shvarts, M. Z.
Publication type:
Article
Properties of interfaces in GaInP solar cells.
Published in:
Semiconductors, 2009, v. 43, n. 10, p. 1363, doi. 10.1134/S1063782609100194
By:
- Gudovskikh, A. S.;
- Kalyuzhnyy, N. A.;
- Lantratov, V. M.;
- Mintairov, S. A.;
- Shvarts, M. Z.;
- Andreev, V. M.
Publication type:
Article
Visualization of Isofrequency Contours of Strongly Localized Waveguide Modes in Planar Dielectric Structures.
Published in:
JETP Letters, 2018, v. 107, n. 1, p. 10, doi. 10.1134/S0021364018010083
By:
- Permyakov, D. V.;
- Sinev, I. S.;
- Sychev, S. K.;
- Gudovskikh, A. S.;
- Bogdanov, A. A.;
- Lavrinenko, A. V.;
- Samusev, A. K.
Publication type:
Article
Characterization of an a-Si:H/c-Si Interface by Admittance Spectroscopy.
Published in:
Semiconductors, 2005, v. 39, n. 8, p. 904, doi. 10.1134/1.2010683
By:
- Gudovskikh, A. S.;
- Kleider, J.-P.;
- Terukov, E. I.
Publication type:
Article
TEM Study of the Formation and Modification of Nanocrystalline Si Inclusions in a-Si:H Films.
Published in:
Semiconductors, 2004, v. 38, n. 2, p. 221, doi. 10.1134/1.1648381
By:
- Afanasiev, V. P.;
- Gudovskikh, A. S.;
- Kazak-Kazakevich, A. Z.;
- Sazanov, A. P.;
- Trapeznikova, I. N.;
- Terukov, E. I.
Publication type:
Article
Effect of Thermal Treatment on Structure and Properties of a-Si:H Films Obtained by Cyclic Deposition.
Published in:
Semiconductors, 2002, v. 36, n. 2, p. 230
By:
- Afanas’ev, V. P.;
- Gudovskikh, A. S.;
- Nevedomskiı, V. N.;
- Sazanov, A. P.;
- Sitnikova, A. A.;
- Trapeznikova, I. N.;
- Terukov, E. I.
Publication type:
Article
Electrical and Photoelectric Properties of a-Si:H Layered Films: The Influence of Thermal Annealing.
Published in:
Semiconductors, 2001, v. 35, n. 3, p. 353, doi. 10.1134/1.1356161
By:
- Kurova, I. A.;
- Ormont, N. N.;
- Terukov, E. I.;
- Trapeznikova, I. N.;
- Afanas’ev, V. P.;
- Gudovskikh, A. S.
Publication type:
Article
Structure and Properties of a-Si:H Films Grown by Cyclic Deposition.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 477
By:
- Afanas’ev, V. P.;
- Gudovskikh, A. S.;
- Kon’kov, O. I.;
- Kazanin, M. M.;
- Kougiya, K. V.;
- Sazanov, A. P.;
- Trapeznikova, I. N.;
- Terukov, E. I.
Publication type:
Article
Scaling analysis of field-enhanced bandtail hopping transport in amorphous carbon nitride.
Published in:
Physica Status Solidi (B), 2007, v. 244, n. 6, p. 2081, doi. 10.1002/pssb.200642043
By:
- Godet, C.;
- Kleider, J. P.;
- Gudovskikh, A. S.
Publication type:
Article
Effect of Cryogenic Dry Etching on Minority Charge Carrier Lifetime in Silicon.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 4, p. 1, doi. 10.1002/pssa.201900534
By:
- Kudryashov, Dmitry A.;
- Gudovskikh, Alexander S.;
- Baranov, Artem I.;
- Morozov, Ivan A.;
- Monastyrenko, Anatoly O.
Publication type:
Article
Study of GaP Nucleation Layers Grown on Si by Plasma‐Enhanced Atomic Layer Deposition.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 4, p. 1, doi. 10.1002/pssa.201900532
By:
- Gudovskikh, Alexander S.;
- Uvarov, Alexander. V.;
- Morozov, Ivan A.;
- Bukatin, Anton S.;
- Baranov, Artem I.;
- Kudryashov, Dmitry A.;
- Kalyuzhnyy, Nikolay A.;
- Mintairov, Sergey A.;
- Zubkov, Vasily I.;
- Yakovlev, George E.;
- Kleider, Jean-Paul
Publication type:
Article
Effect of Cryogenic Dry Etching on Minority Charge Carrier Lifetime in Silicon.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. 1, doi. 10.1002/pssa.201900534
By:
- Kudryashov, Dmitry A.;
- Gudovskikh, Alexander S.;
- Baranov, Artem I.;
- Morozov, Ivan A.;
- Monastyrenko, Anatoly O.
Publication type:
Article
Study of GaP Nucleation Layers Grown on Si by Plasma‐Enhanced Atomic Layer Deposition.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. 1, doi. 10.1002/pssa.201900532
By:
- Gudovskikh, Alexander S.;
- Uvarov, Alexander. V.;
- Morozov, Ivan A.;
- Bukatin, Anton S.;
- Baranov, Artem I.;
- Kudryashov, Dmitry A.;
- Kalyuzhnyy, Nikolay A.;
- Mintairov, Sergey A.;
- Zubkov, Vasily I.;
- Yakovlev, George E.;
- Kleider, Jean-Paul
Publication type:
Article
Interface Properties of GaP/Si Heterojunction Fabricated by PE‐ALD.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 10, p. N.PAG, doi. 10.1002/pssa.201800617
By:
- Gudovskikh, Alexander S.;
- Uvarov, Alexander V.;
- Morozov, Ivan A.;
- Baranov, Artem I.;
- Kudryashov, Dmitry A.;
- Zelentsov, Kirill S.;
- Jaffré, Alexandre;
- Le Gall, Sylvain;
- Darga, Arouna;
- Brezard‐Oudot, Aurore;
- Kleider, Jean‐Paul
Publication type:
Article
Influence of PE-ALD of GaP on the Silicon Wafers Quality.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 12, p. n/a, doi. 10.1002/pssa.201700685
By:
- Baranov, Artem I.;
- Gudovskikh, Alexander S.;
- Kudryashov, Dmitriy A.;
- Morozov, Ivan A.;
- Mozharov, Alexey M.;
- Nikitina, Ekaterina V.;
- Zelentsov, Kirill S.;
- Darga, Arouna;
- Le Gall, Sylvain;
- Kleider, Jean‐Paul
Publication type:
Article
Study of InP/GaP Quantum Wells Grown by Vapor Phase Epitaxy.
Published in:
Technical Physics Letters, 2023, v. 49, p. S163, doi. 10.1134/S1063785023900649
By:
- Baranov, A. I.;
- Uvarov, A. V.;
- Maksimova, A. A.;
- Vyacheslavova, E. A.;
- Kalyuzhnyy, N. A.;
- Mintairov, S. A.;
- Salii, R. A.;
- Yakovlev, G. E.;
- Zubkov, V. I.;
- Gudovskikh, A. S.
Publication type:
Article
Study of Schottky Diodes Based on an Array of Silicon Wires Obtained by Cryogenic Dry Etching.
Published in:
Technical Physics Letters, 2022, v. 48, n. 2, p. 23, doi. 10.1134/S106378502202002X
By:
- Baranov, A. I.;
- Kudryashov, D. A.;
- Uvarov, A. V.;
- Morozov, I. A.;
- Shugurov, K. Yu.;
- Maksimova, A. A.;
- Vyacheslavova, E. A.;
- Gudovskikh, A. S.
Publication type:
Article
Admittance Spectroscopy of Solar Cells Based on Selective Contact MoOx/Si Junction.
Published in:
Technical Physics Letters, 2021, v. 47, n. 11, p. 785, doi. 10.1134/S1063785021080162
By:
- Baranov, A. I.;
- Kudryashov, D. A.;
- Uvarov, A. V.;
- Morozov, I. A.;
- Maksimova, A. A.;
- Vyacheslavova, E. A.;
- Gudovskikh, A. S.
Publication type:
Article
Formation of Heterostructures of GaP/Si Photoconverters by the Combined Method of MOVPE and PEALD.
Published in:
Technical Physics Letters, 2021, v. 47, n. 10, p. 730, doi. 10.1134/S1063785021070270
By:
- Uvarov, A. V.;
- Baranov, A. I.;
- Vyacheslavova, E. A.;
- Kalyuzhnyi, N. A.;
- Kudryashov, D. A.;
- Maksimova, A. A.;
- Morozov, I. A.;
- Mintairov, S. A.;
- Salii, R. A.;
- Gudovskikh, A. S.
Publication type:
Article
A Selective BP/Si Contact Formed by Low-Temperature Plasma-Enhanced Atomic Layer Deposition.
Published in:
Technical Physics Letters, 2021, v. 47, n. 1, p. 96, doi. 10.1134/S1063785021010211
By:
- Gudovskikh, A. S.;
- Kudryashov, D. A.;
- Baranov, A. I.;
- Uvarov, A. V.;
- Morozov, I. A.
Publication type:
Article
Using MoOx/p-Si Selective Contact for Evaluation of the Degradation of a Near-Surface Region of Silicon.
Published in:
Technical Physics Letters, 2020, v. 46, n. 12, p. 1245, doi. 10.1134/S1063785020120202
By:
- Kudryashov, D. A.;
- Gudovskikh, A. S.;
- Maksimova, A. A.;
- Baranov, A. I.;
- Uvarov, A. V.;
- Morozov, I. A.
Publication type:
Article
Electrical and optical properties of nanosized films of doped zinc and indium oxides deposited by RF magnetron sputtering at room temperature.
Published in:
Technical Physics Letters, 2015, v. 41, n. 8, p. 804, doi. 10.1134/S1063785015080325
By:
- Sosnin, D.;
- Kudryashov, D.;
- Gudovskikh, S.;
- Zelentsov, K.
Publication type:
Article
Full Silicon Tandem Solar Cells Based on Vertically Aligned Nanostructures.
Published in:
International Journal of Photoenergy, 2022, p. 1, doi. 10.1155/2022/8799060
By:
- Kudryashov, Dmitry A.;
- Morozov, Ivan A.;
- Gudovskikh, Alexander S.
Publication type:
Article

Found: 33

Erratum to: Several Articles in JETP Letters.

Resonant Hybrid Metal–Dielectric Nanostructures for Local Color Generation.

Characterization of the Manufacturing Processes to Grow Triple-Junction Solar Cells.

Study of the Possibility to Increase Annual Electricity Production Using Silicon Solar Cells with a Nanostructured Surface.

Plasma Enhanced Atomic Layer Deposition of InP Layers and Multilayer InP/GaP Structures on Si Substrate.

Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice.

Impact of Silicon Wafer Surface Treatment on the Morphology of GaP Layers Produced by Plasma Enhanced Atomic Layer Deposition.

Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition.

Precision Chemical Etching of GaP(NAs) Epitaxial Layers for the Formation of Monolithic Optoelectronic Devices.

Formation of Cu<sub>2</sub>O and ZnO Crystal Layers by Magnetron Assisted Sputtering and Their Optical Characterization.

Analysis of light-induced degradation mechanisms in α-Si:H/μ<i>c</i>-Si:H solar photovoltaics.

Properties of interfaces in GaInP solar cells.

Visualization of Isofrequency Contours of Strongly Localized Waveguide Modes in Planar Dielectric Structures.

Characterization of an a-Si:H/c-Si Interface by Admittance Spectroscopy.

TEM Study of the Formation and Modification of Nanocrystalline Si Inclusions in a-Si:H Films.

Effect of Thermal Treatment on Structure and Properties of a-Si:H Films Obtained by Cyclic Deposition.

Electrical and Photoelectric Properties of a-Si:H Layered Films: The Influence of Thermal Annealing.

Structure and Properties of a-Si:H Films Grown by Cyclic Deposition.

Scaling analysis of field-enhanced bandtail hopping transport in amorphous carbon nitride.

Effect of Cryogenic Dry Etching on Minority Charge Carrier Lifetime in Silicon.

Study of GaP Nucleation Layers Grown on Si by Plasma‐Enhanced Atomic Layer Deposition.

Effect of Cryogenic Dry Etching on Minority Charge Carrier Lifetime in Silicon.

Study of GaP Nucleation Layers Grown on Si by Plasma‐Enhanced Atomic Layer Deposition.

Interface Properties of GaP/Si Heterojunction Fabricated by PE‐ALD.

Influence of PE-ALD of GaP on the Silicon Wafers Quality.

Study of InP/GaP Quantum Wells Grown by Vapor Phase Epitaxy.

Study of Schottky Diodes Based on an Array of Silicon Wires Obtained by Cryogenic Dry Etching.

Admittance Spectroscopy of Solar Cells Based on Selective Contact MoO<sub>x</sub>/Si Junction.

Formation of Heterostructures of GaP/Si Photoconverters by the Combined Method of MOVPE and PEALD.

A Selective BP/Si Contact Formed by Low-Temperature Plasma-Enhanced Atomic Layer Deposition.

Using MoOx/p-Si Selective Contact for Evaluation of the Degradation of a Near-Surface Region of Silicon.

Electrical and optical properties of nanosized films of doped zinc and indium oxides deposited by RF magnetron sputtering at room temperature.

Full Silicon Tandem Solar Cells Based on Vertically Aligned Nanostructures.