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Effect of the quality of the iron-ore-bearing raw materials and coke on the performance indices of blast furnaces at the Novolipetsk metallurgical combine.
Published in:
Metallurgist, 2010, v. 54, n. 1/2, p. 3, doi. 10.1007/s11015-010-9247-8
By:
- Kurunov, I. F.;
- Titov, V. N.;
- Emel'yanov, V. L.;
- Loginov, A. M.;
- Basov, V. I.;
- Shcheglov, E. M.;
- Arzamastsev, A. N.
Publication type:
Article
Separation of Phases and Charge States in Relaxor Ferroelectric PbCo1/3Nb2/3O3.
Published in:
Journal of Experimental & Theoretical Physics, 2020, v. 130, n. 3, p. 439, doi. 10.1134/S1063776120030048
By:
- Khannanov, B. Kh.;
- Zalessky, V. G.;
- Golovenchits, E. I.;
- Sanina, V. A.;
- Smirnova, T. A.;
- Shcheglov, M. P.;
- Bokov, V. A.;
- Lushnikov, S. G.
Publication type:
Article
Experiments on two-step heating of a dense plasma in the GOL-3 facility.
Published in:
Journal of Experimental & Theoretical Physics, 1998, v. 86, n. 3, p. 489, doi. 10.1134/1.558494
By:
- Astrelin, V. T.;
- Burdakov, A. V.;
- Koıdan, V. S.;
- Mekler, K. I.;
- Mel’nikov, P. I.;
- Postupaev, V. V.;
- Shcheglov, M. A.
Publication type:
Article
X-ray study of dopant state in highly doped semiconductor single crystals.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 1, p. 62
By:
- Shul'pina, I. L.;
- Kyutt, R. N.;
- Ratnikov, V. V.;
- Prokhorov, I. A.;
- Bezbakh, I. Zh.;
- Shcheglov, M. P.
Publication type:
Article
On the Structural Perfection of Large-Diameter Silicon Carbide Ingots.
Published in:
Inorganic Materials, 2020, v. 56, n. 9, p. 928, doi. 10.1134/S0020168520090034
By:
- Bykov, Yu. O.;
- Lebedev, A. O.;
- Shcheglov, M. P.
Publication type:
Article
Electron-microscopic investigation of a SiC/Si(111) structure obtained by solid phase epitaxy.
Published in:
Technical Physics Letters, 2008, v. 34, n. 11, p. 992, doi. 10.1134/S1063785008110278
By:
- Sorokin, L. M.;
- Veselov, N. V.;
- Shcheglov, M. P.;
- Kalmykov, A. E.;
- Sitnikova, A. A.;
- Feoktistov, N. A.;
- Osipov, A. V.;
- Kukushkin, S. A.
Publication type:
Article
Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer.
Published in:
Technical Physics Letters, 2008, v. 34, n. 6, p. 479, doi. 10.1134/S1063785008060084
By:
- Aksyanov, I. G.;
- Bessolov, V. N.;
- Zhilyaev, Yu. V.;
- Kompan, M. E.;
- Konenkova, E. V.;
- Kukushkin, S. A.;
- Osipov, A. V.;
- Rodin, S. N.;
- Feoktistov, N. A.;
- Sharofidinov, Sh.;
- Shcheglov, M. P.
Publication type:
Article
Studying 3C-SiC epilayers grown on the (0001)C face of 6H-SiC substrates.
Published in:
Technical Physics Letters, 2007, v. 33, n. 6, p. 524, doi. 10.1134/S1063785007060235
By:
- Lebedev, A. A.;
- Zelenin, V. V.;
- Abramov, P. L.;
- Lebedev, S. P.;
- Smirnov, A. N.;
- Sorokin, L. M.;
- Shcheglov, M. P.;
- Yakimova, R.
Publication type:
Article
Chloride vapor-phase epitaxy of gallium nitride on silicon: Structural and luminescent characteristics of epilayers.
Published in:
Technical Physics Letters, 2006, v. 32, n. 8, p. 674, doi. 10.1134/S1063785006080116
By:
- Bessolov, V. N.;
- Botnaryuk, V. M.;
- Zhilyaev, Yu. V.;
- Konenkova, E. V.;
- Poletaev, N. K.;
- Raevskiĭ, S. D.;
- Rodin, S. N.;
- Smirnov, S. L.;
- Sharofidinov, Sh.;
- Shcheglov, M. P.;
- Hee Seok Park;
- Koike, Masayoshi
Publication type:
Article
Heteropolytype Structures with SiC Quantum Dots.
Published in:
Technical Physics Letters, 2005, v. 31, n. 12, p. 997, doi. 10.1134/1.2150879
By:
- Lebedev, A. A.;
- Petrov, V. N.;
- Titkov, A. N.;
- Sorokin, L. M.;
- Tregubova, A. S.;
- Mosina, G. N.;
- Cherenkov, A. E.;
- Shcheglov, M. P.
Publication type:
Article
GaN Films Grown by Vapor-Phase Epitaxy in a Hydride–Chloride System on Si(111) Substrates with AlN Buffer Sublayers.
Published in:
Technical Physics Letters, 2005, v. 31, n. 11, p. 915, doi. 10.1134/1.2136951
By:
- Bessolov, V. N.;
- Davydov, V. Yu.;
- Zhilyaev, Yu. V.;
- Konenkova, E. V.;
- Mosina, G. N.;
- Raevskiǐ, S. D.;
- Rodin, S. N.;
- Sharofidinov, Sh.;
- Shcheglov, M. P.;
- Park, Hee Seok;
- Koike, Masayoshi
Publication type:
Article
Bulk GaN Layers Grown on Oxidized Silicon by Vapor-Phase Epitaxy in a Hydride–Chloride System.
Published in:
Technical Physics Letters, 2005, v. 31, n. 5, p. 367, doi. 10.1134/1.1931770
By:
- Zhilyaev, Yu. V.;
- Raevskii, S. D.;
- Grabko, D. Z.;
- Leu, D. S.;
- Kompan, M. E.;
- Yusupova, Sh. A.;
- Shcheglov, M. P.
Publication type:
Article
Bulk Large-Area GaN Layers.
Published in:
Technical Physics Letters, 2003, v. 29, n. 5, p. 400, doi. 10.1134/1.1579807
By:
- Zhilyaev, Yu. V.;
- Nasonov, A. V.;
- Raevskiı, S. D.;
- Rodin, S. N.;
- Shcheglov, M. P.;
- Yusupova, Sh. A.;
- Davydov, V. Yu.
Publication type:
Article
Real structure of Cd[sub 2]Nb[sub 2]O[sub 7] pyrochlore single crystals.
Published in:
Technical Physics Letters, 1999, v. 25, n. 7, p. 561, doi. 10.1134/1.1262553
By:
- Shul’pina, I. L.;
- Kolpakova, N. N.;
- Shcheglov, M. P.;
- Lebedev, A. O.
Publication type:
Article
Synthesis of Hexagonal AlN and GaN Layers on a Si(100) Substrate by Chloride Vapor-Phase Epitaxy.
Published in:
Technical Physics, 2019, v. 64, n. 4, p. 531, doi. 10.1134/S1063784219040054
By:
- Bessolov, V. N.;
- Gushchina, E. V.;
- Konenkova, E. V.;
- Konenkov, S. D.;
- L'vova, T. V.;
- Panteleev, V. N.;
- Shcheglov, M. P.
Publication type:
Article
X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals.
Published in:
Technical Physics, 2010, v. 55, n. 4, p. 537, doi. 10.1134/S1063784210040183
By:
- Shul'pina, I. L.;
- Kyutt, R. N.;
- Ratnikov, V. V.;
- Prokhorov, I. A.;
- Bezbakh, I. Zh.;
- Shcheglov, M. P.
Publication type:
Article
Visualization of radiation from a high-power terahertz free electron laser with a thermosensitive interferometer.
Published in:
Technical Physics, 2007, v. 52, n. 7, p. 911, doi. 10.1134/S1063784207070134
By:
- Vinokurov, N. A.;
- Knyazev, B. A.;
- Kulipanov, G. N.;
- Matveenko, A. N.;
- Popik, V. M.;
- Cherkassky, V. S.;
- Shcheglov, M. A.
Publication type:
Article
Magnetic focusing of an intense microsecond relativistic electron beam.
Published in:
Laser & Particle Beams, 1985, v. 3, n. 3, p. 259, doi. 10.1017/S0263034600001464
By:
- Chikunov, V. V.;
- Knyazev, B. A.;
- Koidan, V. S.;
- Konyukhov, V. V.;
- Lebedev, S. V.;
- Mekler, K. I.;
- Shcheglov, M. A.;
- Voropajev, S. G.
Publication type:
Article
Properties of Semipolar GaN Grown on a Si(100) Substrate.
Published in:
Semiconductors, 2019, v. 53, n. 7, p. 989, doi. 10.1134/S1063782619070054
By:
- Bessolov, V. N.;
- Konenkova, E. V.;
- Orlova, T. A.;
- Rodin, S. N.;
- Seredova, N. V.;
- Solomnikova, A. V.;
- Shcheglov, M. P.;
- Kibalov, D. S.;
- Smirnov, V. K.
Publication type:
Article
A study of thick 3 C-SiC epitaxial layers grown on 6 H-SiC substrates by sublimation epitaxy in vacuum.
Published in:
Semiconductors, 2007, v. 41, n. 3, p. 263, doi. 10.1134/S1063782607030037
By:
- Lebedev, A. A.;
- Zelenin, V. V.;
- Abramov, P. L.;
- Bogdanova, E. V.;
- Lebedev, S. P.;
- Nel'son, D. K.;
- Razbirin, B. S.;
- Shcheglov, M. P.;
- Tregubova, A. S.;
- Suvajarvi, M.;
- Yakimova, R.
Publication type:
Article
A study of n +-6 H/ n-3 C/ p +-6 H-SiC heterostructures grown by sublimation epitaxy.
Published in:
Semiconductors, 2006, v. 40, n. 12, p. 1398, doi. 10.1134/S1063782606120050
By:
- Lebedev, A. A.;
- Strel’chuk, A. M.;
- Davydov, S. Yu.;
- Cherenkov, A. E.;
- Kuznetsov, A. N.;
- Tregubova, A. S.;
- Sorokin, L. M.;
- Shcheglov, M. P.;
- Sadokhin, A. V.;
- Yoneda, S.;
- Nishino, S.
Publication type:
Article
Effect of Structural Imperfection on the Spectrum of Deep Levels in 6H-SiC.
Published in:
Semiconductors, 2001, v. 35, n. 12, p. 1372, doi. 10.1134/1.1427973
By:
- Lebedev, A. A.;
- Davydov, D. V.;
- Tregubova, A. S.;
- Bogdanova, E. V.;
- Shcheglov, M. P.;
- Pavlenko, M. V.
Publication type:
Article
Structural Defects and Deep-Level Centers in 4H-SiC Epilayers Grown by Sublimational Epitaxy in Vacuum.
Published in:
Semiconductors, 2000, v. 34, n. 10, p. 1133, doi. 10.1134/1.1317570
By:
- Lebedev, A. A.;
- Davydov, D. V.;
- Savkina, N. S.;
- Tregubova, A. S.;
- Shcheglov, M. P.;
- Yakimova, R.;
- Syväjärvi, M.;
- Janzén, E.
Publication type:
Article
Investigation of the heteroexpitaxial structures {p-3C/n-6H}-SiC.
Published in:
Semiconductors, 1997, v. 31, n. 9, p. 926, doi. 10.1134/1.1187154
By:
- Lebedev, A. A.;
- Savkina, N. S.;
- Tregubova, A. S.;
- Shcheglov, M. P.
Publication type:
Article
Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates.
Published in:
Semiconductors, 1997, v. 31, n. 3, p. 232, doi. 10.1134/1.1187112
By:
- Andreev, A. N.;
- Smirnova, N. Yu.;
- Tregubova, A. S.;
- Shcheglov, M. P.;
- Chelnokov, V. E.
Publication type:
Article
Defects and stresses in MBE-grown GaN and AlGaN layers doped by silicon using silane.
Published in:
Crystallography Reports, 2013, v. 58, n. 7, p. 1023, doi. 10.1134/S106377451307016X
By:
- Ratnikov, V.;
- Kyutt, R.;
- Smirnov, A.;
- Davydov, V.;
- Shcheglov, M.;
- Malin, T.;
- Zhuravlev, K.
Publication type:
Article
X-ray diffraction study of short-period AlN/GaN superlattices.
Published in:
Crystallography Reports, 2013, v. 58, n. 7, p. 953, doi. 10.1134/S1063774513070109
By:
- Kyutt, R.;
- Shcheglov, M.;
- Ratnikov, V.;
- Yagovkina, M.;
- Davydov, V.;
- Smirnov, A.;
- Rozhavskaya, M.;
- Zavarin, E.;
- Lundin, V.
Publication type:
Article
Experience of using different grades of trough mixes in blast furnace production at OAO NMLK.
Published in:
Refractories & Industrial Ceramics, 2008, v. 49, n. 5, p. 330, doi. 10.1007/s11148-009-9092-0
By:
- Shulyakov, G. I.;
- Shcheglov, É. M.;
- Lyapin, S. S.;
- Vorogushin, D. N.
Publication type:
Article
Concentration and structural inhomogeneities in highly doped GaSb(Si) single crystals.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2009, v. 3, n. 6, p. 936, doi. 10.1134/S1027451009060160
By:
- Prokhorov, I.;
- Serebryakov, Yu.;
- Bezbakh, I.;
- Zakharov, B.;
- Ratnikov, V.;
- Shcheglov, M.;
- Shul’pina, I.
Publication type:
Article
Synthesis of Thin Single-Crystalline α-Cr2O3 Layers on Sapphire Substrates by Ultrasonic-Assisted Chemical Vapor Deposition.
Published in:
Technical Physics Letters, 2023, v. 49, p. S284, doi. 10.1134/S1063785023010273
By:
- Nikolaev, V. I.;
- Timashov, R. B.;
- Stepanov, A. I.;
- Stepanov, S. I.;
- Chikiryaka, A. V.;
- Shcheglov, M. P.;
- Polyakov, A. Ya.
Publication type:
Article
Vapor-Phase Epitaxy of AlN Layers on AlN/Si(111) Templates Synthesized by Reactive Magnetron Sputtering.
Published in:
Technical Physics Letters, 2020, v. 46, n. 4, p. 382, doi. 10.1134/S1063785020040185
By:
- Bessolov, V. N.;
- Gruzinov, N. D.;
- Kompan, M. E.;
- Konenkova, E. V.;
- Panteleev, V. N.;
- Rodin, S. N.;
- Shcheglov, M. P.
Publication type:
Article
Thick Epitaxial α-Ga2O3:Sn Layers on a Patterned Sapphire Substrate.
Published in:
Technical Physics Letters, 2020, v. 46, n. 3, p. 228, doi. 10.1134/S106378502003013X
By:
- Nikolaev, V. I.;
- Pechnikov, A. I.;
- Guzilova, L. I.;
- Chikiryaka, A. V.;
- Shcheglov, M. P.;
- Nikolaev, V. V.;
- Stepanov, S. I.;
- Vasil'ev, A. A.;
- Shchemerov, I. V.;
- Polyakov, A. Ya.
Publication type:
Article
Epitaxy of GaN(0001) and GaN(101) Layers on Si(100) Substrate.
Published in:
Technical Physics Letters, 2019, v. 45, n. 6, p. 529, doi. 10.1134/S106378501906004X
By:
- Bessolov, V. N.;
- Kompan, M. E.;
- Konenkova, E. V.;
- Panteleev, V. N.;
- Rodin, S. N.;
- Shcheglov, M. P.
Publication type:
Article
Reciprocal-Space Maps of X-Ray Diffraction Intensity Distribution and Their Relation to the Dislocation Structure of Epitaxial Layers.
Published in:
Technical Physics Letters, 2018, v. 44, n. 6, p. 548, doi. 10.1134/S106378501806024X
By:
- Kyutt, R. N.;
- Shcheglov, M. P.
Publication type:
Article
Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate.
Published in:
Technical Physics Letters, 2018, v. 44, n. 6, p. 525, doi. 10.1134/S1063785018060172
By:
- Bessolov, V. N.;
- Konenkova, E. V.;
- Orlova, T. A.;
- Rodin, S. N.;
- Shcheglov, M. P.;
- Kibalov, D. S.;
- Smirnov, V. K.
Publication type:
Article
Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate.
Published in:
Technical Physics Letters, 2018, v. 44, n. 1, p. 81, doi. 10.1134/S106378501801011X
By:
- Bessolov, V. N.;
- Gushchina, E. V.;
- Konenkova, E. V.;
- L'vova, T. V.;
- Panteleev, V. N.;
- Shcheglov, M. P.
Publication type:
Article
Allowing for hysteresis in the calculation of fields in the elements of accelerator magnetic systems.
Published in:
Technical Physics Letters, 2016, v. 42, n. 7, p. 708, doi. 10.1134/S1063785016070130
By:
- Vinokurov, N.;
- Shevchenko, O.;
- Serednyakov, S.;
- Shcheglov, M.;
- Royak, M.;
- Stupakov, I.;
- Kondratyeva, N.
Publication type:
Article
Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer.
Published in:
Technical Physics Letters, 2014, v. 40, n. 5, p. 386, doi. 10.1134/S1063785014050046
By:
- Bessolov, V.;
- Konenkova, E.;
- Kukushkin, S.;
- Myasoedov, A.;
- Osipov, A.;
- Rodin, S.;
- Shcheglov, M.;
- Feoktistov, N.
Publication type:
Article
Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate.
Published in:
Technical Physics Letters, 2013, v. 39, n. 3, p. 274, doi. 10.1134/S106378501303019X
By:
- Bessolov, V.;
- Konenkova, E.;
- Kukushkin, S.;
- Nikolaev, V.;
- Osipov, A.;
- Sharofidinov, Sh.;
- Shcheglov, M.
Publication type:
Article
GaAs p- i- n structures for X-ray detectors grown on Ge and GaAs substrates.
Published in:
Technical Physics Letters, 2012, v. 38, n. 5, p. 399, doi. 10.1134/S1063785012050161
By:
- Zhilyaev, Yu.;
- Mikulik, D.;
- Nasonov, A.;
- Orlova, T.;
- Panteleev, V.;
- Poletaev, N.;
- Fedorov, L.;
- Shcheglov, M.
Publication type:
Article
Epitaxy of gallium nitride in semi-polar direction on silicon.
Published in:
Technical Physics Letters, 2012, v. 38, n. 1, p. 9, doi. 10.1134/S1063785012010051
By:
- Bessolov, V.;
- Zhilyaev, Yu.;
- Konenkova, E.;
- Poletaev, N.;
- Sharofidinov, Sh.;
- Shcheglov, M.
Publication type:
Article
Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology.
Published in:
Technical Physics Letters, 2010, v. 36, n. 6, p. 496, doi. 10.1134/S1063785010060039
By:
- Bessolov, V. N.;
- Zhilyaev, Yu. V.;
- Konenkova, E. V.;
- Sorokin, L. M.;
- Feoktistov, N. A.;
- Sharofidinov, Sh.;
- Shcheglov, M. P.;
- Kukushkin, S. A.;
- Mets, L. I.;
- Osipov, A. V.
Publication type:
Article

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