Works matching AU Shepeliavyi, P. E.

Results: 24

Fabrication of Holographic Diffraction Gratings Based on As[sub 2]S[sub 3] Layers.
Published in:
Technical Physics, 2003, v. 48, n. 1, p. 115, doi. 10.1134/1.1538739
By:
- Kostyukevych, S. A.;
- Shepeliavyi, P. E.;
- Romanenko, P. F.;
- Tverdochleb, I. V.
Publication type:
Article
Gradient Light-Absorbing SiO[sub x]/Me Coatings for Display Panels.
Published in:
Technical Physics, 2002, v. 47, n. 6, p. 720, doi. 10.1134/1.1486195
By:
- Indutnyy, I. Z.;
- Shepeliavyi, P. E.;
- Michailovskaya, E. V.;
- Park, C. W.;
- Lee, J. B.;
- Do, Y. R.
Publication type:
Article
Phase separation in SiO x films annealed under enhanced hydrostatic pressure.
Published in:
Physica Status Solidi (B), 2008, v. 245, n. 12, p. 2756, doi. 10.1002/pssb.200844049
By:
- Rudko, G. Yu.;
- Maidanchuk, I. Yu.;
- Indutnyy, I. Z.;
- Misiuk, A.;
- Gule, E. G.;
- Shepeliavyi, P. E.
Publication type:
Article
Luminescent and Raman study of nanostructures formed upon annealing of SiOx:Sm films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 1, p. 68, doi. 10.15407/spqeo26.01.068
By:
- Michailovska, K. V.;
- Indutnyi, I. Z.;
- Shepeliavyi, P. E.;
- Sopinskyy, M. V.;
- Dan’ko, V. A.;
- Yukhymchuk, V. O.
Publication type:
Article
Efficient SERS substrates based on laterally ordered gold nanostructures made using interference lithography.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 2, p. 215, doi. 10.15407/spqeo22.02.215
By:
- Hreshchuk, O. M.;
- Yukhymchuk, V. O.;
- Dzhagan, V. M.;
- Danko, V. A.;
- Min’ko, V. I.;
- Indutnyi, I. Z.;
- Shepeliavyi, P. E.;
- Lytvyn, P. M.;
- Sheregii, E.;
- Prokhorenko, S.;
- Polit, J.;
- Zak, D.;
- Płoch, D.;
- Valakh, M. Ya.
Publication type:
Article
Enhancing sensitivity of SPR sensors by using nanostructured Au chips coated with functional plasma polymer nanofilms.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 3, p. 362, doi. 10.15407/spqeo20.03.362
By:
- Indutnyi, I. Z.;
- Ushenin, Yu. V.;
- Hegemann, D.;
- Vandenbossche, M.;
- Myn'ko, V. I.;
- Shepeliavyi, P. E.;
- Lukaniuk, M. V.;
- Lytvyn, P. M.;
- Khrystosenko, R. V.
Publication type:
Article
Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 438, doi. 10.15407/spqeo18.04.438
By:
- Dan'ko, V. A.;
- Dorozinsky, G. V.;
- Indutnyi, I. Z.;
- Myn'ko, V. I.;
- Ushenin, Yu. V.;
- Shepeliavyi, P. E.;
- Lukaniuk, M. V.;
- Korchovyi, A. A.;
- Khrystosenko, R. V.
Publication type:
Article
Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 324, doi. 10.15407/spqeo18.03.324
By:
- Michailovska, K. V.;
- Indutnyi, I. Z.;
- Kudryavtsev, O. O.;
- Sopinskyy, M. V.;
- Shepeliavyi, P. E.
Publication type:
Article
Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 272, doi. 10.15407/spqeo18.03.272
By:
- Chege, V. I.;
- Lytvyn, V. K.;
- Lopatynskyi, A. M.;
- Shepeliavyi, P. E.;
- Lytvyn, O. S.;
- Goltvyanskyi, Yu. V.
Publication type:
Article
High-speed optical recording in vitreous chalcogenide thin films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 389
By:
- Kryuchyn, A. A.;
- Petrov, V. V.;
- Rubish, V. M.;
- Lapchuk, A. S.;
- Kostyukevych, S. O.;
- Shepeliavyi, P. E.;
- Kostyukevych, K. V.
Publication type:
Article
Nickel-induced enhancement of photoluminescence in nc-Si-SiOx nanostructures.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 336
By:
- Michailovska, K. V.;
- Indutnyi, I. Z.;
- Shepeliavyi, P. E.;
- Dan'ko, V. A.
Publication type:
Article
Photostimulated etching of germanium chalcogenide films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 4, p. 345
By:
- Dan'ko, V. A.;
- Indutnyi, I. Z.;
- Myn'ko, V. I.;
- Shepeliavyi, P. E.;
- Lukyanyuk, M. V.;
- Litvin, O. S.
Publication type:
Article
Polarization conversion effect in obliquely deposited SiOx films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 3, p. 273
By:
- Sopinskyy, M. V.;
- Indutnyi, I. Z.;
- Michailovska, K. V.;
- Shepeliavyi, P. E.;
- Tkach, V. M.
Publication type:
Article
Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 1, p. 127
By:
- Lisovskyy, I. P.;
- Litovchenko, V. G.;
- Zlobin, S. O.;
- Voitovych, M. V.;
- Khatsevich, I. M.;
- Indutnyy, I. Z.;
- Shepeliavyi, P. E.;
- Kolomys, O. F.
Publication type:
Article
Controlling the photoluminescence spectra of porous nc-Si-SiOx structures by vapor treatment.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 4, p. 413, doi. 10.15407/spqeo13.04.413
By:
- Dan'ko, V. A.;
- Bratus', V. Ya.;
- Indutnyi, I. Z.;
- Lisovskyy, I. P.;
- Zlobin, S. O.;
- Michailovska, K. V.;
- Shepeliavyi, P. E.
Publication type:
Article
Effect of acetone vapor treatment on photoluminescence of porous nc-Si-SiOx nanostructures.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 2, p. 105
By:
- Indutnyi, I. Z.;
- Michailovska, K. V.;
- Min'ko, V. I.;
- Shepeliavyi, P. E.
Publication type:
Article
Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 1, p. 40, doi. 10.15407/spqeo10.01.040
By:
- Min'ko, V. I.;
- Shepeliavyi, P. E.;
- Indutnyy, I. Z.;
- Litvin, O. S.
Publication type:
Article
Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 9, doi. 10.15407/spqeo9.01.009
By:
- Indutnyy, I. Z.;
- Lysenko, V. S.;
- Maidanchuk, I. Yu.;
- Min’ko, V. I.;
- Nazarov, A. N.;
- Tkachenko, A. S.;
- Shepeliavyi, P. E.;
- Dan’ko, V. A.
Publication type:
Article
Recording the high efficient diffraction gratings by using He-Cd laser.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 4, p. 446
By:
- Kostyukevych, S. A.;
- Morozovska, A. N.;
- Minko, V. I.;
- Shepeliavyi, P. E.;
- Kudryavtsev, A.A.;
- Rubish, V. M.;
- Rubish, V. V.;
- Tverdokhleb, I. V.;
- Kostiukevych, A. S.;
- Dyrda, S. V.
Publication type:
Article
Paramagnetic defects related to photoluminescence in SiOx films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 4, p. 400
By:
- Rudko, G. Yu.;
- Vorona, I. P.;
- Indutnyy, I. Z.;
- Ishchenko, S. S.;
- Shepeliavyi, P. E.;
- Yukhymchuk, V. O.
Publication type:
Article
Optical recording of information pits in thin layers of chalcogenide semiconductors.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 1, p. 93
By:
- Morozovska, A. N.;
- Kostyukevych, S. A.;
- Nikitenko, L. L.;
- Kryuchin, A. A.;
- Kudryavtsev, A. A.;
- Shepeliavyi, P. E.;
- Moskalenko, N. L.
Publication type:
Article
Recording of high efficiency diffraction gratings by He-Ne laser.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 1, p. 88
By:
- Minko, V. I.;
- Shepeliavyi, P. E.;
- Danko, V. A.;
- Romanenko, P. F.;
- Litvin, O. S.;
- Indutnyy, I. Z.
Publication type:
Article
Visible photoluminescence of selectively etched porous nc-Si-Siox structures.
Published in:
Semiconductors, 2010, v. 44, n. 2, p. 206, doi. 10.1134/S1063782610020120
By:
- Indutnyi, I. Z.;
- Michailovska, E. V.;
- Shepeliavyi, P. E.;
- Dan'ko, V. A.
Publication type:
Article
Structural Transformations and Silicon Nanocrystallite Formation in SiO[sub x] Films.
Published in:
Semiconductors, 2001, v. 35, n. 7, p. 821
By:
- Bratus’, V. Ya.;
- Yukhimchuk, V. A.;
- Berezhinsky, L. I.;
- Valakh, M. Ya.;
- Vorona, I. P.;
- Indutnyi, I. Z.;
- Petrenko, T. T.;
- Shepeliavyı, P. E.;
- Yanchuk, I. B.
Publication type:
Article

Works matching AU Shepeliavyi, P. E.

Fabrication of Holographic Diffraction Gratings Based on As[sub 2]S[sub 3] Layers.

Gradient Light-Absorbing SiO[sub x]/Me Coatings for Display Panels.

Phase separation in SiO <sub>x</sub> films annealed under enhanced hydrostatic pressure.

Luminescent and Raman study of nanostructures formed upon annealing of SiO<sub>x</sub>:Sm films.

Efficient SERS substrates based on laterally ordered gold nanostructures made using interference lithography.

Enhancing sensitivity of SPR sensors by using nanostructured Au chips coated with functional plasma polymer nanofilms.

Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist.

Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix.

Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device.

High-speed optical recording in vitreous chalcogenide thin films.

Nickel-induced enhancement of photoluminescence in nc-Si-SiO<sub>x</sub> nanostructures.

Photostimulated etching of germanium chalcogenide films.

Polarization conversion effect in obliquely deposited SiO<sub>x</sub> films.

Effect of low-temperature annealing on light-emitting properties of na-Si/SiO<sub>x</sub> porous nanocomposite films.

Controlling the photoluminescence spectra of porous nc-Si-SiO<sub>x</sub> structures by vapor treatment.

Effect of acetone vapor treatment on photoluminescence of porous nc-Si-SiO<sub>x</sub> nanostructures.

Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist.

Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiO<sub>x</sub> films.

Recording the high efficient diffraction gratings by using He-Cd laser.

Paramagnetic defects related to photoluminescence in SiO<sub>x</sub> films.

Optical recording of information pits in thin layers of chalcogenide semiconductors.

Recording of high efficiency diffraction gratings by He-Ne laser.

Visible photoluminescence of selectively etched porous nc-Si-Sio<sub>x</sub> structures.

Structural Transformations and Silicon Nanocrystallite Formation in SiO[sub x] Films.