Works matching DE "HETEROJUNCTION bipolar transistors"
Results: 167
Microwave Flexible Electronics Directly Transformed from Foundry‐Produced, Multilayered Monolithic Integrated Circuits.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101350
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- Article
Heterojunction Bipolar Transistor: 2D Material‐Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification (Adv. Electron. Mater. 3/2019).
- Published in:
- 2019
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- Publication type:
- Cover Art
2D Material‐Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification.
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- Advanced Electronic Materials, 2019, v. 5, n. 3, p. N.PAG, doi. 10.1002/aelm.201800745
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- Article
The total-dose-effects of gamma and proton irradiations on high-voltage silicon–germanium heterojunction bipolar transistors.
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- Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena, 2013, v. 168, n. 4, p. 253, doi. 10.1080/10420150.2013.763805
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- Article
Hot Carrier Effects on High Frequency Characteristics of SiGe HBTs.
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- International Journal of Electronics Letters, 2024, v. 12, n. 3, p. 270, doi. 10.1080/21681724.2023.2267207
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- Article
Cap layer effect in DC and RF characteristics of InP based n-p-n metamorphic δ-doped heterojunction bipolar transistor.
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- International Journal of Electronics Letters, 2022, v. 10, n. 3, p. 308, doi. 10.1080/21681724.2021.1941280
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- Article
TRANSIT TIME MODEL ANALYSIS THROUGH THE BASIS IN THE CASE OF DRIFT TRANSISTORS HBT.
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- Journal of Science & Arts, 2022, v. 22, n. 2, p. 507, doi. 10.46939/J.Sci.Arts-22.2-c01
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- Article
TRANSIT TIME STUDY THROUGH THE BASE IN CASE OF DRIFT TRANSISTORS.
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- Journal of Science & Arts, 2019, v. 19, n. 2, p. 499
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- Publication type:
- Article
Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment.
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- Advances in Materials Science & Engineering, 2012, p. 1, doi. 10.1155/2012/654762
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- Article
Azimuthally Integrated HBT Parameters for Charged Pions in Nucleus-Nucleus Interactions versus Collision Energy.
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- Advances in High Energy Physics, 2015, v. 2015, p. 1, doi. 10.1155/2015/790646
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- Article
Au‐TiO<sub>2</sub>‐ZnO sandwich‐structured composite films with enhanced ultraviolet‐light photocatalytic activity.
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- Micro & Nano Letters (Wiley-Blackwell), 2021, v. 16, n. 12, p. 601, doi. 10.1049/mna2.12088
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- Article
SiC/Si heterojunction VDMOS breaking silicon limit by breakdown point transfer technology.
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 1, p. 96, doi. 10.1049/mnl.2017.0444
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- Article
Single Event Effect Analysis of SiGe Low Noise Amplifier.
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- Electronics / Elektronika (1450-5843), 2021, v. 25, n. 2, p. 57, doi. 10.53314/ELS2125057B
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- Article
Editor’s Column.
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- Electronics / Elektronika (1450-5843), 2021, v. 25, n. 2, p. 37, doi. 10.53314/ELS2125037K
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- Publication type:
- Article
An Ultrabroadband Generator of Chaotic Microwave Oscillations with an Additional Nonlinear Circuit.
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- Technical Physics Letters, 2019, v. 45, n. 12, p. 1216, doi. 10.1134/S1063785019120095
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- Article
Charge Transport Orthogonality in All-Polymer Blend Transistors, Diodes, and Solar Cells.
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- Advanced Energy Materials, 2014, v. 4, n. 6, p. n/a, doi. 10.1002/aenm.201301409
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- Article
Enhanced Power Conversion Efficiency of Low Band-Gap Polymer Solar Cells by Insertion of Optimized Binary Processing Additives.
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- Advanced Energy Materials, 2014, v. 4, n. 4, p. n/a, doi. 10.1002/aenm.201300835
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- Publication type:
- Article
EXPERIMENTAL CHARACTERIZATION AND MODELING ANALYSIS ON NPN AIGaN/GaN HBT WITH HIGH IDEALITY FACTOR IN BOTH COLLECTOR AND BASE CURRENT.
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- Surface Review & Letters, 2012, v. 19, n. 4, p. 1250043-1, doi. 10.1142/S0218625X12500436
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- Article
Cryogenic amplification of image-charge detection for readout of quantum states of electrons on liquid helium.
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- Journal of Low Temperature Physics, 2021, v. 202, n. 5/6, p. 456, doi. 10.1007/s10909-020-02552-w
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- Publication type:
- Article
70 GSa/s and 51 GHz bandwidth track-and-hold amplifier in InP DHBT process.
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- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 6, p. 1, doi. 10.1049/el.2013.0271
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- Article
Tailoring Photovoltage Response at SrRuO<sub>3</sub>/SrTiO<sub>3</sub> Heterostructures.
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- Advanced Materials Interfaces, 2016, v. 3, n. 22, p. n/a, doi. 10.1002/admi.201600527
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- Publication type:
- Article
Analytical Study of Substrate Parasitic Effects in Common-Base and Common-Emitter SiGe HBT Amplifiers.
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- Journal of Microwaves, Optoelectronics & Electromagnetic Applications, 2013, v. 12, n. 1, p. 217, doi. 10.1590/s2179-10742013000100017
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- Article
Fabrication and characteristics of double heterojunction bipolar transistor based on p-CuO/n-Si heterojunction.
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- Applied Nanoscience, 2022, v. 12, n. 11, p. 3637, doi. 10.1007/s13204-022-02545-z
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- Article
The Study on Single-Event Effects and Hardening Analysis of Frequency Divider Circuits Based on InP HBT Process.
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- Micromachines, 2024, v. 15, n. 4, p. 527, doi. 10.3390/mi15040527
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- Article
An Accurate Electro-Thermal Coupling Model of a GaAs HBT Device under Floating Heat Source Disturbances.
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- Micromachines, 2023, v. 14, n. 12, p. 2236, doi. 10.3390/mi14122236
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- Article
RF Characterization of GaAs HBT under Load Mismatch with Reverse Wave Injection Technique.
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- Micromachines, 2023, v. 14, n. 11, p. 2058, doi. 10.3390/mi14112058
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- Article
An Aging Small-Signal Model for Degradation Prediction of Microwave Heterojunction Bipolar Transistor S -Parameters Based on Prior Knowledge Neural Network.
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- Micromachines, 2023, v. 14, n. 11, p. 2023, doi. 10.3390/mi14112023
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- Article
Design of Power Amplifiers for BDS-3 Terminal Based on InGaP/GaAs HBT MMIC and LGA Technology.
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- Micromachines, 2023, v. 14, n. 11, p. 1995, doi. 10.3390/mi14111995
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- Article
A 20–44 GHz Wideband LNA Design Using the SiGe Technology for 5G Millimeter-Wave Applications.
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- Micromachines, 2021, v. 12, n. 12, p. 1520, doi. 10.3390/mi12121520
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- Article
Editorial for the Special Issue on "Nanodevices for Microwave and Millimeter Wave Applications".
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- 2020
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- Editorial
Indium Phosphide Semiconductor Technology for Next-Generation Communication Systems: Sustainability and Material Considerations.
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- Sustainability (2071-1050), 2025, v. 17, n. 3, p. 1339, doi. 10.3390/su17031339
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- Article
Multivariate Regression Polynomial: A Versatile and Efficient Method for DC Modeling of Different Transistors (MOSFET, MESFET, HBT, HEMT and G<sup>4</sup>FET).
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- International Journal of High Speed Electronics & Systems, 2018, v. 27, n. 3/4, p. N.PAG, doi. 10.1142/S0129156418400165
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- Article
Analysis of a Direct-Bandgap GeSn-Based MQW Transistor Laser for Mid-Infrared Applications.
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- Journal of Electronic Materials, 2019, v. 48, n. 10, p. 6335, doi. 10.1007/s11664-019-07418-w
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- Publication type:
- Article
Electrical Investigation of Nanostructured FeO/p-Si Heterojunction Diode Fabricated Using the Sol-Gel Technique.
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- Journal of Electronic Materials, 2017, v. 46, n. 11, p. 6502, doi. 10.1007/s11664-017-5684-5
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- Article
Ultrathin SnO<sub>2</sub> Scaffolds for TiO<sub>2</sub>-Based Heterojunction Photoanodes in Dye-Sensitized Solar Cells: Oriented Charge Transport and Improved Light Scattering.
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- Chemistry - A European Journal, 2013, v. 19, n. 28, p. 9366, doi. 10.1002/chem.201300524
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- Article
The Nature of Introduced Phase 1/f Noise in Microwave Oscillators.
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- Journal of Communications Technology & Electronics, 2020, v. 65, n. 1, p. 84, doi. 10.1134/S1064226920010076
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- Article
Experimental Determination, Modeling, and Simulation of Nonlinear Thermal Effects in Bipolar Transistors under Static Conditions: A Critical Review and Update.
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- Energies (19961073), 2022, v. 15, n. 15, p. 5457, doi. 10.3390/en15155457
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- Publication type:
- Article
GERMANIUM GRADIENT OPTIMIZATION FOR HIGH-SPEED SILICON GERMANIUM HETERO-JUNCTION BIPOLAR TRANSISTORS.
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- Annals of the West University of Timisoara, Physics Series, 2019, n. 61, p. 22, doi. 10.2478/awutp-2019-0002
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- Publication type:
- Article
A 38 TO 44GHz SUB-HARMONIC BALANCED HBT MIXER WITH INTEGRATED MINIATURE SPIRAL TYPE MARCHAND BALUN.
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- Progress in Electromagnetics Research, 2013, v. 135, p. 317, doi. 10.2528/pier12110207
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- Publication type:
- Article
FREQUENCY DOMAIN DYNAMIC THERMAL ANALYSIS IN GAAS HBT FOR POWER AMPLIFIER APPLICATIONS.
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- Progress in Electromagnetics Research, 2011, v. 118, p. 71, doi. 10.2528/pier11050301
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- Publication type:
- Article
Fabrication of Si heterojunction solar cells using P-doped Si nanocrystals embedded in SiN<sub>x</sub> films as emitters.
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- Nanoscale Research Letters, 2013, v. 8, n. 1, p. 1, doi. 10.1186/1556-276X-8-457
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- Publication type:
- Article
The DOTFIVE Project.
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- Microwave Journal, 2012, v. 55, n. 1, p. 51
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- Article
European Researchers Drive Semiconductor Technology.
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- Microwave Journal, 2012, v. 55, n. 1, p. 51
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- Article
Charge Photogeneration for a Series of Thiazolo-Thiazole Donor Polymers Blended with the Fullerene Electron Acceptors PCBM and ICBA.
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- Advanced Functional Materials, 2013, v. 23, n. 26, p. 3286, doi. 10.1002/adfm.201203148
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- Article
Electrical Characteristics of Cadmium Sulfide/4-Amino-2-Methyl-Quinoline Heterojunction Structure.
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- Celal Bayar University Journal of Science, 2024, v. 20, n. 1, p. 23, doi. 10.18466/cbayarfbe.1396129
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- Article
TCAD Simulation of an E-Mode Heterojunction Bipolar p-FET with I max > 240 mA/mm.
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- Electronics (2079-9292), 2024, v. 13, n. 23, p. 4752, doi. 10.3390/electronics13234752
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- Article
Investigation of Hydrogen Flux Influence on InGaP Layer and Device Uniformity.
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- Electronics (2079-9292), 2024, v. 13, n. 11, p. 2109, doi. 10.3390/electronics13112109
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- Publication type:
- Article
Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers.
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- Electronics (2079-9292), 2024, v. 13, n. 8, p. 1445, doi. 10.3390/electronics13081445
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- Article
Simulation and Comprehensive Analysis of AlGaN/GaN HBT for High Voltage and High Current.
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- Electronics (2079-9292), 2023, v. 12, n. 17, p. 3590, doi. 10.3390/electronics12173590
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- Article
A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part I: Thermometer-Based Approaches.
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- Electronics (2079-9292), 2023, v. 12, n. 16, p. 3471, doi. 10.3390/electronics12163471
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- Publication type:
- Article